128KX32 Search Results

K7A401800B-QC

Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
Contextual Info: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters

K7A401800B

Abstract: K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC
Contextual Info: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters

AM29F010

Contextual Info: EDI7C32128C 128Kx32 Flash 128Kx32 High Speed Flash Module Features The EDI7C32128C is a high speed, high performance, four megabit density Flash module, organized as 512Kx32 bits, containing four 128Kx8 die mounted in a package. Four Chip Enables are provided to independently enable

Contextual Info: 1ZÖKX3Z SKMMMOdUie ELECTRONIC DESIGNS IN C | 128KX32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static The EDI8G32130C is a high speed 4 megabit Static RAM Random Access Memory module organized as 128K words by 32 bits. This module is • Access Times

Contextual Info: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8

WS128K32XXX

Contextual Info: WS128K32-XXX / EDI8C32128C HI-RELIABILITY PRODUCT 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES • ■ ■ ■ ■ ■ Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging Commercial, Industrial and Military Temperature Ranges

Contextual Info: WSF128K32V-XG2TX 128KX32 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 25ns (SRAM) and 90ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each

7705ac

Abstract: 128KX32 EDI8F32128C jedec 64-pin simm 7705
Contextual Info: EDI8F32128C 128Kx32 SRAM Module 128Kx32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static Random Access Memory • Access Times BiCMOS: 10 and12ns CMOS: 15, 20, 25, 35, 55, 70, 85 and 100ns • Individual Byte Selects • Fully Static, No Clocks

Contextual Info: T T WS128K32-XXX M/HITE /MICROELECTRONICS • Organized as 128Kx32; User Configurable as 25BKx16 or 512Kx8 ■ Commercial, Industrial and M ilitary Temperature Ranges ■ 5 Volt Power Supply 128Kx32 SRAM MODULE FEATURES ■ Access Time 17 and 20nS ■ MIL-STD-883 Compliant Devices Available

Contextual Info: YZÀ 128Kx32 SRAM MODULE PRELIMINARY* • Commercial and Industrial Temperature Ranges ■ TTL Compatible Inputs and C M O S Outputs ■ 5 Volt Pow er Supply FEATURES ■ Access Times of 17nS to 45nS ■ W PS128K32-XPJX 1/VHITE /MICROELECTRONICS Packaging

717G

Contextual Info: WS128K32-XXX WHITE /MICROELECTRONICS a 128Kx32 SRAM M ODULE, SM D 5962-93187 & 5962-95595 FEATURES • A ccess Tim es of 1 5 ,1 7 , 20, 25, 35, 45, 55ns C om m ercial, Industrial and M ilita ry T e m pe ratu re Fianges ■ M IL-S TD -883 C om pliant D evices A v a ila b le

LT 1385

Contextual Info: a WHITE /MICROELECTRONICS 128Kx32 SRAM/FLASH MODULE WSF128K32-XH2X PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 25ns SRAM and 120ns (FLASH) ■ ■ A cce ss Tim es of 25ns (SRAM ) and 90ns (FLASH) ■ Sector A rc h ite c tu re • 8 equal size sectors o f 16K bytes each

Contextual Info: a WPS128K32G-XPJX WHITE /MICROELECTRONICS 128Kx32SRAM MODULE PRELIMINARY* FEATURES • ■ A ccess Tim es of 1 5 ,1 7 , 20, 25, 35ns ■ G2 Pinout fo r Upgrade Path to M ilita r y Grade Device Packaging: ■ 5 V olt Pow er S upply • 68 Lead, P lastic PLCC, 24.71 mm 0.973 inch square

Contextual Info: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM

Contextual Info: K7N403609B K7N403209B K7N401809B 128Kx36/x32 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters

WF128K32-XXX5

Abstract: 5962-9471604HAX
Contextual Info: White Electronic Designs WF128K32-XXX5 128KX32 5V FLASH MODULE, SMD 5962-94716 FEATURES Commercial, Industrial and Military Temperature Ranges Access Times of 50*, 60, 70, 90, 120, 150ns Packaging: • 66 pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP Package 400

Contextual Info: K7B403625B K7B403225B K7B401825B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters

EDI8F32128C

Abstract: Static RAM 128m
Contextual Info: White Electronic Designs EDI8F32128C 128KX32 STATIC RAM CMOS, HIGH SPEED MODULE FEATURES DESCRIPTION 128Kx32 bit CMOS Static Random Access Memory Access Times: 15, 20, and 25ns Individual Byte Selects Fully Static, No Clocks TTL Compatible I/O Single +5V ±10% Supply Operation

GS840NBT32

Contextual Info: Preliminary - A pril 1998 u m o io c v < t\\ 2.5V or 3.3V I/O 143/133/117/100 GS840NBT32PT NO BUS TURNAROUND _ PIPELINE 128Kx32 NBT F eatures Output registers are provided and are controlled by FT m ode pin. With FT mode pin, output registers can be programmed in either

EDI8F32128C

Contextual Info: White Electronic Designs EDI8F32128C 128KX32 STATIC RAM CMOS, HIGH SPEED MODULE FEATURES DESCRIPTION „ 128Kx32 bit CMOS Static „ Random Access Memory The EDI8F32128C is a high speed 4Mb Static RAM module organized as 128K words by 32 bits. This module is

EDI8L32128C

Abstract: EDI8L32128C12AC EDI8L32128C15AC EDI8L32128C15AI EDI8L32128C17AC EDI8L32128C20AC EDI8L32128C25AC EDI8L32256C EDI8L3265C MO-47AE
Contextual Info: EDI8L32128C White Electronic Designs 128Kx32 CMOS High Speed Static RAM DESCRIPTION n The EDI8L32128C is a high speed, high performance, four megabit density Static RAM organized as a 128Kx32 bit array. n T NO FEATURES 128Kx32 bit CMOS Static Random Access Memory Array

Contextual Info: a WF128K32-XXX5 WHITE /MICROELECTRONICS 128Kx32 5V FLASH MODULE, SMD 5962-94716 FEATURES • A c c ess T im e s of 50*, 60, 70, 9 0 , 1 2 0 , 1 50ns ■ C o m m ercia l, In d u s tria l and M ilit a r y T e m p e ra tu re Ranges ■ Packaging: ■ 5 V o lt Pro g ram m ing . 5V ± 1 0 % S u p p ly

Contextual Info: 512Kx32/256Kx16/128Kx32, 150ns, TSOP STACK 30A229-00 A M-Densus High Density Memory Device 4 Megabit High Speed EEPROM DPE128X32Y5 ADVANCED INFORMATION DESCRIPTION: The DPE128X32Y5 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may

Contextual Info: WS128K32-XXX HI-RELIABILITY PRODUCT 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES • Commercial, Industrial and Military Temperature Ranges ■ Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging