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    VP22 Search Results

    VP22 Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    VP22003
    Philips Semiconductors Kernel Processor Original PDF 706.57KB 6
    VP2206
    Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 30.52KB 4
    VP2206N2
    Supertex 60V P-channel enhancement-mode vertical DMOS FET Original PDF 466.04KB 4
    VP2206N3
    Supertex 60V P-channel enhancement-mode vertical DMOS FET Original PDF 466.04KB 4
    VP2206N3-G
    Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 640MA TO92-3 Original PDF 674.84KB
    VP2206N3-G-P003
    Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 640MA TO92-3 Original PDF 674.84KB
    VP22EPM
    Carlo Gavazzi Conductive Level Sensors Original PDF 170KB 2
    VP22EPM-1
    Carlo Gavazzi Photoelectric Sensors Original PDF 170KB 2
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    VP22 Price and Stock

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    Panasonic Electronic Components 16SVP22M

    Cap Aluminum Polymer 22uF 16VDC 20% (5 X 5.9mm) SMD 0.09 Ohm 1060mA 2000h 105°C T/R
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    RS 16SVP22M Bulk 1,500
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    Panasonic Electronic Components 20SVP22M

    Cap Aluminum Polymer 22uF 20VDC 20% (6.3 X 5.9mm) SMD 0.06 Ohm 1450mA 2000h 105°C T/R
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    Master Electronics 20SVP22M 3,348
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    Panasonic Electronic Components 6SVP22M

    Cap Aluminum Polymer 22uF 6.3VDC 20% (4 X 5.4mm) SMD 0.2 Ohm 740mA 2000h 105°C T/R
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    Master Electronics 6SVP22M 2,000
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    TE Connectivity AVP22MS16CE0DT5A04

    AVP22M CONC. S16 RGB R 500MM/1X6
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    TE Connectivity AVP22MS16CE0DT5A04 19 1
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    Panasonic Electronic Components 2R5SVP220M

    Cap Aluminum Polymer 220uF 2.5VDC 20% (6.3 X 5.9mm) SMD 0.023 Ohm 2390mA 2000h 105°C T/R
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    VP22 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VP2204N3

    Abstract: VP2204 VP2210 VP2206N3
    Contextual Info: VP 22A G ì Super te x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss •' ^DS O N b v dgs (max) If Standard Commercial Devices 40V 0.9Q -4A VP2204N3 VP2204ND 60V 0.9Q -4A VP2206N3 VP2206ND -100V 0.9Î2 -4A VP2210N3 VP2210ND


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    vp2204n3vp2206n3vp2210n3vp2204nd+6vp2206ndvp2210nd-100v300jasvp2204vp2210 PDF

    Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    vp2206dspd-3to39n2a070808dspd-3to92n3+3d070808dsfp-vp2206a072808 PDF

    2206N2

    Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    vp2206dsfp-vp2206b1226082206n2 PDF

    Contextual Info: VP2206N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)1.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6 Minimum Operating Temp (øC)-55


    Original
    vp2206n2junc-case20 PDF

    VP2210ND

    Abstract: VP2210N2
    Contextual Info: VP2206 = j 1 1L j= L r «HHHMr | r' : L J - ' 7r C, vp22io ft P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^DS(ON BVdgs (max) -60V 0.9Q -100V 0.9Q Order Number / Package If b v dss/ TO-39 TO-92 DICEt -4A VP2206N2 VP2206N3 VP2206ND


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    vp2206vp22io-100vvp2206n2+6vp2210n2vp2206n3vp2210n3vp2206ndvp2210ndvp2206/v PDF

    Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs RdS ON (max) -60V 0.9£2 Order Number / Package If b v dss/ -4A TO-39 VP2206N2 TO-92 Diet VP2206N3 VP2206ND ÎM IL visua l screening a vailable Advanced DMOS Technology


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    vp2206vp2206n2vp2206n3vp2206nd PDF

    Contextual Info: VP2204N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)1.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6 Minimum Operating Temp (øC)-55


    Original
    vp2204n2junc-case20 PDF

    Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RdS<ON -60V 0.9Q max) Order Number / Package TO-92 TO-39 If BVoss / BVoos -4A VP2206N2 Diet VP2206ND VP2206N3 *MJL visual screening available Advanced DMOS Technology


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    vp2206vp2206n2vp2206n3vp2206nd PDF

    VP2206

    Contextual Info: VP2206 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 70 85 11 ± 1.5 Au 1 (mils) VP2206 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


