VGS12 Search Results

Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted

Contextual Info: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71

2n5248

Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Contextual Info: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640

Contextual Info: LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LS3N165, LS3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA=25°C unless otherwise noted)

Contextual Info: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF TO-78 TOP VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated

ultra low igss pA

Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1

Ultra High Input Impedance N-Channel JFET Amplifier

Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
Contextual Info: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1

"DUAL N-Channel JFET"

Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71

P-Channel Depletion Mode FET

Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
Contextual Info: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)

3N165

Abstract: 3N166
Contextual Info: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)

LSK186

Contextual Info: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate

Contextual Info: LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW NOISE en=8nV/Hz TYP. LOW LEAKAGE IG=10pA TYP. LOW DRIFT I VGS1-2/TI=5µV/ºC max. LOW OFFSET VOLTAGE IVGS1-2I=2mV TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C unless otherwise noted

20-28GHz

Contextual Info: CHA2092a 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

3N165

Abstract: 3N166 3N170 X3N165-66
Contextual Info: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)

LVG3131-PF

Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA93B/VG-S12-PF DATA SHEET DOC. NO : QW0905-L A93B/VG-S12-PF REV : A DATE : 27 - Oct. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. L A93B/VG-S12-PF

3N190

Abstract: 3N188 3N190-91 3N191 X3N190-91 C2506
Contextual Info: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)

ultra low Ciss jfet

Abstract: Photo Transistor d12 Dual N-Channel JFET 2n3955 transistor spice LS3954 J310 jfet ultra low igss pA ultra low igss pA mosfet transistor j201 transistor j112
Contextual Info: LS3954A LS3954 LS3955 LS3956 LS3958 LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. LOW LEAKAGE IG = 20pA TYP. LOW NOISE en= 10nV/√Hz TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

ALD1101MA

Abstract: 1101a 1101B
Contextual Info: ADVANCED LINEAR DEVICES I " m \ S3E D • DESbQfi3 D000211 5^1 ■ A dvanced |/L J A LD 1101A /A L D 1101B /A L D 1101 d e vices D U A L N -C H A N N EL M A TCH ED M O S F E T P AIR GENERAL DESCRIPTION \ PIN CONFIGURATION The ALD 1101 is a monolithic dual N-channel matched transistor pair

2SK389

Abstract: lsk170 LSK389B 2SK389 equivalent LSK389 equivalent dss2 LSK389 LSK389C LSK389A
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71

Contextual Info: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance

3N188

Abstract: X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191
Contextual Info: CA LO GI C CORP 4ÖE ]> lflMM3E2 0 0 G 0 3 S M 3 • C G C h 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N188-3N191 'T Z 't- 'Z n FEATURES • • • • A B S O L U T E MAXIMUM RATING S T a - 25°C unless otherwise specified

Contextual Info: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT I VGS1-2/ T =5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted

U421 jfet

Contextual Info: U421, U422, U423, U424, U425, U426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µS MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted)

Contextual Info: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES VGS1-2/ T = 5µV/ºC max. ULTRA LOW DRIFT ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted