VP2206N3 Search Results
VP2206N3 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| VP2206N3 | Supertex | 60V P-channel enhancement-mode vertical DMOS FET | Original | 466.04KB | 4 | ||
| VP2206N3-G | Microchip Technology | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 640MA TO92-3 | Original | 674.84KB | |||
| VP2206N3-G-P003 | Microchip Technology | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 640MA TO92-3 | Original | 674.84KB |
VP2206N3 Price and Stock
Microchip Technology Inc VP2206N3-GTrans MOSFET P-CH Si 60V 0.64A 3-Pin TO-92 Bag |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VP2206N3-G | 998 | 24 |
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VP2206N3-G | Bag | 4 Weeks | 1,000 |
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VP2206N3-G | 810 |
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VP2206N3-G | Bulk | 52 | 1 |
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VP2206N3-G | Bulk | 6 Weeks | 1,000 |
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VP2206N3-G | Bag | 22,000 | 6 Weeks |
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VP2206N3-G | 349 |
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VP2206N3-G | 15 | 1 |
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VP2206N3-G | 12 |
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VP2206N3-G | 6 Weeks | 1,000 |
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VP2206N3-G | 5 Weeks | 1,000 |
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VP2206N3-G | 349 |
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Microchip Technology Inc VP2206N3-G-P003- Tape and Reel (Alt: VP2206N3-G-P003) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VP2206N3-G-P003 | Tape & Reel | 6 Weeks | 2,000 |
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VP2206N3-G-P003 | 1,795 |
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VP2206N3-G-P003 | Bulk | 9 Weeks | 2,000 |
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VP2206N3-G-P003 | Tape & Reel | 6 Weeks |
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VP2206N3-G-P003 |
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VP2206N3-G-P003 |
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Microchip Technology Inc VP2206N3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VP2206N3 |
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Others VP2206N3Trans MOSFET P-CH Si 60V 0.64A 3-Pin TO-92 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VP2206N3 | 537 |
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Supertex Inc VP2206N3-G |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VP2206N3-G | 41 |
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VP2206N3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
VP2204N3
Abstract: VP2204 VP2210 VP2206N3
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OCR Scan |
vp2204n3vp2206n3vp2210n3vp2204nd+6 | |
VP2210ND
Abstract: VP2210N2
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OCR Scan |
vp2206vp22io-100vvp2206n2+6 | |
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Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs RdS ON (max) -60V 0.9£2 Order Number / Package If b v dss/ -4A TO-39 VP2206N2 TO-92 Diet VP2206N3 VP2206ND ÎM IL visua l screening a vailable Advanced DMOS Technology |
OCR Scan |
vp2206vp2206n2vp2206n3vp2206nd | |
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Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RdS<ON -60V 0.9Q max) Order Number / Package TO-92 TO-39 If BVoss / BVoos -4A VP2206N2 Diet VP2206ND VP2206N3 *MJL visual screening available Advanced DMOS Technology |
OCR Scan |
vp2206vp2206n2vp2206n3vp2206nd | |
VP2210Contextual Info: VP2206 VP2210 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package ^OS ON TO-39 TO-92 DICEt -60V 0.90. -4A VP2206N2 VP2206N3 VP2206ND -100V 0.9Q -4A VP2210N2 VP2210N3 VP2210ND If BVoss / BV bqs (max) * MIL visual screening available |
OCR Scan |
vp2206vp2210vp2206n2vp2206n3+6 | |
VP2210
Abstract: VP2206N2 VP2206 VP2206N3 VP2206ND VP2210N2 VP2210N3 VP2210ND To-92 60w 2a
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vp2206vp2210vp2206n2vp2206n3+6 | |
VP2206N3
Abstract: VP2206 VP2206N2
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vp2206vp2206n2vp2206n3 | |
mos die
Abstract: VP2206 VP2206N2 VP2206N3 VP2206ND
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vp2206vp2206n2vp2206n3vp2206nd+2 | |
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Contextual Info: VP2206N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)650m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1 Minimum Operating Temp (øC)-55 |
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vp2206n3junc-case125 | |
vp22a
Abstract: VP2210N2
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OCR Scan |
vp2204n3vp2206n3vp2210n3vp2204nd+7 | |
TN0604N3
Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
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2n6659vn2210n2tn0104n32n7007+16 | |
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Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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vp2206dspd-3to39n2a070808dspd-3to92n3+3 | |
2206N2Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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vp2206dsfp-vp2206b1226082206n2 | |
TO243AA
Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
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2n7000-g2n7002-gdn1509n8-gdn2470k4-g+16 | |
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DN2540N5
Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
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2n70002n70022n7008dn2470k4+15 | |
PLCC-6 5050
Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
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sa146rsplcc-6 5050p-channel mosfet 400v to220pj 84+7 | |
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Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability |
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vp2206dsfp-vp2206d031411 | |
2206N2
Abstract: 125OC VP2206 VP2206N2
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vp2206dsfp-vp2206c0326102206n2+2 | |
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Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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vp2206dsfp-vp2206b091508 | |
2206n2
Abstract: SIVP VP2206 VP2206N2 B06030
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vp2206dsfp-vp2206b0603092206n2+3 | |
VP2206N2
Abstract: VF52 2206N2 VP2206 vp5206
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vp2206dsfp-vp2206d031411vp2206n2+3 | |
2206N2Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► High input impedance and high gain |
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vp2206dsfp-vp2206e0823132206n2 | |
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Contextual Info: blE » SUPERTEX INC • fl?732c15 OQOBEb^ ST3 « S T X VP22A Super te x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BV oss/ R d S ON • d(0N) B V DGS (max) (min) TO-39 Order Number / Package TO-92 DICE* |
OCR Scan |
vp22avp2204n2vp2204n3vp2204nd+6 | |
HV50530PG
Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
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2n66592n7007an0332cgap0332cg+16 | |