    Original
    vp2206a040609 PDF

    VP2210

    Contextual Info: VP2206 VP2210 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package ^OS ON TO-39 TO-92 DICEt -60V 0.90. -4A VP2206N2 VP2206N3 VP2206ND -100V 0.9Q -4A VP2210N2 VP2210N3 VP2210ND If BVoss / BV bqs (max) * MIL visual screening available


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    vp2206vp2210vp2206n2vp2206n3+6vp2206nd-100vvp2210n2vp2210n3vp2210ndvp2206/vp2210 PDF

    VP2210

    Abstract: VP2206N2 VP2206 VP2206N3 VP2206ND VP2210N2 VP2210N3 VP2210ND To-92 60w 2a
    Contextual Info: VP2206 VP2210 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 DICE† -60V 0.9Ω -4A VP2206N2 VP2206N3 VP2206ND -100V 0.9Ω -4A VP2210N2 VP2210N3 VP2210ND


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    vp2206vp2210vp2206n2vp2206n3+6vp2206nd-100vvp2210n2vp2210n3vp2210ndto-92 60w 2a PDF

    VP2206N3

    Abstract: VP2206 VP2206N2
    Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS ON (max) ID(ON) (min) -60V 0.9Ω -4A Order Number / Package TO-39 TO-92 VP2206N2 VP2206N3 MIL visual screening available Advanced DMOS Technology High Reliability Devices


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    vp2206vp2206n2vp2206n3 PDF

    mos die

    Abstract: VP2206 VP2206N2 VP2206N3 VP2206ND
    Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 Die† -60V 0.9Ω -4A VP2206N2 VP2206N3 VP2206ND MIL visual screening available Advanced DMOS Technology


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    vp2206vp2206n2vp2206n3vp2206nd+2de-10mos die PDF

    Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability


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    vp2206dsfp-vp2206d031411 PDF

    Contextual Info: VP2204N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)650m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1 Minimum Operating Temp (øC)-55


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    vp2204n3junc-case125 PDF

    2206N2

    Abstract: 125OC VP2206 VP2206N2
    Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain


    Original
    vp2206dsfp-vp2206c0326102206n2+2125ocvp2206n2 PDF

    Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    vp2206dsfp-vp2206b091508 PDF

    2206n2

    Abstract: SIVP VP2206 VP2206N2 B06030
    Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    vp2206dsfp-vp2206b0603092206n2+3sivpvp2206n2b06030 PDF

    VP222D-36N1

    Contextual Info: Surface Mount Voltage Variable Phase Shifter 2200 MHz, 10% Bandwidth Package Style 36 VP222D-36N1 Key Features • • • Low Loss - 1.2 dB Phase Shift - 110° Solder Reflow to +240°C Guaranteed Specifications Insertion Loss dB TYP 1.2 MAX 1.6 Phase Shift (deg)


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    vp222d-36n1 PDF

    VP2206N2

    Abstract: VF52 2206N2 VP2206 vp5206
    Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


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    vp2206dsfp-vp2206d031411vp2206n2+3vf522206n2vp5206 PDF

    vp22a

    Abstract: VP2210N2
    Contextual Info: . V P 2 2A inc P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices R d S{ON -40V 0.9£i max) Order Num ber / Package If BVdss/ BV dgs TO-92 DICE* VP2204N2 VP2204N3 VP2204ND TO-39 -4A -60V 0.9Q -4A VP2206N2 VP2206N3


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    vp2204n3vp2206n3vp2210n3vp2204nd+7vp2206ndvp2210nd-100vvp2204n2vp2206n2vp2210n2vp22a PDF

    2206N2

    Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► High input impedance and high gain


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    vp2206dsfp-vp2206e0823132206n2 PDF

    Contextual Info: blE » SUPERTEX INC • fl?732c15 OQOBEb^ ST3 « S T X VP22A Super te x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BV oss/ R d S ON • d(0N) B V DGS (max) (min) TO-39 Order Number / Package TO-92 DICE*


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    vp22avp2204n2vp2204n3vp2204nd+6vp2206n2vp2206n3vp2206nd-100vvp2210n2vp2210n3 PDF

    Contextual Info: MA4C563B Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 200m Peak Curr. Tol.20m Total Cap. (F)200p Ip/Iv Min12 Vp225m Vv550m Fwd Volt @Ipeak1.2 Resist. Cutoff Freq Series Induct. (H)300p R(series) (Ohms) Neg Resist. Semiconductor MaterialGaAs


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    ma4c563bmin12vp225mvv550m+1styledo-25var PDF