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    256KBIT Search Results

    256KBIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT25DN256-XMHF-B Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation
    AT25DN256-MAHF-Y Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation
    AT25DN256-SSHF-B Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation
    AT25DN256-XMHF-T Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation
    AT25DN256-SSHF-T Renesas Electronics Corporation 256Kbit, 2.3V to 3.6V Range SPI Serial Flash Memory with Dual-Read Support Visit Renesas Electronics Corporation

    256KBIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10-15V

    Abstract: X5563 X5563S8 X5563S8I
    Text: Preliminary Information X5563 CPU Supervisor with 256Kbit SPI EEPROM FEATURES DESCRIPTION • Selectable watchdog time — 0.15s, 0.4s, 0.8s off • Low VCC detection and reset assertion —Four standard reset threshold voltages —Re-program low VCC reset threshold voltage


    Original     		PDF X5563 256Kbit 256Kbits 10MHz 10-15V X5563 X5563S8 X5563S8I

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8

    FM24C256

    Abstract: FM24W256 FM24C256-G
    Text: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24C256 256Kb 256Kbit FM24C256 256-kilobit FM24W256. FM24W256 FM24C256-G

    FM1808

    Abstract: 7058 FM1808-70-P FM1808-70-S MS-011 MS-013
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM1808 256Kb 256Kbit FM1808 256-kilobit MS-011 7058 FM1808-70-P FM1808-70-S MS-011 MS-013

    TMS44C256

    Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
    Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore


    Original     		PDF 16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross

    LE25LB2562

    Abstract: No abstract text available
    Text: Ordering number : ENA1435A LE25LB2562M 256Kbit Serial SPI EEPROM SPI Bus Overview The LE25LB2562M is a 256Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is


    Original     		PDF ENA1435A LE25LB2562M 256Kbit LE25LB2562M A1435-14/14 LE25LB2562

    HMN328D

    Abstract: No abstract text available
    Text: HANBit HMN328D Non-Volatile SRAM MODULE 256Kbit 32K x 8-Bit ,28Pin DIP, 5V Part No. HMN328D GENERAL DESCRIPTION The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits. The HMN328D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write


    Original     		PDF HMN328D 256Kbit 28Pin HMN328D 144-bit

    AK6516CF

    Abstract: EEPROM AK6516C power supply 5v X101 X110
    Text: ASAHI KASEI [AK6516C] AK6516C SPI bus 256Kbit Serial CMOS EEPROM Features … Advanced CMOS EEPROM Technology … Single Voltage Supply: 1.6V to 5.5V … 256Kbits; 32768 x 8 organization … SPI Serial Interface Compatible … Low Power Consumption 0.8µA Max. Standby mode


    Original     		PDF AK6516C] AK6516C 256Kbit 256Kbits; AK6516CF EEPROM AK6516C power supply 5v X101 X110

    Untitled

    Abstract: No abstract text available
    Text: AT88SC0104C, AT88SC3216C, AT88SC0808C, AT88SC1616C, AT88SC0204C AT88SC0404C, AT88SC6416C AT88SC12816C, AT88SC25616C Atmel CryptoMemory Specification Datasheet Features • • A family of nine devices with user memories from 1Kbit to 256Kbit EEPROM user memory


    Original     		PDF AT88SC0104C, AT88SC3216C, AT88SC0808C, AT88SC1616C, AT88SC0204C AT88SC0404C, AT88SC6416C AT88SC12816C, AT88SC25616C 256Kbit

    Untitled

    Abstract: No abstract text available
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM1808 256Kb 256Kbit FM1808 256-kilobit year08, 50013G FM1808-70-PG B063050013G

    95256w6

    Abstract: 95256W
    Text: M95256 256Kbit Serial SPI Bus EEPROM With High Speed Clock FEATURES SUMMARY • Compatible with SPI Bus Serial Interface Positive Clock SPI Modes ■ Figure 1. Packages Single Supply Voltage: – 4.5 to 5.5V for M95256 – 2.5 to 5.5V for M95256-W – 1.8 to 5.5V for M95256-R


    Original     		PDF M95256 256Kbit M95256-W M95256-R 10MHz 95256w6 95256W

    FM18W08

    Abstract: FM1808-70-SG FM1808 fm1808-70-pg MS-013 B063 FM180870SG
    Text: FM1808 256Kb Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM1808 256Kb 256Kbit 32Kx8 Unders/18/2007 FM18W08. FM18W08 FM1808-70-SG FM1808 fm1808-70-pg MS-013 B063 FM180870SG

