150F Search Results

Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted

REF25Z

Contextual Info: ZE TE X INC IS J> m c]T70S7fl 00□ bE□ b 1 95D 0 6 2 0 6 T - S 2 - 0 7 2 .5 V m icropower precision references REF25 REF25Z FEATURES • Low knee current - typically 40ftA • Ideal for battery operation - 150fiW • Internally shaped • REF25Z - 3 lead TO-92 plastic package

625Vcc

Contextual Info: CIM-150F11RV INEW ●電気的光学的特性 Electro-optical characteristics Item 電源電圧 Power supply voltage LEDA入力電圧 LEDA input voltage トランシーバー 通信レート Transceiver Communications rate 消費電流 Current drawn Power Down電流

151F2FM

Abstract: 151F3FM 150MLAB160 150FC15 150GC15 150JC15 150LC15 150LD11 B2000 150MLAB180
Contextual Info: 150FC15 150GC15 150JC 15 150LC15 150LD11 150LD13 150MLAB160 150MLAB180 15 0MLAB2 0 0 150MLAB2 50 150NC15 150ND13 150QC15 150QD13 150TD13 150YD13 151F1FM 151F2FM 151F3FM 1 5 1R1FM ¡ | , 1 y v V I I 151R2FM 151R3FM 153PJA 180 153PJA 200 153PJA250 153PJLA60

Contextual Info: DC1595 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz)8.2G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap.150f NR Max. Noise Figure Max. (dB)9.0

Contextual Info: MA4325AA1 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.150f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage48 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)1.5 Semiconductor MaterialSilicon Package StyleAxial-D

Contextual Info: VAP81EN19 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.150f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage5.5 Q Factor Min. f(co) Min. (Hz) Cut-off freq.300G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

ph meter circuit

Abstract: OP80G ph meter
Contextual Info: Ultra-Low Bias Current Operational Amplifier OP-80 ANALOG DEVICES FEATURES • Ultra-Low Bias Current: 300 femtoamps T y p .at +85°C 500 femtoamps T y p . at +125°C

Contextual Info: 2113 SERIES □upt in PIN HEADER 2.0mmX2.0mm 0.079"X0.079" Material: Housing: High te m p e ra tu re housing w ithstands IR and VPR soldering Contacts: Brass Plating: Gold plated: 5 /I Tin plated: m ethods. over 50/x nickel. over 70/1' nickel. 150fl' E lectrical C h aracteristics:

60175

Abstract: 150GC15 150JC15 150BC15 150DC15 150FC15 150LC15 150NC15 150QC15 tJ01
Contextual Info: 9097250 TOSHIBA STANDARD RECTIFIER ^ 150QC15 39C <D I S C R E T E /OPTO _ de | T 0 T 7 a s D 0 2 23 0 ]oaaa3 D a 1200V 150A MAXIMUM RATINGS C H A R A C T E R IS T IC RATING SY M B O L 150BC15 R epetitive Peak R everse Voltage 150DC15 200 150FC15 300 150GC15

Contextual Info: rm u yom O T Chip Multilayer Antenna Switch for PDC1.5 Temporary Model No. SHS-150F Measurement Circuit Shape & Size Tx<HI— I f I 20p <— H I- o R x ¡¿i F l I 100p a u n r 510 W o . Vc2 22p jo p Ant. l " v *1 condition Tx - A n t . ON A n t .- Rx ON

Contextual Info: InGaAsP/lnP LASER DIODE MODULE FLO 150F1BJ FEATURES • B it rate capability to 620 Mb/s • Span to 100 Km • Narrow spectral w idth DFB type structure due to distributed feed-back • Hermetically sealed 14 pin dual-in-line package w ith m o n itor photodiode, therm oelectric cooler, therm istor

Contextual Info: tnlDTTM^lnlO im U Chip Multilayer Antenna Switch with LPF for PDC1500 Model No. SHS-150FL Measurement Circuit TxoHI— I f r Ò 'b 1Q O P I / H I- o Rjc iS <D ’X * ’ > ni >\01 □ l2 0 — 51 Vc1o-^V— 100p 33n CM CO Vc2 N 4.5 . # * i It r i 1 1 1

