MB85R1002A Search Results

MB85R1002A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MB85R1002ANC-GE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP	Original	PDF		16

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RAMXEED MB85R1002ANC-GE1 F-RAM 1Mbit FeRAM (64k x16) parallel interface - TSOP48 tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MB85R1002ANC-GE1		10			1 $19.93 10 $18.47 100 $16.07 1000 $16.06 10000 $16.06	Buy Now
FUJITSU Limited MB85R1002ANC-GE1 SPECIALTY MEMORY CIRCUIT, PDSO48
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Quest Components	MB85R1002ANC-GE1		108			1 $21.04 10 $21.04 100 $17.89 1000 $17.89 10000 $17.89	Buy Now

MB85R1002A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00006-3v0-E MB85R1002A MB85R1002A I/O16 FPT-48P-M48)	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-3v0-E MB85R1002A MB85R1002A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-3v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-3v0-E MB85R1002A MB85R1002A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-4v0-E Memory FRAM 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-4v0-E MB85R1002A MB85R1002A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-1v0-E Memory FRAM 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-1v0-E MB85R1002A MB85R1002A	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-0v01-E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words × 16 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-0v01-E MB85R1002A MB85R1002A	PDF
DS-501 Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00004-2v0-E Memory FRAM 1 M Bit 64 K  16 MB85R1002A • DESCRIPTIONS The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words  16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process	Original	DS501-00004-2v0-E MB85R1002A MB85R1002A DS-501	PDF