    FM1808-70-SG

    Abstract: FM1808-70SG FM1808 FM1808-70-PG MS-013 fm180870pg FM180870SG B063050013G
    Text: FM1808 256Kb Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM1808 256Kb 256Kbit 32Kx8 28-pin FM1808-70-SG FM1808-70SG FM1808 FM1808-70-PG MS-013 fm180870pg FM180870SG B063050013G

    FM28V020-SG

    Abstract: FM28V020-SGTR FM28V020 FM18L08
    Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit 32Kx8 40MHz FM28V020 28-pin MS-013D FM28V020, FM28V020-SG FM28V020-SG FM28V020-SGTR FM18L08

    THE M48Z

    Abstract: AN1012 M48Z35 M48Z35Y SOH28
    Text: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y 256Kbit 32Kbit M48Z35: M48Z35Y: PCDIP28 28-lead PCDIP28: M48Z35 THE M48Z AN1012 M48Z35Y SOH28

    NTE27C256-70D

    Abstract: NTE27C256-15D NTE27C256-12D
    Text: NTE27C256−12D, NTE27C256−15D, NTE27C256−15P, NTE27C256−70D Integrated Circuit 256 Kbit 32Kb x 8 EPROM Description: The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D,


    Original     		PDF NTE27C256-12D, NTE27C256-15D, NTE27C256-15P, NTE27C256-70D NTE27C256 256Kbit 28-Lead NTE27C256-70D NTE27C256-15D NTE27C256-12D

    FM1808

    Abstract: e1 fram FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S MS-013 water level electrical control circuit diagram
    Text: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules


    Original     		PDF FM1808 256Kb 256Kbit FM1808 256-kilobit MS-011 e1 fram FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S MS-013 water level electrical control circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: IS25CD025 256Kbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS25CD025: 32K x 8 256Kbit • Cost Effective Sector/Block Architecture


    Original     		PDF IS25CD025 256Kbit IS25CD025: 256Kbit) -256Kb 32KByte IS25CD025-JNLE IS25CD025-JDLE IS25CD025-JNLA*

    SOH28

    Abstract: M48Z35AV
    Text: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE


    Original     		PDF M48Z35AV 256Kbit 32Kbit 28-lead PCDIP28 M48Z35AV: SOH28 M48Z35AV

    M48Z35

    Abstract: M48Z35Y SOH28
    Text: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y 256Kbit 32Kbit M48Z35: M48Z35Y: 28-lead M48Z35 M48Z35Y SOH28

    Untitled

    Abstract: No abstract text available
    Text: HB56D25609A/B-85A/10A/12A 262,144-Word x 9-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION The HB56A25609 is a 256K x 9 dynamic RAM module, mounted two 1-Mbit DRAM HM514256A sealed in SOJ package and 256Kbit DRAM (HM51256) sealed in PLCC package. An outline of the


    OCR Scan     		PDF HB56D25609A/B-85A/10A/12A 144-Word HB56A25609 HM514256A) 256Kbit HM51256) 30-pin HB56A25609A) HB56A25609B)

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C256 G 256KBit (32Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C2S& 28-pfci IMP (Polarity pnQnnNM bli cMp a m U i pin M d output enable pin) • KM23C2S6Q: 32-pin SOP (Polarity programmable cMp enable pin and output enable pin)


    OCR Scan     		PDF KM23C256 256KBit 32Kx8) KM23C2S& 28-pfci KM23C2S6Q: 32-pin 120ns 100pA

    Untitled

    Abstract: No abstract text available
    Text: Digital Subscriber Line ADSL APPLICATION • ADSL Asymmetrical Digital Subscriber Line Provides POTS and High Speed Data on ONE Existing Line • Does NOT Tie Up a Switched Circuit at Central Office • Data Rates to 8Mbits (Downstream) and to 256kbits (Upstream)


    OCR Scan     		PDF 256kbits

    M6378A

    Abstract: MSM6388 MSM62* ADPCM 63P74 MSM6376 MSM63* ADPCM
    Text: O K I Semiconductor INTRODUCTION 1. VOICE SYNTHESIS LSI PRODUCTS OKI SPEECH LSI PRODUCTS SYNTHESIZER Internal Mask-ROM -M SM 6375 FAMILY- Internal OTP External ROM M SM 6372 128Kbit M SM 6373 256Kbit M SM 6374 512Kbit M SM 6375 1M bit M SM 63P74 75 Family


    OCR Scan     		PDF 128Kbit 256Kbit 512Kbit 63P74 MSM6376 MSM6295 MSM5205 MSM6585 MSM6586 MSM6587 M6378A MSM6388 MSM62* ADPCM MSM63* ADPCM