HC Series

Contextual Info: DATASHEET HC SERIES ULTRACAPACITORS FEATURES AND BENEFITS* TYPICAL APPLICATIONS Up to 500,000 duty cycles or 10 year life Low internal resistance High power density 1F to 150F capacitance range -40o to 85o C operating temperature range Back-up power for cache-toflash applications

TOKO 5ccd

Abstract: 614AN-9681Z 614BN-9300Z 5ccd toko 5CCL 614AN-9101Z 5CCD 614AN-9221Z 614AN-9471Z 614BN-9100Z
Contextual Info: TYPE 5CCD 5CCL TYPE 5CCD 5CCL For Reflow Soldering Frequency Range: 0.1 -2MHz 0.1 -15MHz (High Frequency) Inductance Range: 1-1400|iH (1-700p.H) 1-330(xH (1-150fiH) (High Frequency) Temperature Coefficient: TC (L) 80±120ppm/°C (70±120ppm/°C) 140±120ppm/°C (120±120ppm/°C) (High Frequency)

1TT310

Abstract: tz425n16kof TT162N16KOF TT500N16 TT500N14KOF TT500 TT425N16 TT425N16KOF KM14 TT250N16KOF
Contextual Info: W1C - Schaltung Typenbezeichnung verst. Luftkühlung TA = 35°C SAP Bauelement KK Lüfter MB W1C 230 - 150F - KM14-1TT61N-LRCT W1C 230 - 225F - KM14-1TT106N-LRCT W1C 230 - 325F - KM14-1TT162N-LRCT W1C 230 - 430F - KM14-1TT250N-LRCT W1C 230 - 485F - KM14-1TT285N-LRCT

24-277VAC

Abstract: 30CA1Q FLA25
Contextual Info: 30C definite purpose contactors 30C Definite Purpose Contactor 20FLA - 150FLA Robust 1-4Pole Contactor Industry Standard Mounting Arc Covers as standard UL File No: E61703 RoHS Compliant Ordering Codes Type Contact material Contact number & arrangement Cover protection

Contextual Info: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. LCMA 185-10H 185r/150f F d b NOTES: 1. Material: High conductivity seamless copper tube. CERTIFIED LISTED Wire Connector 2. Plating: Parts are annealed and tin plated.

Contextual Info: MA4P158 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 60 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.2 @If (A)10m Ct{Cj} Nom. (F) Junction Cap.150f Carrier Lifetime (S)60n @I(F) (test) (A) @I(R) (A) (Test Condition)10m Maximum Operating Temp (øC)175

Contextual Info: DC1597 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap.150f NR Max. Noise Figure Max. (dB)8.0

Contextual Info: GC5511D30 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.150f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage6.0 Q Factor Min. f(co) Min. (Hz) Cut-off freq.350G P(D) Max. (W) Semiconductor MaterialGaAs Package StylePill-C

Contextual Info: VAP81EN10 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.150f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage5.5 Q Factor Min. f(co) Min. (Hz) Cut-off freq.325G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: SKKD 150F, SKMD 150F, SKND 150F 7+/ )77/ 897/+ : 44$  ' *'   ' '&     ) ) 89) : #3$  &  #;$< 3$ %1< = : 3! > #4$$ #4$$ Fast Diode Modules SKKD 150F SKMD 150F Units 89) &  #;$< = : ;3 #$$ > ##? @@  89+/ =*A : 43 >< #$ &

PJ 0519

Abstract: 150FC15 150GC15 150JC15 150LC15 150LD11 150LD13 150MLAB160 150MLAB180 150MLAB200
Contextual Info: 150G C 15 150FC 15 150JC 15 150LC 15 150LD 11 150LD 13 150M LA B 160 150M LA B 180 150N C 15 15 0MLAB2 0 0 1 50MLAB2 50 150Q D 13 150N D 13 150Q C 15 150TD 13 150Y D 13 151F1FM 151F2FM 151F3FM 1 5 1R 1FM 151R 2FM 151R 3FM 153P JA 180 153P JA 200 153P JLA 60