1X106 Search Results

Contextual Info: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

Contextual Info: U ltra S table OCXOs Series 5000 FEATURES • Low aging rate day year to 1 X10,n to 1x106 • Excellent temperature ± 3 x 1 0 3 stability 0 to 60°C • Frequency range 4 to 20 MHz - m — Iranlie/ 1/ -I 4— ^ Pin out 50 A Note: Dimensions in mm SPECIFICATIONS

Contextual Info: Honeywell Military & Space Products HX6656 32K x 8 ROM—SOI FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Silicon on Insulator SOI 0.75 nm Process (Leff = 0.6 |iim) • Read Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106ra d(S i02)

Contextual Info: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

HR2340

Abstract: sram pull down honeywell memory sram
Contextual Info: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec

Contextual Info: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as

5962-95845

Abstract: HX6356
Contextual Info: Honeywell Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)

transistor m285

Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

hx6228

Abstract: MIL-PRF38535
Contextual Info: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)

238A792

Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

HXNV0100

Contextual Info: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109

Contextual Info: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)

Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

S4 46

Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

CQFj 44

Abstract: CQFJ 68 lead CQFJ
Contextual Info: WS128K32-25G2SMX 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • Access Time of 25ns ■ Radiation Tolerant • Total Dose Hardness through 1x106 rad SiO2 ■ Neutron Hardness through 1x1014 cm-2 ■ Dynamic and Static Transient Upset Hardness through

HX6256

Abstract: D-10
Contextual Info: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)

HLX*8

Abstract: HLX6228
Contextual Info: Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Low Power Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si)

HX6356

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 nm Process (Le)= 0.6 urn) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiOs)

HX2160

Contextual Info: Honeywell HX2000 RICMOS" — SOI GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm R IC M O S IV SOI Process • Total Dose Hardness of >1x106 rad S i02 • Array Sizes from 10K to 336K Available Gates (Raw) Dose Rate Upset Hardness: >1x10'°rad(Si)/sec (5V)

smd transistor NJ

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM— SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106 rad(S i02)

Contextual Info: G M/HITE /MICROELECTRONICS 2 WS128K32-25XMRH 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A cce ss Tim e of 25ns R adiation T o le ra n t ■ Organized as 128Kx32; User C onfig u rab le as 2 56K x16 or 5 1 2Kx8 • T o t a l Dose Hardness th ro u g h 1x106 rad Si02