4551A72 Search Results

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: Honeywell HTMOS High Temperature Products A d v an ce Information HIGH TEMPERATURE juP COMPATIBLE 12-BIT A/D CONVERTER HT574 FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Includes On-Chip Clock, Reference, • Avionics

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)

Contextual Info: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Transistors smd A7H

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 (j.m Low Power Process (Leff= 0.5 (¿m) • Read/Write Cycle Times < 25 ns (-55 to 125°C)

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI I HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |im Process (Leff= 0.6 |im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C)

Contextual Info: Honeywell Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Leff= 0.6 ^m) • Fast Read/Write Cycle Times < 15 ns (Typical) < 2 5 ns (-55 to 125°C)

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)

NSL 32 equivalent

Abstract: AVW smd AVW smd transistor
Contextual Info: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 |im)

honeywell TS2

Contextual Info: Honeywell HTMOS High Temperature Products HIGH TEMPERATURE QUAD OPERATIONAL AMPLIFIER HT1104 FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Single or Split Supply Operation • Turbine Engine Control • Common-Mode Input Voltage Range