VP22 Search Results
VP22 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| VP22003 | Philips Semiconductors | Kernel Processor | Original | 706.57KB | 6 | ||
| VP2206 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 30.52KB | 4 | ||
| VP2206N2 | Supertex | 60V P-channel enhancement-mode vertical DMOS FET | Original | 466.04KB | 4 | ||
| VP2206N3 | Supertex | 60V P-channel enhancement-mode vertical DMOS FET | Original | 466.04KB | 4 | ||
| VP2206N3-G | Microchip Technology | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 640MA TO92-3 | Original | 674.84KB | |||
| VP2206N3-G-P003 | Microchip Technology | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 640MA TO92-3 | Original | 674.84KB | |||
| VP22EPM | Carlo Gavazzi | Conductive Level Sensors | Original | 170KB | 2 | ||
| VP22EPM-1 | Carlo Gavazzi | Photoelectric Sensors | Original | 170KB | 2 |
VP22 Price and Stock
Panasonic Electronic Components 16SVP22MCap Aluminum Polymer 22uF 16VDC 20% (5 X 5.9mm) SMD 0.09 Ohm 1060mA 2000h 105°C T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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16SVP22M | 4,500 |
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16SVP22M | Ammo Pack | 1 |
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| 16SVP22M | Tape & Reel | 55 Weeks | 1,500 |
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16SVP22M | Tape & Reel | 3,000 | 1,500 |
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| 16SVP22M | Tape & Reel | 356 | 100 |
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| 16SVP22M | Cut Tape | 356 | 1 |
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16SVP22M | Bulk | 1,500 |
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16SVP22M | Reel | 1,500 |
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16SVP22M | 2 |
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16SVP22M | Tape & Reel | 1,500 | 64 Weeks | 1,500 |
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16SVP22M | 12 Weeks | 1,500 |
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Panasonic Electronic Components 20SVP22MCap Aluminum Polymer 22uF 20VDC 20% (6.3 X 5.9mm) SMD 0.06 Ohm 1450mA 2000h 105°C T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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20SVP22M | 3,348 |
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20SVP22M | Tape & Reel | 1,000 | 55 Weeks | 1,000 |
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20SVP22M | Reel | 1,000 |
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20SVP22M | Tape & Reel | 64 Weeks | 1,000 |
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20SVP22M | 25 Weeks, 5 Days | 1,000 |
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Panasonic Electronic Components 6SVP22MCap Aluminum Polymer 22uF 6.3VDC 20% (4 X 5.4mm) SMD 0.2 Ohm 740mA 2000h 105°C T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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6SVP22M | 2,000 |
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6SVP22M | Ammo Pack | 1 |
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| 6SVP22M | Tape & Reel | 55 Weeks | 2,000 |
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6SVP22M | Cut Tape | 1,825 | 1 |
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| 6SVP22M | Tape & Reel | 1,825 | 10 |
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| 6SVP22M | Cut Tape | 327 | 5 |
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| 6SVP22M | Tape & Reel | 327 | 100 |
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6SVP22M | Reel | 2,000 | 2,000 |
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6SVP22M | 2,000 |
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6SVP22M | Tape & Reel | 64 Weeks | 2,000 |
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6SVP22M | 12 Weeks | 2,000 |
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TE Connectivity AVP22MS16CE0DT5A04AVP22M CONC. S16 RGB R 500MM/1X6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AVP22MS16CE0DT5A04 |
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AVP22MS16CE0DT5A04 | Bag | 16 Weeks, 1 Days | 100 |
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AVP22MS16CE0DT5A04 | 19 | 1 |
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Panasonic Electronic Components 2R5SVP220MCap Aluminum Polymer 220uF 2.5VDC 20% (6.3 X 5.9mm) SMD 0.023 Ohm 2390mA 2000h 105°C T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2R5SVP220M |
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2R5SVP220M | Tape & Reel | 42 Weeks | 1,000 |
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2R5SVP220M | Tape & Reel | 64 Weeks | 1,000 |
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VP22 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
VP2204N3
Abstract: VP2204 VP2210 VP2206N3
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OCR Scan |
vp2204n3vp2206n3vp2210n3vp2204nd+6 | |
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Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
