M0036 Search Results

2n7425

Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
Contextual Info: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998

vp22

Contextual Info: International Government and Space Products I8R Rectifier Control Integrated Circuits Part Number VS Offset VBS, VCC IOUT Supply Voltage Supply Voltage Sink. Source V (AJ •> (V| Fax on Demand Number High & Low Side Driver LCC I R 2 I I0 E 4 -4 t o 400

IRFG014

Abstract: smd 9410 IRFH450 s 9413 9410 N-channel
Contextual Info: TOR HIGH-REL HEXFETs INTERNATIONAL. RECTIFIER - INTERNA TIO NAL RECTIFIER SbE D ' SSSHSa 00105b? T • TO-61 Isolated Package T - 3°l - 03 N-CHANNEL Types Vd s Iq cant Rd S(ON (max) Tq = 25°C |q m pulsed P0 max Case Style Bulletin V a A A W IRFH150

NM230-F

Abstract: STAEFA damper actuator DANFOSS NM24-SR-F NM24-SR satchwell EEC AEG 89/336/EEC
Contextual Info: B C NM230-F Form-fit damper actuator 8 Nm Dampers up to approx. 1.5 m2 Open/Close actuator AC 230 V Control by single-pole contact (single-wire control) p0024707 Improved functional safety The damper actuator has no limit switches and is overload-proof. It stops automatically when it reaches the damper or

Yamaha Musical Instruments

Abstract: AK4531 ak5326 AK4542 AK4526 Yamaha Musical ICs car stereo speaker extra bass circuit diagram AKD4510 AK4517 altec lansing 8 PIN D SUB
Contextual Info: INDEX AUDIO ADCs AUDIO DACs AUDIO CODECs MULTIMEDIA CODECs USB ICs AES/EBU-S/PDIF Receiver AUDIO CODEC WITH DSP VIDEO PRODUCTS * AK5330 AK4510 AKD4510 AK4516 AKD4516 AK4518 AKD4518 AK4519 AKD4519 Not available in U.S.A and Europe AUDIO ADCs * AK5330 18bit, 90dB DR, 84dB S/ N+D

"Ferroelectric RAM"

Abstract: FeRAM Ferroelectric RAM MN63Y1005 ferroelectric M00364BE NRZL block diagram
Contextual Info: New FeRAM Embedded IC MN63Y1005 for Contactless IC card and Tag • Overview MN63Y1005 is a nonvolatile ferroelectric random access memory FeRAM embedded IC for contactless IC card and tag. The IC is powered by radio waves from a read/write unit and for

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

Contextual Info: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17

Contextual Info: Government and Space Products International IQ R Rectifier •d Pa rt Num ber b vdss R DS on (V) (£ 1 T f= 2 S °C (A) Pd @ Tr= 2 5 °C T f= 10 0 °C (A ) (W ) Fax on Dem and Num ber Case O u t lin e Key Herm etic Packages HEXFET Power MOSFETs LCC IRf-'E9220

HEXFETs FETs

Abstract: h184
Contextual Info: D a ta INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7HO N-CHANNEL RAD HARD 100 Volt, 0.700, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

IRFG1Z0

Abstract: irfh25 irfg9110 IRFH150
Contextual Info: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

IRH250

Abstract: TO-254AA Package IRHF130 IRHF230 hexfets IRHM450 IRHM150 IRHG110
Contextual Info: RADIATION HARD HEXFETs — INTERNATIONAL RECTIFIER 2bE INTERNATIONAL RECTIFIER IT O R D 4ÔSS4S2 GOlDSbö 1 T-3Ì-Ò3 • RADIATION HARD HEXFETS N-CHANNEL Types Vos V 1q com R d s io n max) TC - 25°C 'dm pulsed Pd max n A A W Bulletin Case Style SMD-1

2N7334

Abstract: IRFG110 JANTXV2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]

2N7334

Abstract: 2N7334 JANTX IRFG110 JANTX2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER | I « R | AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm The HEXFET technology is the key to International

Contextual Info: Provisional D atasheet No. P D -9.1711 International IOR Rectifier R E P E T IT IV E A V A L A N C H E A N D dv/dt R A T E D IRHG7214 IRHG8214 HEXFET TRANSISTOR N -C H A N N E L MEGA RAD HARD 250Volt, 2.25Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y

IRHNA57064SCS

Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5

JANTX2N7334

Abstract: irfy430
Contextual Info: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6

5z0b

Abstract: T10M
Contextual Info: NOTES: UNLESS OTHERWISE S P E C I F I E D I. LEAD F I N I S H TO BE 200 MICROINCHES / 5 . OB MICROMETERS MINIMUM SOLDER MEASURED AT THE CREST OF THE MAJOR FLA TS . 2. JEDEC REGISTRATION M0-036, VARIATION AA, DATED 0 4 / 19 8 1 . R E V I S I O N S LTR L D E S C R IP T IO N

IR2119

Abstract: ir2110 gate driver
Contextual Info: International IlORl R e c tifie r Power Integrated Circuits High Voltage MOS Gate Driver FEATURES • Drives a pair of H E X FE T s or IGBTs • Two Independent Channel Drivers — One Floating High Side Driver — One Ground Referenced Low Side Driver • Operates to 500V

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

IR2113L

Contextual Info: Other Products from IR Government and Space PICs IR2110, IR2113 High Voltage MOS Gate Driver I vS Offset FEATURES • Drives a pair of HEXFETs or IGBTs • Two Independent Channel Drivers —One Floating High Side Driver —One Ground Referenced Low Side Driver

9437B

Contextual Info: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL IS EACH POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE) Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs

LQFP128

Abstract: LQFP128-P-1818 dvd circuit diagram block diagram of DVD IEEE1394 MN864410
Contextual Info: New SBP-2 IEEE1394LSI MN864410 • Overview The MN864410 is a single-chip IEEE1394 PHY and Link LSI with protocol function complying with the SBP-2 standard. It will bring IEEE1394 interface capability to the storage like DVD-ROM/RAM and HDD. ■ Features