HX6156 Search Results

900-197

Abstract: SMD transistor Marking 1x smd marking WMM
Contextual Info: Honeywell Aerospace Electronics A d van ce Inform ation 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j,m Process (Lefl = 0.6 |im) • Fast Read/Write Cycle Times < 15 ns (Typical)

900-197

Contextual Info: Honeywell Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Fast Read/Write Cycle Times < 15 ns (Typical) < 2 5 ns (-55 to 125°C)

Contextual Info: Honeywell Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Leff= 0.6 ^m) • Fast Read/Write Cycle Times < 15 ns (Typical) < 2 5 ns (-55 to 125°C)

smd diode marking JCt

Abstract: HX6156 smd transistor marking A14
Contextual Info: Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Fast Read/Write Cycle Times ≤ 15 ns (Typical) ≤ 25 ns (-55 to 125°C)

900-197

Abstract: smd diode marking JCt HX6156
Contextual Info: Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Fast Read/Write Cycle Times ≤ 15 ns (Typical) ≤ 25 ns (-55 to 125°C)