1N683 Search Results

Contextual Info: High Voltage Diodes - Formed Lead 0.75A - 2.00A • 30ns - 50ns • Hermetic Original Released: 05-03-07 Revised Date: 08-29-12 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number 1N6837LL 1N6838LL 1N6839LL Working Reverse Voltage Average Rectified

Contextual Info: 1N6836 1N6837 1N6838 1N6839 2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage Average Rectified Current

1N6837

Abstract: 1N6836 1N6838 1N6839
Contextual Info: 1N6836 1N6837 1N6838 1N6839 2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage Average Rectified Current

Contextual Info: 1N6836LL 1N6837LL 1N6838LL 1N6839LL 2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time FORMED LEAD HERMETICALLY SEALED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified

Contextual Info: 1N6836LL 1N6837LL 1N6838LL 1N6839LL 2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time FORMED LEAD HERMETICALLY SEALED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified

Contextual Info: High Voltage Diodes - Formed Lead 0.75A - 2.00A • 30ns - 50ns • Hermetic Original Released: 05-03-07 Revised Date: 08-29-12 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number 1N6837LL 1N6838LL 1N6839LL Working Reverse Voltage Average Rectified

1n6831

Abstract: 1N6826US 1N6826 MIL-PRF19500 1N6831US
Contextual Info: INCH-POUND MIL-PRF-19500/670 19 June 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments

1N6839LL

Abstract: 1N6836LL 1N6837LL 1N6838LL 1N6837
Contextual Info: 1N6836LL 1N6837LL 1N6838LL 1N6839LL 2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time FORMED LEAD HERMETICALLY SEALED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified

1N6836

Abstract: 1N6837 1N6838 1N6839
Contextual Info: 1N6836 1N6837 1N6838 1N6839 2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED 4 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage Average Rectified Current

1N6828

Abstract: 1N6833 1N6828U3 smd code marking pk oh 1N682 smd code 1426
Contextual Info: INCH-POUND MIL-PRF-19500/671 21 June 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6828, 1N6828R, 1N6833, 1N6833R, 1N6828U3 and 1N6833U3 JAN, JANTX, JANTXV, JANS This specification is approved for use by all Departments

1N6836LL

Abstract: 1N6837LL 1N6838LL 1N6839LL
Contextual Info: 1N6836LL 1N6837LL 1N6838LL 1N6839LL 2,000 V - 5,000 V Rectifiers 0.75 A - 2.00 A Forward Current 30 ns - 50 ns Recovery Time FORMED LEAD HERMETICALLY SEALED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: High Voltage Diodes - Formed Lead 0.75A - 2.00A • 30ns - 50ns • Hermetic ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm Forward Voltage Vrwm (Io) (Ir) (Vf) 55°C(1)

Contextual Info: 2,000 V - 5,000 V Rectifiers 0.5 A -1.5 A Forward Current 30 ns - 50 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Working Part Number Reverse Voltage Average Rectified Current Vrwm I Forward Voltage oo

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

M50FF3

Abstract: M100FF3 M100FF5 M160FF5 M50FF5 X100FF5 X150FF5 X20FF3 X20FF5 X50FF3
Contextual Info: Updated Data Sheet for the following Devices: • • M50FF3 M100FF3 • • • • X20FF3 X50FF3 X100FF3 X150FF3 • • • • X20FF5 X50FF5 X100FF5 X150FF5 • • • Z20FF3 Z50FF3 Z100FF3

M50FF3

Abstract: Ir 150F 150F M100FF3 M100FF5 M160FF5 M50FF5 Z100FF3 Z20FF3 Z50FF3
Contextual Info: High Voltage Diodes - Axial Lead 0.01A - 1.50A • 30ns - 50ns • Hermetic Original Released: 01-01-08 Revised Date: 04-24-09 ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Average Rectified Current Reverse Current @ Vrwm

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5