motor IG 2200 19 00001
Abstract: IRHF7330SE
Contextual Info: PD - 91864 IRHF7330SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , SEE RAD HARD HEXFET 400Volt, 1.2Ω International Rectifier’s SEE RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation
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JANSR2N7463T2
Abstract: IRHF7330SE
Contextual Info: PD-91864B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF IRHF7330SE JANSR2N7463T2 400V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7330SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number
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pd-91864bo-205afirhf7330sejansr2n7463t2+3mil-prf-19500/675mil-std-750mll-std-750
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2N6764 JANTX
Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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irh7054irh7130irh7150irh7230+9irh7250irh7250seirhf7330seirhf7430seirh7450irh7450se2n6764 jantx91447ir2113l
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IRHF7330SE
Abstract: JANSR2N7463T2
Contextual Info: PD - 91864A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF IRHF7330SE JANSR2N7463T2 400V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7330SE Radiation Level 100K Rads (Si) RDS(on) 1.2Ω ID QPL Part Number
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1864ao-205afirhf7330sejansr2n7463t2+3mil-prf-19500/675mil-std-750mll-std-750
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-544-0-1737-2comdb8029cirf460+9smd transistor marking k38smd transistor k38we 751002 ssmd-6ctransistor smd k45rad-hard igbtirf3504afl2805s manufactured by international rectifier550-065
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irf5n5210sc
Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)
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4246airhg567110mo-036abirhg563110+12o-254aa22jgq045scvirf5n5210scirhna57064scsirhm597260irf5n5210irhna597160scsirhf7110scsirhg57110irhna57264sescs35clq045scs12clq150scs
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IRHNA57064SCS
Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5
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94046birhnj597230irhnj593230o-254aa+1322jgq045scv22gq100scv25gq045scsirhna57064scsirhnj597230scsirhnj9130scsirhg6110scsirhy7434irhe57130scs8cljq045scvirhnj57034scsirfy923035clq045scs
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2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators
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2n75502n75492n75452n7476t1+6smd 921122n7546irhnj9130scs2n74712n74262n7468
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2N7464U5
Abstract: 2N7463T2 2N7464T2 2n7463 2N7463U5 MIL-PRF19500 2N7464U IRHE7430SE MIL-PRF-19500/177
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 June 2008. INCH-POUND MIL-PRF-19500/675D 12 March 2008 SUPERSEDING MIL-PRF-19500/675C 8 February 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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2N7464T2
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 June 2012. INCH-POUND MIL-PRF-19500/675E 25 March 2013 SUPERSEDING MIL-PRF-19500/675D 12 March 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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IRHNJ597230SCS
Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
Contextual Info: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5
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4047airhnj597130irhnj593130o-254aa+1322jgq045scv22gq100scv25gq045scsirhnj597230scsinternational rectifier smd30cljq100scsirhnj597034scsirhg6110scsirhnj57234sescsirfe130scx35clq045scsirhnj597130scsirhnj7430sescs
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