SI02 Search Results

HX6408

Contextual Info: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)

Contextual Info: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power

Contextual Info: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly

Contextual Info: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

Contextual Info: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

LS900-SI-02-AXX

Abstract: avrisp WinAVR bpsk modulation AT86RF212 PCB ATXMEGA256A3
Contextual Info: SiFLEX02 TRANSCEIVER MODULE LS900-SI-02-AXX DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available: LSDEV-SI02-A30 FEATURES DESCRIPTION • 250mW output power  Long range: 2 miles  Up to 1Mbps RF data rate

Contextual Info: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)

Contextual Info: LOGIC DEVICES INC at.E D • S5b5TQS O O O U O b 2 ■ T -9 é ~ 2 3 -a sr 64K x 1 Radiation-Hard Static RAM FEATURES □ 64K x 1 Radiation-Hard Static RAM with Separate I/O , Chip Select Powerdown □ Address Access Time: £ 5 0 n sat8 0 °C □ Total Dose: £10* Rads Si02

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)

Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02

Contextual Info: G M/HITE /MICROELECTRONICS 2 WS128K32-25XMRH 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A cce ss Tim e of 25ns R adiation T o le ra n t ■ Organized as 128Kx32; User C onfig u rab le as 2 56K x16 or 5 1 2Kx8 • T o t a l Dose Hardness th ro u g h 1x106 rad Si02

Contextual Info: Honeywell RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 M-mLeff RICMOS™ IV Bulk Process • Total Dose Hardness >1x10 rad Si02 • Dose Rate Upset Hardness >1x109rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)

Contextual Info: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)

Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP90CM38 4.11 Serial Channel SI02 Timing Chart EXTERNAL CLK - tSCL ' - tsCH SCLK2 I X TXD2 OUTPUT DATA •tSR D ■ ■tH SR • RXD2 (INPUT DATA)" VALID :C INTERNAL tSCY tSCL SCLK2 . tsC H . J .t tSKD O TXD2 (OUTPUT DATA) tSRD

Contextual Info: LOGIC DEVICES INC 2bE d • sstsiQS a o a n m _ 256K x 1 Radiation-Hard Static RAM FEATURES □ 256K x 1 Radiation-Hard Static RAM with Separate I/O , Chip Select Powerdown □ Address Acces9 Time: S SO ns at 80°C □ Total Dose: £106 Rads Si02

xmega 128

Abstract: AVRISP mkII AT86RF212 LS900-SI-02-A50 LSDEV-SI02-A30 XMEGA Application Notes AT86RF212 PCB ATXMEGA256A3 W3112A AVR soldering temperature
Contextual Info: SiFLEX02 TRANSCEIVER MODULE LS900-SI-02-AXX DATASHEET Integrated Transceiver Modules for ZigBee / 802.15.4 900 MHz Development Kit Available: LSDEV-SI02-A30 FEATURES DESCRIPTION • 250mW output power • Long range: 2 miles • Up to 1Mbps RF data rate

S2L00

Contextual Info: 256K x 4 molale V id e o R A M M V M 4 2 5 9 -1 0 /1 2 Issue 2.0 : February 1992 P R E L IM IN A R Y S e m ic o n d u c to r Inc. Pin Definition 262,144 X 4 CMOS Fully Featured Video RAM SC SI01 SI02 DT/OE W1/I01 W 2/I02 WB/WE NC RAS A8 A6 A5 A4 Vcc Features

Contextual Info: Honeywell Military & Space Products 32K x 8 ROM— SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |am Process (Leff = 0.6 |im) • Read Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)

HX6356

Abstract: smd transistor AL2
Contextual Info: Honeywell Aerospace Electronics 32K X 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 pm Process (Leff= 0.6 |iim) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(Si02)

honeywell memory sram

Abstract: 419B3E
Contextual Info: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec

1A15

Abstract: honeywell hr 20 HLX6408
Contextual Info: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)