Original |
vp2206dspd-3to39n2a070808dspd-3to92n3+3 | |
2206N2Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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vp2206dsfp-vp2206b1226082206n2 | |
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Contextual Info: VP2206N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)1.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6 Minimum Operating Temp (øC)-55 |
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vp2206n2junc-case20 | |
VP2210ND
Abstract: VP2210N2
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OCR Scan |
vp2206vp22io-100vvp2206n2+6 | |
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Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs RdS ON (max) -60V 0.9£2 Order Number / Package If b v dss/ -4A TO-39 VP2206N2 TO-92 Diet VP2206N3 VP2206ND ÎM IL visua l screening a vailable Advanced DMOS Technology |
OCR Scan |
vp2206vp2206n2vp2206n3vp2206nd | |
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Contextual Info: VP2204N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)1.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6 Minimum Operating Temp (øC)-55 |
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vp2204n2junc-case20 | |
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Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RdS<ON -60V 0.9Q max) Order Number / Package TO-92 TO-39 If BVoss / BVoos -4A VP2206N2 Diet VP2206ND VP2206N3 *MJL visual screening available Advanced DMOS Technology |
OCR Scan |
vp2206vp2206n2vp2206n3vp2206nd | |
VP2206Contextual Info: VP2206 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 70 85 11 ± 1.5 Au 1 (mils) VP2206 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain |
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vp2206a040609 | |
VP2210Contextual Info: VP2206 VP2210 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package ^OS ON TO-39 TO-92 DICEt -60V 0.90. -4A VP2206N2 VP2206N3 VP2206ND -100V 0.9Q -4A VP2210N2 VP2210N3 VP2210ND If BVoss / BV bqs (max) * MIL visual screening available |
OCR Scan |
vp2206vp2210vp2206n2vp2206n3+6 | |
VP2210
Abstract: VP2206N2 VP2206 VP2206N3 VP2206ND VP2210N2 VP2210N3 VP2210ND To-92 60w 2a
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vp2206vp2210vp2206n2vp2206n3+6 | |
VP2206N3
Abstract: VP2206 VP2206N2
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vp2206vp2206n2vp2206n3 | |
mos die
Abstract: VP2206 VP2206N2 VP2206N3 VP2206ND
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vp2206vp2206n2vp2206n3vp2206nd+2 | |
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Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability |
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vp2206dsfp-vp2206d031411 | |
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Contextual Info: VP2204N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)650m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1 Minimum Operating Temp (øC)-55 |
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vp2204n3junc-case125 | |
2206N2
Abstract: 125OC VP2206 VP2206N2
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vp2206dsfp-vp2206c0326102206n2+2 | |
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Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
Original |
vp2206dsfp-vp2206b091508 | |
2206n2
Abstract: SIVP VP2206 VP2206N2 B06030
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Original |
vp2206dsfp-vp2206b0603092206n2+3 | |
VP222D-36N1Contextual Info: Surface Mount Voltage Variable Phase Shifter 2200 MHz, 10% Bandwidth Package Style 36 VP222D-36N1 Key Features • • • Low Loss - 1.2 dB Phase Shift - 110° Solder Reflow to +240°C Guaranteed Specifications Insertion Loss dB TYP 1.2 MAX 1.6 Phase Shift (deg) |
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vp222d-36n1 | |
VP2206N2
Abstract: VF52 2206N2 VP2206 vp5206
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vp2206dsfp-vp2206d031411vp2206n2+3 | |
vp22a
Abstract: VP2210N2
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OCR Scan |
vp2204n3vp2206n3vp2210n3vp2204nd+7 | |
2206N2Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► High input impedance and high gain |
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vp2206dsfp-vp2206e0823132206n2 | |
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Contextual Info: blE » SUPERTEX INC • fl?732c15 OQOBEb^ ST3 « S T X VP22A Super te x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BV oss/ R d S ON • d(0N) B V DGS (max) (min) TO-39 Order Number / Package TO-92 DICE* |
OCR Scan |
vp22avp2204n2vp2204n3vp2204nd+6 | |
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Contextual Info: MA4C563B Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 200m Peak Curr. Tol.20m Total Cap. (F)200p Ip/Iv Min12 Vp225m Vv550m Fwd Volt @Ipeak1.2 Resist. Cutoff Freq Series Induct. (H)300p R(series) (Ohms) Neg Resist. Semiconductor MaterialGaAs |
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ma4c563bmin12vp225mvv550m+1 | |