HX6408
Contextual Info: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)
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OCR Scan
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hx64085x105rad1x1091x101+340-leadd28883q172s
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1A15
Abstract: honeywell hr 20 HLX6408
Contextual Info: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)
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OCR Scan
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5x105rad1x101hlx64081x109+340-lead1a15honeywell hr 20
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900198
Abstract: HX6408 si02 1a15
Contextual Info: Honeywel Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |a,m Process (Leff = 0.4 |a,m) • Read/Write Cycle Times < 2 5 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(S i02)
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OCR Scan
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5x105rad1x1091x10140-lead+4hx6408900198si021a15
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NSL 32 equivalent
Abstract: AVW smd AVW smd transistor
Contextual Info: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 |im)
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36-leadhx64085x105rad1x101+3nsl 32 equivalentavw smdavw smd transistor
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