1X1014 Search Results

transistor m285

Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

238A792

Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

190A325

Abstract: C710 D 5962h96877
Contextual Info: 190A325 198A592 128K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Contextual Info: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)

S4 46

Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 225A833
Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 5 V 225A833 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

HX84050

Contextual Info: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2

CQFj 44

Abstract: CQFJ 68 lead CQFJ
Contextual Info: WS128K32-25G2SMX 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • Access Time of 25ns ■ Radiation Tolerant • Total Dose Hardness through 1x106 rad SiO2 ■ Neutron Hardness through 1x1014 cm-2 ■ Dynamic and Static Transient Upset Hardness through

A1760

Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
Contextual Info: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

RAD HARD TRENCH TRANSISTOR

Contextual Info: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 FEATURES RADIATION • Fabricated with R IC M O S1“ Silicon on Insulator SOI 1.2 (im process • Total Dose Hardness through 1x10 e rad (S i0 2) • Neutron Hardness through 1x1014 cm 2 OTHER

Contextual Info: Honeywell A dvance Information HC83240 128K X 32 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Automatic "Fly-By" Error Detect and Correct EDC for any single and double bit errors • Neutron Hardness through 1x1014 crrr2

Contextual Info: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)

BAE Systems

Abstract: AEFJANTXV1N4100-1-BAE/TR/BAE 209A542 transistor B885 LM136A-2.5QML
Contextual Info: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

transistor B885

Abstract: 201A072 225A837 B885
Contextual Info: 201A072 225A837 256K x 8 Radiation Hardened Static RAM MCM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

203A665

Abstract: J122 SMD TRANSISTOR 314 j122
Contextual Info: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Contextual Info: Honeywell Advance Information 256K x 16 RADIATION-TOLERANT SRAM HC81640 FEATURES R A D IA TIO N OTHER • Total D ose H ardness at Tactical Level • Detects and Corrects All Single and Double Bit Errors Automatically • Neutron H ardness through 1x1014 cm 2

harris 6616

Contextual Info: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2

Contextual Info: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

198A854

Abstract: BAE Systems DQ72
Contextual Info: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

a3050

Abstract: 86-65-3 D0950
Contextual Info: 128K x 72 x 2 Radiation Hardened Static RAM MCM– 3.3 V 198A854 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

transistor m285

Abstract: transistor C013 SMD A137 transistor k450 cm c013 transistor f630
Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Contextual Info: Honeywell SRAMs 2K x 8 RADIATION-HARDENED STATIC RAM HC6216 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1,2nm Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x10 rad S i0 2 • Low Operating Power • Neutron Hardness through 1x1014 cm 2

Contextual Info: Honeywell Preliminary MULTICHIP MODULES HC80805 64K X 8 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness through 1x106 rad Si02 • Spare Memory Chip can be Substituted On-The-Fly • Neutron Hardness through 1x1014 crrv2 • Access Time <60 nsec

transistor B885

Abstract: 209A542 AEFJANTXV1N4100-1-BAE/TR/BAE LM136A-2.5QML
Contextual Info: 128K x 16 Radiation Hardened Static RAM MCM – 3.3 V 209A542 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

Contextual Info: S5E J> m 4 5 5 1 0 7 3 0 0 0 0 0 3 0 4 22 • Honeywell H0N3 - HONEYlüELL/S S E C Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES RADIATION OTHER • Fabricated with RICMOS Silicon on Insulator