IR2110E Search Results

1RFBC40

Contextual Info: International IOR Rectifier Data Sheet No. PD-6.065 IR2110E6 HIGH AND LOW SIDE DRIVER Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

IR2110 application note

Abstract: IR2110 IR2110E6 IR2110S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MP150 IR2110 design
Contextual Info: PD - 60065A IR2110E6 HIGH AND LOW SIDE DRIVER Product Summary Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

IR2110 application note

Abstract: IR2110 IR2110E6 IR2110S IRFBC20 IRFBC30 IRFBC40 IRFPE50
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.065 IR2110E6 HIGH AND LOW SIDE DRIVER Product Summary Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V

IR2110 application note

Abstract: IR2110 AN IR2110 ir2110 circuit DIAGRAM transistor irfbc40 IR2110E6 IR2110S IRFBC20 IRFBC30 IRFBC40
Contextual Info: Data Sheet No. PD-6.065 IR2110E6 HIGH AND LOW SIDE DRIVER Product Summary Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

Contextual Info: Government/ Space Products International ^Rectifier PIC — High Reliability Type IR2110L/IR2110E High Voltage M OS Gate Driver FEATURES • Drives a pair of H EXFETs or IGBTs • Two Independent Channel Drivers — One Floating High Side Driver — One Ground Referenced Low Side Driver

Contextual Info: PD-60086C IR2110E4 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

IR2110

Abstract: IR2110 application note transistor irfbc40 IR2110E4 IR2110S IRFBC20 IRFBC30 IRFBC40 IRFPE50
Contextual Info: Data Sheet No. PD-6.086A IR2110E4 HIGH AND LOW SIDE DRIVER Product Summary Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V

Contextual Info: I . ,• I Data Sheet No. PD-6.086A iGRRectifier IR2110E4 International HIGH AND LOW SIDE DRIVER Product Summary Features • Floating channel designed for bootstrap operation VOFFSET 400V max. Fully operational to +400V Tolerant to negative transient voltage

Contextual Info: PD - 60086B International IQ R Rectifier IR2110E4 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +400V ■ ■ ■ ■ ■ ■ ■ Tolerant to negative transient voltage dV/dt immune

IR2110

Abstract: IR2110E4 IR2110S IRFBC20 IRFBC30 IRFBC40 IRFPE50
Contextual Info: PD - 60086B IR2110E4 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

ir2110 circuit DIAGRAM

Contextual Info: PD-60086C IR2110E4 HIGH AND LOW SIDE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

IRGAC50

Abstract: MO036AA IRGAC50U IRGAC50F
Contextual Info: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)

IRHNA57064SCS

Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5

IR2113L

Contextual Info: Other Products from IR Government and Space PICs IR2110, IR2113 High Voltage MOS Gate Driver I vS Offset FEATURES • Drives a pair of HEXFETs or IGBTs • Two Independent Channel Drivers —One Floating High Side Driver —One Ground Referenced Low Side Driver

Contextual Info: Dato Sheet No. PD-6.086 International I R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage VOFFSET 400V max.

RE26A

Contextual Info: Data Sheet No. PD-6.086A International I O R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features Floating channel designed for bootstrap VOFFSET 400V max. lo+/- 2A/2A VOUT 1 0 -2 0 V ton/off ty p . 120 & 94 ns Delay Matching 10 ns

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

ir2110 gate driver

Contextual Info: Government and Space International lüRectifier PiCs IR2110, IR2113 High Voltage MOS Gate Driver FEATURES • Drives a pair of H EX F ET s or IGBTs • Two Independent Channel Drivers — One Floating High Side Driver — One Ground Referenced Low Side Driver

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

IRHNJ597230SCS

Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
Contextual Info: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5