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HXNV0100 Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram Contextual Info: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109	Original	hxvn0100 hxnv0100 1x106 1x109 +111x1012 1x10-10 1x1014 1x1015 n61-0995-000-000 tunneling magnetoresistance mram mil-prf38535 s150 department of defense honeywell mram	PDF

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HXNV0100

Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram
Contextual Info: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109

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hxvn0100 hxnv0100 1x106 1x109 +11

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