2N7089 Search Results

Contextual Info: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View

transistor 257A

Abstract: 2N7089 SD 4248
Contextual Info: CX*Siliconix Jm M 2N7089 in c o r p o r a t e d P-Channel Enhancement Mode Transistor TO -257A B Herm etic Package TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) (il) (A) -1 0 0 0.30 -10 .0 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

B0530

Abstract: 2N7089
Contextual Info: T em ic 2N7089 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (£2) I d (A) -1 0 0 0.30 -1 0 TO-2S7AB Hermetic Package o Case Isolated G D S P-Channel MOSFET Top View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

B0530

Abstract: 2N7089
Contextual Info: 2N7089 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -100 0.30 -10 TOĆ257AB Hermetic Package S G Case Isolated D G D S PĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

257AB

Abstract: BS250 2N7080 2N7082 2N7085 2N7086 2N7089 2N7090 2N7091 2N7092
Contextual Info: - 317 - * * Vd s Sí € tt £ Vg s m. Ta=25*C Id I g ss Pd V g s th) I d ss i fé f Ds(on) Vd s = or « m (Ta=25‘ C) Iß(on) g fs ft Ci ss Coss Crss (*typ) (max) (pF) (*typ) (max) (pF) (*typ) (max) (pF) 450* V g s -0 Vg s * /CH Vdg min * /CH (nA) Vg s

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

si 13001

Abstract: buz90 BS170 BUZ11 buzh F133 251C BSS123 BUZ71 BUZ71A
Contextual Info: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0

SMP16P06

Abstract: SMM14N65 SMW60N06-18 SMP25N06 SMW60N10 SMP60N06-18 MDD100B SMM24N40 SMM40N20 SMV1P06
Contextual Info: CXSiliconix in c o r p o r a te d Selector Guide Plastic Packages N-Channel Cont’d N-Channel V(BÇDSS (A) Part Number >d s ( o n ) (Û ) V(BRJDSS r D S(O N ) Id (A) ( il) Part Number 650 5.8 1.5 VNT008D1 50 30 0.040 650 5.0 2.0 VNT009D1 50 25 0.060 BUZ11A1

6849a

Abstract: SC 200 T 2n7227
Contextual Info: T emic S e m i c o n d u c t o r s T0254 T0257 N-Channel Devices Military Faftk ‘ Î fi ? ''* r ' \.Vt' f i l V(BRiDSS<V) Hermetic Packages and Industry-Standard Military MOSFETs IRFML50 2N7075 2N7085 | 2N7085 | 2N7224 a IR FM I50 2N7081 2N7081 [RFM250

1N7001

Abstract: 1N7000 IXTP4N90 2N6660 2N6661 2N6755 IXTP4N80A IXTP7N45 IXTP7N45A IXTP7N50
Contextual Info: 271 - - M. % ¿ £ tt t Vd s or * Vdg h V € A £ të (Ta=25^C) Vg s (V) Id I gss Pd * /CH * /CH (A) (W) % 1 CnA) V g s th) I dss Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) (Ta=25tD) gfs Ciss Coss Crss <*typ) (max)

P-Channel Depletion-Mode

Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Contextual Info: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any

2n4441 transistor

Abstract: SML1004RGN IRFV360 semelaB irfy430 BUZ10 BUZ50 2N6661 BYV34 Series 2N4441 BYV29 Series
Contextual Info: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS M E TA L PA C K A G E S F O R N E W D E S I G N S TO257 TO254 TO258 TO267 Tabless Z-Tab Flexy-Lead P O W E R M O S F E T S , T R A N S I S T O R S , D I O D E S , V O L TA G E R E G U L AT O R S