1X109 Search Results

Contextual Info: U HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1 . 2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si) - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free

HXNV0100

Contextual Info: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109

HS-26C31

Abstract: HS-26C31RH HS9-26C31RH-8 HS1-26C31RH-Q HS1-26C31RH-8 HS9-26C31RH-Q 26C31 CDFP4-F16 26C31 leakage CERAMIC FLATPACK 16
Contextual Info: HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free • EIA RS-422 Compatible Outputs (Except for IOS)

varistor 102m

Abstract: 270v varistor d 302 RA-362MS-V7 270v varistor RA-102M RA-242M-V7 RA-272M 10mm 270v cd 152m LR105073
Contextual Info: RA-V7 SERIES SURGE ABSORBER @ OKAYA M SÂ<§ A Features File NO. Safety Agency : Standard • Fast response time. • Bi-polar surge absorber, it will fail open if the surge withstand capacity is exceeded. • Small inter-terminal capacitance. • High insulation resistance 1X109h. min .

Contextual Info: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology n 150 nm Process n Total Dose Hardness 1x106 rad (Si) n Dose Rate Upset Hardness 1x109 rad(Si)/s

Contextual Info: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s

Contextual Info: Honeywell RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 M-mLeff RICMOS™ IV Bulk Process • Total Dose Hardness >1x10 rad Si02 • Dose Rate Upset Hardness >1x109rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

6X101

Abstract: P839-08 K1713-03 B1920-01 P819 P2837-01 ir P838 P838 thermistor inas detector inas
Contextual Info: H A MA MAT S U CORP n E D • 425^bQT 000272b T ■ 'AV InAs, InSb Detectors Characteristics F0v=60° ( /P.28\ 29) Effective Sensitive Area Measure­ ment Temp. (mm) fC) IR Cutoff Wave­ length Ac fam) Min. Typ. 3 .2 3 .6 5X108 1X109 3.1 3 .2 3X109 5X109

207K AW

Contextual Info: Honeywell HR2000 RICMOS " GATE ARRAYS FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 nm RICMOS IV Bulk Process Total Dose Hardness of >1x106 rad S i02 Dose Rate Upset Hardnes >1x109 rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

cdte

Abstract: Laser photodetectors photoconductor pci-l-2te-1
Contextual Info: PCI-L-2TE Series IR Laser Photoconductors Fast, Sensitive 2-12µm CO2 Laser Detectors Photoconductors Room Temperature, Optically Immersed FEATURES • D* 10.6 µm > 1x109 cmHz1/2/W • 10 nanosecond response time • Wide dynamic range • Compact, rugged, and reliable

iec60384-14

Abstract: surge protector Okaya RAM-302LAS Okaya Surge Protector RAM-362LAS E47474 LR105073 302LAS UL1449 25ot
Contextual Info: Û SURGE PROTECTOR R • A • M-LAS series @ OKAYA M Features 9• à <V Ê it*Alaywuai • Fast response time. • Bi-polar and it will fail open if surge withstand capability is exceeded. • Small inter-terminal capacitance. • High indulation resistance 1X109£2 min .

Contextual Info: HMXMUX01 8-Channel Analog Multiplexer Radiation Hardened Features ▪ Fabricated on Silicon On Insulator SOI CMOS Technology ▪ SOI4 Process (Leff = 0.8 um) ▪ Total Dose Hardness 300k rad (Si) ▪ Dose Rate Upset Hardness 1x109 rad(Si)/s ▪ Dose Rate Survivability

HXNV0100

Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram
Contextual Info: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109

r60 mkt

Abstract: 3330-6-R60IF r60 mkt 400 A r60 mkt 400 22 CAPACITOR R60II R60PF r60er5100 1470 LM R60PR4150 capacitor polyester mkt 400v
Contextual Info: Loose R60 MKT Series Taped METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS Fig. 2 Fig.1 Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.: AUTOMOTIVE . PRODUCT CODE: R60

fiber optic schematic symbols

Contextual Info: Inexpensive 20 to 160 MBd Fiber Optic Solutions for Industrial, Medical, Telecom, and Proprietary Data Communication Applications Application Note 1123 Introduction Low cost, fiber optic, data communications links have been used in place of copper wire in ­numerous industrial, medical and proprietary applications. The fiber optic

HX6408

Contextual Info: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)

Contextual Info: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power

Contextual Info: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly

Contextual Info: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process

Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

MK1573-02

Contextual Info: ICROCLOCK GenClock MK1573-02 HSYNC to Video Clock Description Features The MK1573 GenClock™ provides genlock timing for video overlay systems. The device accepts the horizontal sync HSYNC signal as the input reference clock, and generates a frequencylocked high speed output. Stored in the device are