9528 Search Results

IRF7478PBF

Abstract: 48V SMPS irf 1740 AN1001 EIA-541 F7101 IRF7101 smps 48v 12v
Contextual Info: PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: PD- 95286 IRF7469PbF SMPS MOSFET HEXFET Power MOSFET Applications l l l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Lead-Free Benefits

AN1001

Abstract: EIA-541 F7101 IRF7101
Contextual Info: PD - 95285 IRF7491PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on max 16m:@VGS = 10V 80V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

AN-1005

Contextual Info: PD - 95281 IRF7484PbF Typical Applications Relay replacement Anti-lock Braking System Air Bag Lead-Free l l l l HEXFET Power MOSFET VDSS RDS on max (mW) 40V 10@VGS = 7.0V ID 14A Benefits l l l l Advanced Process Technology Ultra Low On-Resistance Fast Switching

A001

Abstract: 9528
Contextual Info: MODEL NAUE: 9528 Rev. B Pin# 1 2 3 4 Assignment UP RIGHT DOWN LEFT SEE DETAIL "A" -136.4 ± 0 .3 ITO P E T -^ _ -137.0 ± 0.3 (B a ck er)- CONTACT SIDE r o STIFFENER -H NOTES: 1. 2. 3. 4. 5. 6. ITO GLASS THICKNESS: 1.1mm ITO GLASS THICKNESS : 1.10m m OVERALL THICKNESS : 1.40m m ± 0 .1 0

ic MARKING QG

Abstract: AN1001 EIA-541 F7101 IRF7101 95288 irf7495pbf MJ 73
Contextual Info: PD - 95288 IRF7495PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max ID 100V 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

PALC22V10B

Abstract: PALC22V10B-15PC 9439 95287 EME-6300H PLDC20RA10 7C322B 95426 7C322
Contextual Info: Qualification Report June, 1996 QTP# 95287, Version 1.0 CMOS PLD Marketing Part Description PALC22V10/B Reprogrammable CMOS PAL Device PLDC20G10/B CMOS Generic 24-pin Reprogrammable Logic Device PLDC20RA10 Reprogrammable Asynchronous CMOS Logic Device PAL is registered trademark of Monolithic Memories Inc.

xc3028

Abstract: xceive XC3028 Xceive DVB-T Tv tuner Diagram DVB-T DVB-T Tv tuner 9528 DVB-T Schematic DVB-T tuner diagram Digital TV receivers
Contextual Info: Product Brief Intel CE 9528 DVB-T TNIM Reference Design Consumer Electronics DVB-T Digital Terrestrial Front-end Solution with Xceive* Tuner • DVB-T set top boxes Intel® CE 9528 DVB-T Reference Design with Xceive* Tuner • DVB-T integrated digital TV

Contextual Info: 5 KST ms 6 a i 1 1 n "i » 5. KST M6 H I- H h Lj t—r Ì KST 12 _,M\ S T II IS K mr r 1 C_j 950337CX 00 9508230000 HM10h 10 15, , 1 KST “ f> ^ -L* sksc s r 8 T—r 9506940000 r Qj 9501320000 t— r 9506950000 t—r 9501330000 9528320000 Lo i—r 9506960000

AN1001

Abstract: EIA-541 F7101 IRF7101
Contextual Info: PD - 95287 IRF7492PbF HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

AN-1005

Contextual Info: PD - 95281A IRF7484PbF HEXFET Power MOSFET Typical Applications l Industrial Motor Drive VDSS RDS on max (mW) 40V Benefits l l l l l Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax. Lead-Free Description

9528110000

Abstract: KDKS1-PE-35 IEC 60947-1
Contextual Info: Product catalogue | Terminals | Screwing technology | SAK-series modular terminals | TS 35 | Polyamide PA 6.6 | Modular fuse terminals | 4 mm² General ordering data Order No. Part designation Version EAN Qty. 9528110000 KDKS 1/PE Initiator/actuator terminal, 4 mm², Screw

Contextual Info: PD - 95289 IRF7493PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

jSw Diode

Abstract: diode JSW jsw 44
Contextual Info: Dual Test-Disconnect Terminal Block W-Series WDTR 2.5 WDTR 2.5/WE Ä 'JsW | vs-/TPty, •; <: o Ordering Data Version - — Type — \ w A * -o P art No. Type Part No. B eige W ernid 952807 952809 B lue W e m id 952808 952810 Dimensions W id th /L e n g th /H e ig h t m m in.

ISD 1820 P

Abstract: AN1001 EIA-541 F7101 IRF7101
Contextual Info: PD - 95287A IRF7492PbF HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: Product catalogue | Terminals | Screwing technology | W-series modular terminals | Modular isolating terminals | WDT General ordering data Order No. Part designation Version EAN Qty. Product notes Product description Note, accessories 9528070000 WDTR 2.5 Disconnect and modular disconnect terminal, 2.5

Contextual Info: PD - 95284 IRF7490PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

AN1001

Abstract: EIA-541 F7101 3.7v transformer irf f7101
Contextual Info: PD - 95284 IRF7490PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

AN1001

Abstract: EIA-541 F7101 IRF7101
Contextual Info: PD - 95289 IRF7493PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Contextual Info: Product catalogue | Terminals | Screwing technology | W-series modular terminals | Modular isolating terminals | WDT General ordering data Order No. Part designation Version EAN Qty. Product notes Product description Note, accessories 9528080000 WDTR 2.5 BL

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IRF7495

Contextual Info: PD - 95288 IRF7495PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS on max ID 100V 22m @VGS = 10V 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

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Contextual Info: PD - 95283 IRF7488PbF HEXFET Power MOSFET Applications l l VDSS 80V High frequency DC-DC converters Lead-Free RDS on max 29mW@VGS=10V Benefits 1 8 S 2 7 S 3 6 4 5 S l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including