X3N190 Search Results

3N190

Abstract: 3N190-91 3N191 X3N190-91
Contextual Info: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)

3N190

Abstract: 3N188 3N190-91 3N191 X3N190-91 C2506
Contextual Info: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)

3N188

Abstract: X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191
Contextual Info: CA LO GI C CORP 4ÖE ]> lflMM3E2 0 0 G 0 3 S M 3 • C G C h 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N188-3N191 'T Z 't- 'Z n FEATURES • • • • A B S O L U T E MAXIMUM RATING S T a - 25°C unless otherwise specified

3N190

Contextual Info: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CO RP O RA TIO N 3N190/3N191 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)

3N188

Contextual Info: _| _ COIOOIC Dual P-Channel Enhancement Mode MOSFET . _ - _ _ CORPORATION 3N190/3N191 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)

Contextual Info: CALOGIC CORP MAE J> 1Ö4M322 00003SM 3 • C G C vJ 3N188-3N181 'T Z FEATURES • • • • l- 'Z I ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise specified Very High Input Impedance High Gate Breakdown 3N190-3N191 Zener Protected Gate 3N188-3N189