O254AA Search Results

TO3 RthJA

Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Contextual Info: PD - 93792C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)

spice models

Abstract: IRFM340 JANTX2N7221 JANTXV2N7221
Contextual Info: PD - 90490D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM340 JANTX2N7221 JANTXV2N7221 REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International

MIL-PRF-19500 schottky rectifier

Abstract: 35CGQ045
Contextual Info: PD -94298A 35CGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features The 35CGQ045 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated

JANSR2N7422

Abstract: IRHM9150 IRHM93150 JANSF2N7422
Contextual Info: PD - 90889C IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω ID -22A QPL Part Number

IRFMA450

Contextual Info: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

200X200

Abstract: 35SGQ045 c 1384
Contextual Info: PD -93963A 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ =125°C 0.79 V TJ,Tstg Operating and storage -55 to 150

bipolar transistor td tr ts tf

Abstract: IRF 260 N IRGMC30F
Contextual Info: PD -90714B IRGMC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

IRF5M3710

Abstract: isd 1740 4.5v to 100v input regulator
Contextual Info: PD - 94234 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3710 100V RDS(on) 0.03Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

12CGQ150

Contextual Info: PD -20359D 12CGQ150 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35A, 150V Description/Features The 12CGQ150 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated

7170 MOSFET

Abstract: IRHMS593260 IRHMS597260
Contextual Info: PD - 94605 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -32A -32A

mosfet motor dc 48v

Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Contextual Info: PD - 93792A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)

T0-254AA

Contextual Info: Case Outline and Dimensions - T0-254AA Standard & Low Ohmic 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665]

IRG4MC40U

Contextual Info: PD -94305 IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 3kHz - 40kHz, > 200kHz in Resonent Mode • High Operating Frequency

TRANSISTOR 545

Abstract: IRG4MC50U
Contextual Info: PD -94273 IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency

HFB35HB20

Contextual Info: PD - 94100 HFB35HB20 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF AV = 35A trr = 35ns Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An

IRHM9250

Abstract: IRHM93250 JANSF2N7423 JANSR2N7423
Contextual Info: PD - 91299C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9250 100K Rads (Si) IRHM93250 300K Rads (Si) RDS(on) I D

Contextual Info: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 90495G POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

Contextual Info: PD-97415 RADIATION HARDENED IRHMK57160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY ™ Product Summary Part Number IRHMK57160 IRHMK53160 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.013Ω 0.013Ω ID 45A* 45A* IRHMK54160

Contextual Info: PD - 90490D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM340 JANTX2N7221 JANTXV2N7221 REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 93880C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57260SE 100K Rads (Si) RDS(on) ID 0.049Ω 35A* TO-254AA International Rectifier’s R5 TM technology provides

IRHM57260SE

Contextual Info: PD - 93880C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57260SE 100K Rads (Si) RDS(on) ID 0.049Ω 35A* TO-254AA International Rectifier’s R5 TM technology provides

Contextual Info: PD-93963C 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Description/Features Major Ratings and Characteristics Characteristics 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ = 125°C 0.79 V TJ,Tstg Operating and storage -55 to 150

Contextual Info: PD-93963B 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Description/Features Major Ratings and Characteristics Characteristics 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ = 125°C 0.79 V TJ,Tstg Operating and storage -55 to 150