1101A Search Results

Contextual Info: 1101A/1101A1/1101A51 256-Bit Fully Decoded Random Access Memories Distinctive Characteristics • 2 5 6 -b it fu lly d e c o d e d s ilic o n gate MOS s ta tic random a cce ss m em ories. • T y p ic a l a cce ss tim e : 650 ns Am 1101A1 850 ns Am 1101A

Contextual Info: / 1101A/1101A1 ' 256-Bit Fully Decoded Random Access Memories Distinctive Characteristic* • 256-bit fully decoded silicon gate M O S static random access memories. • Typical access time: 650 ns Amt101A1 850 ns 1101A • Chip select and O R tieable outputs allow easy ex­

ALD1101MA

Abstract: 1101a 1101B
Contextual Info: ADVANCED LINEAR DEVICES I " m \ S3E D • DESbQfi3 D000211 5^1 ■ A dvanced |/L J A LD 1101A /A L D 1101B /A L D 1101 d e vices D U A L N -C H A N N EL M A TCH ED M O S F E T P AIR GENERAL DESCRIPTION \ PIN CONFIGURATION The ALD 1101 is a monolithic dual N-channel matched transistor pair

2SC2734

Abstract: 2SC4264 2S*4264 DSA003637
Contextual Info: 2SC4264 Silicon NPN Epitaxial ADE-208-1101A Z 2nd. Edition Mar. 2001 Application VHF / UHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 2 Note: Marking is “GC”. 1. Emitter 2. Base 3. Collector 2SC4264 Absolute Maximum Ratings (Ta = 25°C)

2SC4264

Abstract: 2SC4264GCTR-E PTSP0003ZA-A
Contextual Info: 2SC4264 Silicon NPN Epitaxial REJ03G0721-0300 Previous ADE-208-1101A Rev.3.00 Aug.10.2005 Application VHF / UHF RF amplifier, Local oscillator, Mixer Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1

a51sc

Abstract: 1101A1 am9301 AM1101ADM Am1101A AM1101APC AM1101AIPC AMI CD I1101a
Contextual Info: 1101A/1101A1/1101A51 256-Bit Fully Decoded Random Access Memories Distinctive Characteristics C h ip se le ct and OR tie a b le o u tp u ts a llo w easy e x­ pa n sio n to la rg e m em ories. 100% re lia b ility a ssu ra n ce te s tin g in c o m p lia n c e w ith

C1101A

Abstract: PI101A amcc volta tir 101a 1100 CHIP RC ARRAY 101A1 Am9301
Contextual Info: I / 1101A/1101A1 ' 256-Bit Fully Decoded Random Access Memories Distinctive C h ara cteristic« • 256-bit fully decoded silicon gate M OS static random access memories. • Typical access time: 650 ns Am t 101A1 850 ns 1101A • Chip select and OR tieable outputs allow easy ex­

MS181A

Abstract: l101c 181C 0241a mg 1050
Contextual Info: LED Numeric Displays FEATURE MS161A M 0161A MG 161A M Y 16IA M S16IC M 0 1 6 IC MG 161C MY161C MS181A M 0181A MG18IA MY181A MS 181C M 0 1 8 IC M G 18IC MY181C MSI 101A MO 1101A M G 1 101A M Y 1 101A MS 1101C MOI 101C M G 1 101C MY110IC MS231A M 0231A M G 23IA

GE133

Abstract: cdva AT75C AT75C220 AT75C320 GT Plus Oncore "vector instructions" saturation FS Oncore
Contextual Info: Features • • • • • • • • • • • Fully Autonomous DSP System 16-bit Fixed-point OakDSPCore 24K x 16 of Uploadable Program RAM 16K x 16 of Data RAM 2K x 16 of X-RAM 2K x 16 of Y-RAM X-RAM and Y-RAM Accessible within the Same Cycle JTAG Interface Available on AT75C220 and AT75C320

transistor c5578

Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Contextual Info: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012

Tektronix 2245a

Abstract: 2M3866 s2 umi 250v 1a Tektronix 2246a s 2 umi 1A 130 degree 250V 2N2369 transistor pulse generator PNP TRANSISTOR 1A 60V s 2 umi 1A 250V LARE RTL 1000 AVS Ralph Morrison Wiley
Contextual Info: um A pplication Note 47 August 1991 TECHNOLOGY High Speed Amplifier Techniques A Designer's Companion for W ideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: STW82101B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +24.5 dBm – 2FRF-2FLO spurious rejection: 75 dBc ■ Noise figure: – NF: 9.5 dB ■ Conversion gain – CG: 8.5 dB ■ RF range: 695 MHz to 960 MHz

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

oak dsp opcodes

Abstract: cdva AT75C AT75C220 AT75C320 AT75C DSP Subsystem "vector instructions" saturation
Contextual Info: Features • • • • • • • • • • • Fully Autonomous DSP System 16-bit Fixed-point OakDSPCore 24K x 16 of Uploadable Program RAM 16K x 16 of Data RAM 2K x 16 of X-RAM 2K x 16 of Y-RAM X-RAM and Y-RAM Accessible within the Same Cycle JTAG Interface Available on AT75C220 and AT75C320

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

la 76805 volt on pin

Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Contextual Info: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4

1101AS-3R3M

Abstract: DEA4012CK EMK105BJ104KV MAX8625A PEC36SAAN
Contextual Info: 19-4153; Rev 2; 4/09 MAX8625A Evaluation Kit The MAX8625A evaluation kit EV kit is a fully assembled and tested PCB demonstrating the MAX8625A step-up/step-down switching regulator. The MAX8625A utilizes Maxim’s proprietary H-bridge topology* that provides seamless transitions through all converter

E45221

Abstract: UL E45221
Contextual Info: A rco lectm c 1100 Series Push Button Switches ELECTRICAL RATINGS 0.125A 0.125A 0.125A 125 VAC 65C 45VDC 65C 125 VAC UL E45221 UL E45221 CSA LR10990 ENDURANCE ELECTRICAL 750,000 OPS AT 0.125A CONTACTS GOLD PLATED NEW NEW NEW Due to continuing developm ents consult factory for additional

JC JB jt

Contextual Info: STW82102B RF down converter with embedded integer-N synthesizer Preliminary data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 84 dBc ■ Noise figure: – NF: 10.4 dB ■ Conversion gain – CG: 8 dB ■ RF range: 1425 MHz to 1910 MHz

Contextual Info: STW82103B RF down converter with embedded integer-N synthesizer Datasheet −production data Features •High linearity: – IIP3: +25 dBm – 2FRF-2FLO spurious rejection: 80 dBc ■ Noise figure: – NF: 10.5 dB ■ Conversion gain – CG: 8 dB ■ RF range: 2300 MHz to 2700 MHz

Contextual Info: STW82101B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +24.5 dBm – 2FRF-2FLO spurious rejection: 75 dBc ■ Noise figure: – NF: 9.5 dB ■ Conversion gain – CG: 8.5 dB ■ RF range: 695 MHz to 960 MHz

Contextual Info: STW82102B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 85 dBc ■ Noise figure: – NF: 10.5 dB ■ Conversion gain – CG: 8 dB ■ RF range: 1425 MHz to 1910 MHz