3N165 Search Results

Contextual Info: LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE 3N165, LS3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA=25°C unless otherwise noted)

P-Channel Depletion Mode FET

Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
Contextual Info: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)

3N165

Abstract: 3N166
Contextual Info: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)

3N165

Abstract: 3N166 3N170 X3N165-66
Contextual Info: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)

Contextual Info: 3N165. 3N166 LINEAR SYSTEMS MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE Linear integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA- 25°C unless otherwise noted)

Contextual Info: LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE 3N165, LS3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA=25°C unless otherwise noted)

Contextual Info: _| _ CQIOQIv Monolithic Dual P-Channel Enhancement Mode MOSFET M . General Purpose Amplifier ^ CORPORATION \ j 3N165/3N166 FEATURES A B S O L U T E M A X IM U M R A T IN G S Note 1 (Ta = 25°C unless otherwise specified) • V ery H igh Im pedan ce • H igh G ate B re ak d o w n

3N166

Abstract: 3N165 3N170
Contextual Info: 3N165, 3N166 Dual P-Channel Enhancem ent Mode _ MOS FET FEATURES • V ery High In put Impedance • High Gate Breakdown • Low Capacitance MAXIMUM RATINGS @ V gss Vqss (1 V qss V Gos Vqq Vq lD PD Tj T jtg Tl PIN CONFIGURATION 2 5 “C am bient unless noted)

Contextual Info: 3N165 P-CHANNEL MOSFET The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAXIMUM RATINGS1@ 25°C unless otherwise noted Maximum Temperatures The hermetically sealed TO-78 package is well suited

3N165

Abstract: 3N166
Contextual Info: G E SOLI» STATE □1 D E|3 fl7 S D fll T - GDI I d 17 3N165, 3N166 3N165, 3N166 Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Very High Impedance • High Gate Breakdown Drain-Source or Drain-Gate Voltage Note 2

Contextual Info: 3N165. 3N166. LINEAR SYSTEMS MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (Ta= 25°C unless otherwise noted)

M116 CALOGIC

Contextual Info: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 M OSFET'S lgss V gs t h r ds( on ) cr ss P/ N ( pA( m a x ) ) ( V( m ax) ( oh m ( m a x ) ) ( pf( m a x ) ) 3N163 - 10 -5 250 .7 3N164 - 10 -5 300 .7 3N165 - 10 -5 300

3N166

Abstract: 3N165 3N170 73Package
Contextual Info: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)

Contextual Info: 3N165. 3N166 LINEAR SYSTEMS MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IM PEDANCE HIGH GATE BREAKDOW N ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM R ATING S NQTÇ 1 (Ta= 25°C unless otherwise noted)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N4250

Abstract: 2N3565 IC LM331 2n3565 equivalent transistor CURRENT-TO-FREQUENCY 2N3565 pin pico amp meter lm331 IC LM331 cost of the ic 1N484
Contextual Info: Does an analog-to-digital converter cost you a lot if you need many bits of accuracy and dynamic range? Absolute accuracy better than 0.1% is likely to be expensive. But a capability for wide dynamic range can be quite inexpensive. Voltage-to-frequency V-to-F converters are becoming

3N165

Abstract: 3N166
Contextual Info: ^Ælitron [F>ßä E m J T r ©MMMi P -C H A N N E L E N H A N C E M E N T DUAL M O S FET Devices. Inc. CHIP IMUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .035" 0.889mm) It is advisable that:

J201 Replacement

Abstract: 2N5019 "direct replacement"
Contextual Info: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation

J201 spice

Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
Contextual Info: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated

Ultra High Input Impedance N-Channel JFET Amplifier

Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
Contextual Info: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1

"DUAL N-Channel JFET"

Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
Contextual Info: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71

"DUAL N-Channel JFET"

Abstract: ultra low igss pA J176 equivalent
Contextual Info: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures

FET U310

Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
Contextual Info: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW