1N682 Search Results

Contextual Info: SENSITRON SEMICONDUCTOR 1N6824-1 1N6824UR-1 TECHNICAL DATA DATASHEET: 320, REV. D ULTRA LOW REVERSE LEAKAGE SCHOTTKY RECTIFIER Very Low Forward Voltage Drop 1A, 100 V Schottky Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

MSASC150

Abstract: MSASC150W45LR 1N6822 1N6822R IR100 MSASC150W45L VF10 VF11 VF13 IR125
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6822 (MSASC150W45L) Features • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

1N6761-1

Abstract: 1N6824UR-1 DO-213AB melf switching diodes
Contextual Info: 1N6761-1/N6761UR-1 1N6824-1/1N6824UR-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4244, Rev- SCHOTTKY FAST SWITCHING DIODES Sensitron’s Power Semiconductor Products have been used in space, military and high-rel applications for more than 30 years. Our 100V Schottky fast switching diodes, 1N6761-1/UR-1 & 1N6824-1/UR-1, are available in both

MSC1036A

Abstract: msasc150w45l
Contextual Info: Micmsemi m m m Santa Ana, CA Progress Powered b y Technology m 1N6822 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC150W45L) 1N6822R Features Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents

Contextual Info: Micmsemi m m m Santa Ana, CA Progress Powered by Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6820 (MSASC75W1 OOF) Features ^ Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy c

ultra low forward voltage schottky diode

Abstract: ultra low forward drop schottky ultra low reverse current schottky ultra low drop forward voltage diode axial schottky diode 100V 1A
Contextual Info: SENSITRON SEMICONDUCTOR 1N6824-1 1N6824UR-1 TECHNICAL DATA DATASHEET: 320, REV. D ULTRA LOW REVERSE LEAKAGE SCHOTTKY RECTIFIER Very Low Forward Voltage Drop 1A, 100 V Schottky Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

594 ph

Abstract: transistor vf12 ana 650 VF11 VF12 MSASC150H45LR VF10 1N6821 1N6821R IR100
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6821 (MSASC150H45L) Features • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

ir125

Abstract: 555 VFC ana 650 VF12 1N6820 1N6820R MSASC75W100F MSASC75W100FR VF10 VF15
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6820 (MSASC75W100F) PRELIMINARY Features • • • • • • Tungsten schottky barrier for low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

Contextual Info: m m m Santa Ana, CA m M ic m s e m i Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6821 (MSASC150H45L) 1N6821R Features Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents

Contextual Info: Micmsemi m m m Santa Ana, CA m Progress Powered b y Technology 1N6823 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC150W100L) 1N6823R Features Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents

vf17

Abstract: MSC1028 VF22 1N6823 1N6823R IR100 MSASC150W100L MSASC150W100LR VF10 VF11
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6823 (MSASC150W100L) Features • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

1N6820

Abstract: 1N6820R MSASC75W100F MSASC75W100FR PS11 MSASC75W100FV IR125 555 VFC
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC75W100F (1N6820) Features • • • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for low leakage currents Guard ring protection for increased reverse energy capability

1n6831

Abstract: 1N6826US 1N6826 MIL-PRF19500 1N6831US
Contextual Info: INCH-POUND MIL-PRF-19500/670 19 June 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments

1N6821

Abstract: 1N6821R IR100 MSASC150H45L MSASC150H45LR VF10 VF11
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6821 (MSASC150H45L) Features • • • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N5822US JANTX

Abstract: 1n6864us 1n6822
Contextual Info: 1N5820US – 1N5822US and 1N6864US Available on commercial versions 3 Amp SQ-MELF Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/620 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION This series of 3 amp Schottky rectifiers are compact in their square MELF packaging for high

h16a

Abstract: lm2517 vogt transformer 575 vogt inductors X15V flyback transformer HR 420 stepup ferrite transformer 2KV vogt mo inductors vogt s 575 LM2577-ADJ step down
Contextual Info: LM1577/LM2577 Series N a t i o n a l S e m i c o n d u c t o r LM1577/LM2577 Series SIMPLE SWITCHER Step-Up Voltage Regulator General Description Features The LM1577/LM2577 are monolithic integrated circuits that provide all of the power and control functions for step-up

msc diode

Abstract: 2N2708 Sertech Labs mrf892 1N6815 Microsemi New MOSFETs MS1631 2N4033 "RF MOSFETs" 15KW
Contextual Info: Fall 1998/Winter 1999 conditioning ThinKey Package in Production Microsemi's Santa Ana division is now in production on a complete line of hermetic rectifiers. These devices are offered in the Microsemi patented ThinKey package with RθJC ratings as low as 0.2oC/W. Available in strap to

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

1n5819 trr

Abstract: 1N6824UR-1 SHD125634 1N5711-1 SHD116211 SHD116211B SHD116212 SHD116213 SHD116222 SHD116223
Contextual Info: SENSITRON Hermetic Schottky Selection Guide Sensitron • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 120-0606 Selection Guide Surface Mount Packages

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the