1G21 Search Results

Contextual Info: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris 1G21 Microcontroller D ATA SHE E T D S -LM 3S 1G21 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris 1G21 Microcontroller D ATA SHE E T D S -LM 3S 1G21 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

8Q transistor

Abstract: 8G89
Contextual Info: =;020; @>A>6FGD: =><= CBI:D D:?6J ;OLYZWOX X ihu JN@K:?@E> :8G89@C@KP X mB4 ;@<C<:KI@: JKI<E>K? b9<KN<<E :F@C 8E; :FEK8:KJc z@C< ,Ffryikklpi X 1F:B<KJ 8M8@C89C< X i zFID u di zFID v 8E; i zFID w :FE=@>LI8K@FEJ X 58J? K@>?K 8E; =CLO GIFF=<; KPG<J 8M8@C89C<

8Q transistor

Abstract: 1E 8J x30u
Contextual Info: =;020; @>A>6FGD: =><= CBI:D D:?6J ;OLYZWOX X ihu JN@K:?@E> :8G89@C@KP X mB4 ;@<C<:KI@: JKI<E>K? b9<KN<<E :F@C 8E; :FEK8:KJc z@C< ,Ffryikklpi X 1F:B<KJ 8M8@C89C< X i zFID u di zFID v 8E; i zFID w :FE=@>LI8K@FEJ X .C8JK@: J<8C<; 8E; =CLO GIFF=<; KPG<J 8M8@C89C<

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

1g22

Contextual Info: Internationa I Iö R Rectifier Part Number V BR CES (V) Government and Space Products V GE(th) V GE(th) min. max. (V) (V) ETSTyp. Loss Ic T,=25°C C (A) Tf =100°C (A) @ T| = 125°C TmJ) (A) h Max. Power Dissipation (W) Fax Case on Demand Outline Key Number

1N843

Abstract: 1N682 1N683 1N863 CI 4011 SJ 2036 1N643 1N662 1N663 IN862
Contextual Info: 26 August 1971 SUPERSEblNG M IL-S-18500/258B MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663 This specification la m andatory for use by a ll D epart­ m ents and Agencies of the D epartm ent d befense?"

n627

Abstract: AFAA TRANSISTOR MC 3041 TA1705 U028 2N744 1G21
Contextual Info: MILrS- 19500/273A NAVY 21 March 1566_ SUPERSEDING M IL-S-19500>^73(NAVY) 18 November 1063 (finn fi 9.\ v*“/ MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR TYPE TYPE 2N744 i SCOPE 1.1 D escription. - This specification covers the .detail-requirem ents for an NPN, silicon, high-speed

CD 1691 CB

Contextual Info: 1 111111111111111 1111111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 12345678499A51BCDCEFC1FB11111111111 1 11111111 1 11111 1 1 C12E 123314567891A758BCD814E1F3D167D1F1C5A36 CD1EE1977 !F"#$%&'1977 1 *2+,1)B1EE1"#$1CCDCB

CSM-88221D

Abstract: CSM-88221 2F-11 CSM-88211/88221
Contextual Info: inch | Outline Polarity mm Dot Diam eter Package 1D fi) s < to ~ 2 * Dot Pitch Device Super-bright Orange (E)/ Red (D) Am ber (A) Xp = 6 6 0 nm Yellow (Y)/Super Green (G )/ Device Bright Yellow (T) Bright Green (F) Package Xp = 635/610 nm Xp = 590/585 nm

Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 E1234567489ABCDEEFEFEEEEEEEEEEE E EEEEEEEE E E E1 123314567891A758BCD814E1F3D167D1F1C5A36 E !E"E#699 C$%&' E#699!E*B 1+,EBF!E-E%&EF