LS5907 Search Results

Contextual Info: LS5907 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5907 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications

Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted

S5908

Contextual Info: LINEAR SYSTEMS LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNELJFET Linear Integrated Systems F E A TU R E S LOW DRIFT I V GS1-2/ T I = 5 ^v /° c m a x - ULTRA LOW LEAKAGE LOWPINCHOFF I a = 150fA TYP. Vp= 2VTYP. ABSOLUTE MAXIMUM RATINGS S0TE1

Contextual Info: LINEAR SYSTEMS LS5905 LS5906 LS5907 LS59Q8 LS5909 tow LEAKAGE LOW DRIFT Linear Integrated Systems MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT 1 v g s i - 2 / T I = 5 p V /0C m a x . ULTRA LOW LEAKAGE L = 150fATYP. LOW PINCHOFF Vp= 2VTYP. G ABSOLUTE MAXIMUM RATINGS NOTE 1

Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT I VGS1-2/ T =5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted

Contextual Info: LS5907 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5907 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications

Contextual Info: LS5907 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The LS5907 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications

LS5905

Abstract: LS5906 LS5907 LS5908 LS5909 MONOLITHIC DUAL N-CHANNEL JFET
Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 150fA TYP. LOW PINCHOFF VP= 2V TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1

jfet transistor

Abstract: Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice ultra low Ciss jfet Dual PNP Transistor transistor j210 monolithic dual jfet transistor
Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 150fA TYP. LOW PINCHOFF VP= 2V TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

S5908

Contextual Info: LS5907 LS5908LS5909 LINEAR SYSTEMS LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW DRIFT |AVGS1 _2 /AT|= 5^V/°C max. ULTRA LOW LEAKAGE LG = 150fA TYP. Vp= 2V TYP. LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS MOTE 1

NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership