101A1 Search Results

C1101A

Abstract: PI101A amcc volta tir 101a 1100 CHIP RC ARRAY 101A1 Am9301
Contextual Info: I / Am1101A/101A1 ' 256-Bit Fully Decoded Random Access Memories Distinctive C h ara cteristic« • 256-bit fully decoded silicon gate M OS static random access memories. • Typical access time: 650 ns Am t 101A1 850 ns Am1101A • Chip select and OR tieable outputs allow easy ex­

Contextual Info: TECHNICAL DATA SHEET FME 26S101-101A1 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H Interface N/A Documents Assembly instruction 51 I Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact Body Dielectric

Contextual Info: TECHNICAL DATA SHEET FME 26S101-101A1 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H Interface N/A Documents Assembly instruction 51 I Material and plating RF_35/12.04/3.0 Connector parts Center contact Outer contact Body Dielectric

Contextual Info: PCLH-101A1S,000 Product Details Powe r Plu g-in Re lays Previous [1] 2 3 4 5 . 20 Next Alway s EU RoHS compliant but not ELV Compliant Statement of Compliance Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products

N195PH12

Abstract: N086PH12 N0335SP120-160 N170PH12-16 N170PH12 N0131SP120-160 N0180SP120-160 N0290SP120-160 N0416SP020-080 N086PH12-16
Contextual Info: Old Part Number N086PH12-16 PDF Data Sheet Available RECTIFIER DEVICE - Phase Control Thyristors - Stud Types N VDRM VRRM Range IT AV at TSINK 25oC IT(RMS) at o TSINK 25 C New Part Number IT at TSINK 25oC Note 5 N0131SP120-160 ITSM(1) 10ms ITSM(2) 10ms VR ≤ 60%

Contextual Info: Am1101A/101A1/1101A51 256-Bit Fully Decoded Random Access Memories Distinctive Characteristics • 2 5 6 -b it fu lly d e c o d e d s ilic o n gate MOS s ta tic random a cce ss m em ories. • T y p ic a l a cce ss tim e : 650 ns Am 101A1 850 ns Am 1101A

VR1005BBA

Abstract: 0603TYPE VR1005A A120 A180 063ab VR1005CCA VR063
Contextual Info: 有关本公司产品的注意事项 请务必在使用本公司产品目录之前阅读。 注意事项 • 本软件中记载的内容是2009年10月现在的内容。本产品目录记载的内容由于产品的改良等原因发生变更时，恕不另行

VR063

Contextual Info: News Release 2009 年 9 月 30 日 太陽誘電：高静電気耐圧の 0603 サイズ積層チップバリスタを商品化 －重要性を増す小型携帯機器の静電気放電対策向けに最適－ 太陽誘電株式会社（代表取締役社長：神崎 芳郎本社：東京都台東区）は、小型・薄型化が

Contextual Info: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply

Contextual Info: / Am1101A/101A1 ' 256-Bit Fully Decoded Random Access Memories Distinctive Characteristic* • 256-bit fully decoded silicon gate M O S static random access memories. • Typical access time: 650 ns 101A1 850 ns Am1101A • Chip select and O R tieable outputs allow easy ex­

N060RH06-15

Abstract: N0089SR060-150 101A153 n060rh06
Contextual Info: Old Part Number N060RH06-15 PDF Data Sheet Available RECTIFIER DEVICE - Phase Control Thyristors - Medium Power Stud Types N VDRM VRRM Range New Part Number IT AV @ TCASE IT(RMS) at Tsink o (Note 3) N0089SR060-150 IT at Tsink o 25 C 25 C ITSM(1) ITSM(2) 10ms

WD7625LV

Abstract: 74HC04 ap 74273 multiplexer western digital 286 21SA1 104-D15 WD7625
Contextual Info: D • ^710220 0013GSÖ 134 HlilDC " T ^ 2- - ‘b ' b WD7625LV Address, Data, Hard Disk Buffers and Power Management Device 32S WESTERN DIGITAL 4 -0 S4E D ■ T71Ô22Ô QD13DST 070 H O C TABLE OF CONTENTS _. 52-3S Section Title 1.0 INTRODUCTION .

2001500

Abstract: N023RH N044 N370 N029R
Contextual Info: liase Type h y risto rs ~ S tu V DRMV RRM I tm a t' CASE Range ^T RMS IT (Note 5) (V) ^TSM(1) 10ms I tSM(2) 10ms Vñ=s60% u RRM (Note 1) V R^ 10V r1t (2) di/dt NonRep/Rep (A) (°C) (A) (A) (A) (A) (Note 1) (A2s) (Note 4) (A/us) (85) 40 40 210 240 290 400/200

P036RH02-12

Abstract: P042RH02-06 125OC
Contextual Info: PDF Data Sheet Available Old Part Number ITMS 1 VDRM VRRM Turn-off Time Tq 10ms VR ITAV TCASE IT(RMS) at IT at TCASE ≤ 60% at 200V/µ µs Range VRRM TCASE 25oC 55oC 25oC New Part Number ITMS(2) 10ms VR ≤ 10V Note 1 I2t (2) 10ms Qra 50% Chord 125oC Typ

N370MHX

Abstract: 101A153
Contextual Info: Phase Control Thyristors ~ Stud & flat base types Type Vw DR M VV R RM Ij RMS AVI Range a t' It CASE I ts M(1) I t SM(2) F t (2) di/dt 10ms 10ms Non- VR=s60% VR=s10V Rep/Rep V RRM (Note 1) (Note 1) (Note 4) (V) (A) (°C) (A) (A) (A) (A) (A2s) (A/ms) (Note 5)

134PC

Abstract: WD7625 35S-D wd76 91-D3 western digital paradise
Contextual Info: SHE D • ^710220 GQ1573b 724 « O C •n rs ^ -3 b WD7625LP Address, D ata, Hard D isk Buffers and Pow er Management Device gg WESTERN DIGITAL A WESTERN D I G I T A L 54E CORP D T71Ô EEÔ 0015737 bbO H lilD C T -52-38 Copyright 1992 Western Digital Corporation

n370sh

Abstract: N200CH N0633NC N1114LS N280SH12-16 N370sH12 n600sh12-16 N3022ZC160 n1042ls N0392WC
Contextual Info: Old Part Number PDF Data Sheet Available RECTIFIER DEVICE - Phase Control Thyristors - Capsule Types VDRM VRRM Range New Part Number IT AV @ Tsink o 55 C ITSM(1) ITSM(2) 10ms I2t(2) 10ms 10ms VR o VR ≤ 10V 25 C £10V ≤ 60% VRRM IT(RMS) @ Tsink VR di/dt Non

LDB20

Abstract: LDB25C E15a ldc25b LDB20C LDB25 ldc20b
Contextual Info: ^ 1 MICROWAVE PRODUCTS m u R n tn Isolator/Circulator/Hybrid Coupler/Hybrid Baiun Ilsolators/Circulators F re q u e n c y R a n g e S e r ie s 1 925- '1 0 'q C E 0 73 Series In s e rtio n Los s j Is o la tio n ! P o w e r R a tin g d B | (d B ) I (W ) (M H z )

VR1005BBA

Abstract: VR105C CP 1005 A120 A180 VR1005CCA ESD1005 063ab
Contextual Info: 当社製品に関するお断り 当社製品をご使用頂く際には事前に必ずお読み下さい。 注 意 • 当カタログの記載内容は2009年10月現在のものです。記載内容は改良などのために予告なく変更することがあります。従いま

Contextual Info: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply

Contextual Info: Notice for TAIYO YUDEN products Please read this notice before using the TAIYO YUDEN products. REMINDERS • Product information in this catalog is as of October 2011. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the latest information carefully before practical application or usage of the Products.

bfl5

Contextual Info: b3E i> WM 4 5 5 1 0 7 2 0ÜÜ1Q72 HONEYl i l ELL/ S 220 HH0N3 Honeywell S E C Advance Information TEST-BUS INTERFACE UNIT HTIU2100 FEATURES • Module Test and Maintenance Bus Interface - IEEE P1149.5 Compatible Backplane - Master or Slave Operation - Module Clock Generation Capability

Contextual Info: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply

dale 103G

Abstract: 82082R resistor dale 1 103g 681j 2kv R47 DALE AD1885 application note dale 1 103g RJ11 4pin sj2 diode zener AD1885
Contextual Info: ADSP-2191 EZ-KIT Lite Evaluation System Manual Revision 2.1, October 2003 Part Number 82-000535-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2003 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written