IR125 Search Results

3mm ir receiver

Abstract: led 940nm 3mm emission
Contextual Info: Technical Data Sheet 3mm Infrared LED , T-1 IR1254 Features ˙High reliability ˙High radiant intensity ˙Peak wavelength λp=940nm ˙2.54mm Lead spacing ˙Low forward voltage Descriptions ˙EVERLIGHT’S Infrared Emitting Diode IR1254 is a high intensity diode , molded in a blue transparent plastic

Radiall R125

Abstract: R282 271 K02252D R282
Contextual Info: TECHNICAL D A T A _ Page 1 / 2 IR125.174.000 RIGHT ANGLE PLUG CRIMP TYPE CABLE 2.6/50 D SMA series 0. 559 Hex .315 / f l a t s 0.516 13.1 50 NOMINAL IMPEDANCE 0-12.4 FREQUENCY RANGE CABLES :K02252D RD 316 GHz -65/+165 'c TEMPERATURE RATING V.S.W.R ft

R5F5631

Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
Contextual Info: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D

R5F51115AGFL

Abstract: R5F51113ADNF R5F51113ADFM
Contextual Info: Datasheet RX111 Group Renesas MCUs 32 MHz 32-bit RX MCUs, 50 DMIPS, up to 512 Kbytes of flash memory, USB 2.0 full-speed host/function/OTG, up to 6 comms channels, 12-bit A/D, 8-bit D/A, RTC R01DS0190EJ0120 Rev.1.20 Sep 29, 2014 Features • 32-bit RX CPU core

Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D

Contextual Info: Datasheet RX62T Group Renesas MCUs R01DS0096EJ0100 Rev.1.00 Apr 20, 2011 100-MHz 32-bit RX MCUs, FPU, 165 DMIPS, 12-bit ADC 3 S/H circuits, double data register, amplifier, comparator : two units, 10-bit ADC one unit, the three ADC units are capable of simultaneous 7-ch. sampling, 100-MHz PWM (two three-phase complementary

1N6815

Abstract: 1N6815R MSASC25H45K MSASC25H45KR MSC1032
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6815 (MSASC25H45K) Features • • • • • • Tungsten/Platinum schottky barrier for very low VF Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

k0225

Contextual Info: TECHNICAL D A T A _ 50 0-12.4 FREQUENCY RANGE X cn o + 1.15 2 SMA series CABLES :K02252D RD 316 GHz F GHz Maxi 0.15 VF(GHz) RF INSERTION LOSS dB Maxi VOLTAGE RATING 250 Veff Maxi DIELECTRIC WITHSTANDING VOLTAGE 750 Veff Mini 5000 INSULATION RESISTANCE

Contextual Info: Preliminary Data Sheet Specifications in this document are tentative and subject to change. RX210 Group Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 512-KB flash memory, 12-bit AD, 10-bit DA, ELC, MPC, RTC, up to 9 comms interfaces; incorporating functions for IEC60730 compliance

R01US0032EJ

Contextual Info: User’s Manual 32 Cover RX63T Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MX040-20 Features • • • • • • • PRELIMINARY Designed for applications with stringent profile restrictions Passivated mesa structure for very low leakage currents

R5F56218BNFP

Abstract: R5F562N8BNFP R5F56218 R5F56216 r5f562 RX621 ir234 IR247 sdc 7500 ir153
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MSASC150

Abstract: MSASC150W45LR 1N6822 1N6822R IR100 MSASC150W45L VF10 VF11 VF13 IR125
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6822 (MSASC150W45L) Features • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

1N6819

Abstract: 1N6819R MSASC75W45F MSASC75W45FR VF10 MSC1030
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6819 (MSASC75W45F) PRELIMINARY Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

Equivalent ana 650

Abstract: 1N6791 MSASC100W45H MSASC100W45HR
Contextual Info: MSASC100W45H 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC100W45HR Or 1N6791 Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

TC 14066

Abstract: c 4138 41023 4413 1N6705 1N6705R VF10 VF11 VF12 VF13
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6705 1N6705R Features • • • • PRELIMINARY 400 Volts 20 Amps 35 ns passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop

d 2499

Abstract: 9551 VF13 100 Amp current 1300 volt diode transistor vf12 1N6704 1N6704R VF10 VF11 VF12
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 1N6704 1N6704R Features • • • • PRELIMINARY 200 Volts 20 Amps 35 ns passivated mesa structure for very low leakage currents Epitaxial structure minimizes forward voltage drop

ana 650,

Abstract: MSASC100H45HR MSASC100H45H
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSASC100H45H MSASC100H45HR Features • • • • • • • • Tungsten/Platinum schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability

R5F521A8BGFP

Abstract: R5F521A8BDFP R5F521A6BGFP R5f521a8 PC052 9804H R5f521A8B R5F521A8BD
Contextual Info: Datasheet RX21A Group Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, 24-bit ΔΣ A/D Converter, up to 512-KB flash memory, IrDA, 10-bit A/D, 10-bit D/A, DEU, ELC, MPC, RTC; up to 9 comms interfaces R01DS0129EJ0100 Rev.1.00 Oct 24, 2012 Features • 32-bit RX CPU core

mpc 1488

Abstract: BCM 4334 bcm 4330 IRQ15 RX630 MOV rx630 harvard architecture block diagram PROCESSOR ALI 3329 NXP receiver 125KHz R01US0032EJ
Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

RX63N

Abstract: RX631 renesas tpu tcr S12AD C1B4 USB smartcard 199 P33K ir048 734F R5F5631ACDF
Contextual Info: Features Preliminary Specifications in this document are tentative and subject to change. RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0090 Rev.0.90 Dec 27, 2011 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface,

Renewal battery

Abstract: PROCESSOR ALI 3329 IR124 3156 SHARP 357 Hall sensors marking code D diode ir048 Power Diode 818 EB53 R5F5630BCDFC
Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series Preliminary Preliminary Specification This is a Preliminary specification and is subject to change. All information contained in these materials, including products and product specifications,

1N6711B

Abstract: VF10 VF11 VF12
Contextual Info: Santa Ana Division 1N6711B Surface Mount Rectifier PRELIMINARY 200 Volts 50 Amps 5 usec Features • • • • • • Passivated mesa structure for very low leakage currents Hermetically sealed, low profile ceramic surface mount power package Low package inductance