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    4SS1A72 Search Results

    4SS1A72 Datasheets Context Search

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    L42n

    Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
    Contextual Info: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:


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    dd00212hm3500he12000ecl10k/kh/100k+10148-pinmil-m-38510/600mil-std-883cl42nadb 630l43nalu 4 bitecl ic nandl44npt06-16-8p-s/transistor 03e PDF

    Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


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    hx62281x1061x1014cm1x109rad+41x10132-lead1x106rad2x105 PDF

    HC6264

    Contextual Info: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical


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    hc62641x1011x10936-pin PDF

    Contextual Info: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)


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    hx91001x1011x1012rad1x101/cm2+14ss1a72 PDF

    Contextual Info: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible


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    hm3500rhvm10000rto172148-pin+4244-pinm2010m2023m1008 PDF

    NSL 32 equivalent

    Abstract: AVW smd AVW smd transistor
    Contextual Info: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 |im)


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    36-leadhx64085x105rad1x101+3nsl 32 equivalentavw smdavw smd transistor PDF

    Contextual Info: Honeywell HTMOS High Temperature Products HIGH TEMPERATURE QUAD OPERATIONAL AMPLIFIER HT1104 FEATURES APPLICATIONS • S pecified O ver -55 to +225°C , O perational to +300°C • • Single or Split Supply O peration • T urbine Engine C ontrol • C om m on-M ode Input V oltage Range


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    ht1104100pf PDF