FERROELECTRIC Search Results

25CL64B-GA

Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga
Contextual Info: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

fm25v05-g

Abstract: FM25V05 fm25v05g
Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

rg5H20

Abstract: fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G
Contextual Info: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

1822-HEX

Abstract: HM71V832 HM71V832FP-15 HM71V832T-15 "Ferroelectric RAM" Hitachi 32k static RAM Hitachi DSA00198 Hitachi DSA00198182
Contextual Info: HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20, 1995 Description The HM71V832 is a ferroelectric RAM, or FARM memory, organized as 32k-word x 8-bit. FRAM memory products from Hitachi combine the read/write characteristics of semiconductor RAM with

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-4v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00023-1v0-E Memory FRAM 2 M 256 K x 8 Bit SPI MB85RS2MT • DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

MB85RS1MT

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00025-1v0-E FRAM MB85RS2MT MB85RS2MT is a 2M-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–9E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

GN02018B

Contextual Info: Panasonic GaAs MMICs GN02018B GaAs IC with built-in ferroelectric Unit : mm For mixer with built-in local amplifier of cellular phone Other communication equipment IE • Features • High conversion-gain, low noise, low distortion (IP3) • Single, positive power supply

GN01037B

Contextual Info: Panasonic GaAs MMICs GN01037B GaAs IC with built-in ferroelectric Unit : mm For transmitting preamplifier of cellular phone Other communication equipment IE • Features • Low-noise amplifier with AGC • Single, positive power supply • f= 0.9GHz 3 tn

Contextual Info: FM22L16 4-Mbit 256 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 16 ❐ Configurable as 512 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM24CL16B 16-Kbit 2 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM24V05 512-Kbit 64 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 512-Kbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM31276/FM31278 64-Kbit/256-Kbit Integrated Processor Companion with F-RAM 256-Kbit 32 K x 8 Serial (SPI) F-RAM Features • ■ ■ ■ ■ 64-Kbit/256-Kbit ferroelectric random access memory (F-RAM) ❐ Logically organized as 8 K × 8 (FM31276) / 32 K × 8

Contextual Info: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and