2N744 Search Results

2n4276

Contextual Info: N PN Transistors saturated switches Type No Case Sty •• V CIIO V, M,n V CEO 2N706 TO•18 25 15 2N708 TO·18 40 15 20 12 2N744 TO·18 2N753 TO·18 25 2NB34 TO·18 40 2N2369 TO·18 40 15 2N2369A TO·18 40 15 JAN2N2369A TO·18 40 15 JANTX2N2369A TO·18 40

n627

Abstract: AFAA TRANSISTOR MC 3041 TA1705 U028 2N744 1G21
Contextual Info: MILrS- 19500/273A NAVY 21 March 1566_ SUPERSEDING M IL-S-19500>^73(NAVY) 18 November 1063 (finn fi 9.\ v*“/ MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR TYPE TYPE 2N744 i SCOPE 1.1 D escription. - This specification covers the .detail-requirem ents for an NPN, silicon, high-speed

MIL-PRF-19500

Abstract: 2N7445T1 2N7445
Contextual Info: NOTICE OF CANCELLATION INCH-POUND MIL-PRF-19500/665 NOTICE 1 27 May 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE CHARACTERIZATION ONLY TRANSISTOR, P-CHANNEL SILICON TYPE 2N7445T1 JANSD, R MIL-PRF-19500/665, dated 30 August 1999, is hereby canceled without replacement.

2n3052

Abstract: 2n706 transistor 2N744 2n708 Transistor 2N708
Contextual Info: TYPE 2N3052 DUAL N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 7 4 2 3 6 , A U G U S T 1 9 6 3 - R E V I S E D A P R IL Î 9 6 7 DESIGNED FOR MINIATURIZED APPLICATIONS REQUIRING DEVICES SIMILAR TO 2N706, 2N708, 2N744, 2N753, 2N834, 2N914, ETC. •

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N22A

Abstract: 2N4271 2N3947 2N3326 2N3666
Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

A154

Abstract: GI3643 ST01 T0106 T018 bsw35 2N744 POWER DISS
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

MA7805

Abstract: ME214 OC740
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2sc113

Abstract: STE401 A154 GI3643 ST01 T0106 T018
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

2N5057

Abstract: JAN2N706A 2n5456
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (toff ) ns @ IQ 2N834 M AX mA @ *C MIN - M A X mA TC 25°C MHz pF Ta 25°C mA MIN M AX mW W Package Complement 0.25 @ 10 350 4.0 300 1.0 TO-18 2N2894A

BSW33

Abstract: TIS52 BSW34 BSW35 pem 81 2SA372 A3T3011 V723 PEP8 CS2218
Contextual Info: SYMBOLS & CODES EXPLAINED S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N L IN E No. T Y P E No. ▼ — New Type + — Revised Specifications # N o n - JE D E C type manufactured outside u :s .a . t Sw itching type, also listed in Section 12

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

MRF9331

Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/661D 17 April 2013 SUPERSEDING MIL-PRF-19500/661C 7 August 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

JANKCAR2N7389

Abstract: 2N7426 IRHC7360SE JANKCAF2N7389 IRHC9Y130 JANKCAR2N7268 2n7391 2n7425 JANKCAR2N7261 2n7389
Contextual Info: INCH-POUND MIL-PRF-19500/657A 22 February 2000 SUPERSEDING MIL-PRF-19500/657 23 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC This specification is approved for use by all Departments

2N7440

Abstract: MIL-PRF19500 c 3421 transistor 2N7441
Contextual Info: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. INCH-POUND MIL-PRF-19500/659 20 August 1998

PN2222A MOTOROLA

Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM