FERAM Search Results

"Ferroelectric RAM"

Abstract: FeRAM Ferroelectric RAM MN63Y1005 ferroelectric M00364BE NRZL block diagram
Contextual Info: New FeRAM Embedded IC MN63Y1005 for Contactless IC card and Tag • Overview MN63Y1005 is a nonvolatile ferroelectric random access memory FeRAM embedded IC for contactless IC card and tag. The IC is powered by radio waves from a read/write unit and for

JISX6319-4

Abstract: MN63Y1210 FELICA MN63Y1208 nfc antenna design NFC RF QFN016-P-0304C nfc tag nfc antenna test
Contextual Info: NFC Tag with Built-in FeRAM NFC Tag LSI MN63Y1208 „ Overview MN63Y1208 is an NFC tag LSI, which is compliant with the NFC forum specification. The built-in fast, low-power non-volatile memory FeRAM allows for stable non-contact communication even while no external power is supplied. Additionally, AES

Contextual Info: FEDR44V064A-01 Issue Date: Apr. 22, 2013 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

Contextual Info: FEDR45V256A-01 Issue Date: Nov. 12, 2013 MR45V256A 256k 32,768-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V256A is accessed using Serial

PANASONIC sram card 34 pin

Abstract: MN101CY177 FP044
Contextual Info: Panasonic C language-oriented 8-bit Microcontroller MN101CY177 with ferroelectric RAM FeRAM embedded I O verview This microcontroller is a sin gle-chip microcontroller that equips ferroelectric RA M (FeRAM ) with the C language-oriented high speed 8 -b it CPU core. It incorporates h igh -p recision 10-bit A /D converter, m ulti-functioned timer counter, serial

taa900

Contextual Info: FEDR44V064A-01 Issue Date: Apr. 22, 2013 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

Contextual Info: PEDR45V256A-05 Issue Date: Oct. 17, 2011 MR45V256A 256k 32,768-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V256A is accessed using Serial

MR44V064A

Abstract: PEDR44V064A-05
Contextual Info: PEDR44V064A-05 Issue Date: Oct. 17, 2011 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

FeRAM

Abstract: interfacing sram and dram PZT material Wordwise universal eeprom
Contextual Info: FeRAM Memory What are ferro-electric RAMs ? are are non-volatile non-volatile memories memories like (like Flash Flash) have have aa DRAMs DRAMs read/write read/write performance performance •• •• have have low low voltage voltage // low low power

20034

Abstract: FeRAM cosmoram 512MB SRAM TRUEFFS LQFP64 TMP86FM48F TMP86FM48U Diskonchip
Contextual Info: VOLUME 129 東芝半導体情報誌アイ 2003年4月号 CONTENTS 4 INFORMATION •世界最大容量32メガビット FeRAMを開発 .P2 ■バースト機能搭載擬似SRAMの インターフェイス仕様を共通化 .P2

Contextual Info: FEDR48V256C-01 Issue Date: Nov. 13, 2013 MR48V256C 32,768-Word  8-Bit FeRAM Ferroelectric Random Access Memory GENERAL DESCRIPTION The MR48V256C is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are

Contextual Info: FEDR45V200A-01 Issue Date: Jan. 31, 2014 MR45V200A 2M 262,144-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V200A is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V200A is accessed using

Contextual Info: FEDR45V032A-01 Issue Date: Oct. 23, 2013 MR45V032A 32k 4,096-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V032A is a nonvolatile 4,096-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V032A is accessed using Serial

FeRAM

Contextual Info: PEDR48V256A-06 Issue Date: Oct. 17, 2011 MR48V256A 32,768-Word  8-Bit FeRAM Ferroelectric Random Access Memory GENERAL DESCRIPTION The MR48V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are

FM18L08

Abstract: HC151 7171 GE nagra toshiba FeRAM Flight Data Recorder
Contextual Info: MINNEN/LAGRINGSMEDIA Komponenter Störst och snabbast Toshiba ligger långt framme i utvecklandet av nya minnestyper. Vid ISSCC-kongressen i San Francisco nyligen presenterade man två viktiga framsteg inom FeRAM och MRAM. Det ena är ett nytt ferroelektriskt RAM FeRAM

Contextual Info: DATA SHEET Part No. MN63Y1210A Package Code No. SSOP016-P-0225E Publication date: June 2013 Ver. AEM 1 Contents Chapter 1 Overview . 9 1.1

MR25H10

Abstract: MR25H10C M25H1 MR25H10CDC M25H10 MR25H10M mr25h10mdc MR25H10CDCR MO-229 DFN 10 socket
Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply range

Contextual Info: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.

mcz 300 1bd

Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
Contextual Info: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION

DFN 10 socket

Contextual Info: MR25H256 FEATURES • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply range

diode G727

Abstract: IRH150 T0204 731 MOSFET annealing copper g730 J600 MOSFET G-731 IRH15Q
Contextual Info: HE D I 4055452 GQG^SG 7 | INTERNATIONAL R E C T I F I E R Preliminary Data Sheet No. PD-9.478A INTERNATIONAL RECTIFIER HEXF ET TRANSISTORS IRH15Q RAD HARD Product Summary 100 Volt, 0.0550, Rad Hard HEXFET International R e ctifie r’s RAD HARD H EXFETs demonstrate excellent threshold voltage stability and

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

IC SEM 2004

Abstract: ED-4701-304 AB-6201 failure rate TDDB JIS-C-7032 ED-4701-102 ED-4701-303 EIAJ AB-6201 Z81151981 HGSM
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MN63Y2006

Abstract: digital security system block diagram FeRAM
Contextual Info: Ensures Safety of Customers with High-Level Security Technology LSI for Device Authentication Tag MN63Y2006 „ Overview MN63Y2006 is a ultra-small LSI which can be used for device authentication with its cryptography feature, ensuring high level of security equal to or higher than Triple-DES.