9551 Search Results

A6T Diode

Abstract: diode A6t Diode GP 641 a6t gd IRFR3710ZPBF a6t 69 marking a6t IRFU3710Z
Contextual Info: PD - 95513C AUTOMOTIVE MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF

035H

Abstract: IRFPE30 50V 10A ultra fast diode
Contextual Info: PD - 95515 IRFP150VPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description

Contextual Info: GaAs Schottky Diode Antiparallel Pair Technical Data HSCH-9551 Features • Low Junction Capacitance— typically 40 fF • Low Series Resistance— typically 3 Ω • Large Bond Pads Suitable for Wire-bond or Flip-chip Assembly • Polyimide Scratch Protection

Contextual Info: PD - 95511 IRFR3505PbF IRFU3505PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V

IRFR3518

Abstract: AN1001 EIA-541 IRFR120 IRFU120 IRFU3518
Contextual Info: PD - 95510A IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

U3710

Abstract: IRFR3710Z IRFU3710Z IRFR3710
Contextual Info: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

USART 8251

Abstract: 8251 pin diagram 8251 microprocessor block diagram block diagram 8251 J941 8251 pin configuration of 8251 teradyne 8251 programmable interface 8251 usart
Contextual Info: 8251/A m 9551 Programmable Communication Interface ¡APX86 Family M ILITARY IN FO R M A TIO N Separate control and transmit register input buffers Synchronous or asynchronous serial data transfer Parity, overrun, and framing errors detected Half- or full-duplex signaling

IRF 1640

Abstract: IRFR3410 IRFR3410PbF IRF 1640 G IRF 260 N U120 AN1001 IRFR120 IRFU120 IRFU3410
Contextual Info: PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

95512

Abstract: 035H IRFPE30 MARKING 22A
Contextual Info: PD - 95512 IRFP3415PbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.042Ω G ID = 43A S Description Fifth Generation HEXFET® Power MOSFETs from

MOSFET IRF 380

Contextual Info: PD - 95516 IRFR3418PbF IRFU3418PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS RDS on Max 14m: 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

Contextual Info: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

Contextual Info: PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: PD - 95515 IRFP150VPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description

TH356LSM

Contextual Info: LC Filters for video equipment / 4FT / ##TH356LSM-9551 Page 1 of 1 Japanese English Chinese Global Home > Products Information > Products Catalog > LC filters for video equipment > 4FT > ##TH356LSM-9551 LC filters for video equipment ##TH356LSM-9551 Copyright C 2007 TOKO Inc, All Rights Reserved.

91204

Abstract: 035H IRFPE30
Contextual Info: PD - 95517 SMPS MOSFET IRFP15N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 385mΩ

Contextual Info: PD - 95517 SMPS MOSFET IRFP15N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 385mΩ

Contextual Info: PD - 95510 IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

IRFU3505

Abstract: IRFR3505
Contextual Info: PD - 95511A IRFR3505PbF IRFU3505PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V

R/tda 9551

Contextual Info: W hnt H E W L E T T WL'EM PA C K A R D GaAs Schottky Diode Antiparallel Pair Technical Data HSCH-9551 Features ItllllltlPl • Low Ju n ction C apacitance — typ ically 40 fF • Low S eries R esistan ce — typ ically 3 Q. • Large B ond Pads S uitab le

Contextual Info: PD - 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free HEXFET Power MOSFET

IRF P CHANNEL MOSFET

Abstract: IRF P CHANNEL MOSFET 100v IRFR3710Z IRFU3710Z
Contextual Info: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

IRFR3518

Abstract: AN1001 EIA-541 IRFR120 IRFU120 IRFU3518 IRFR3518PBF
Contextual Info: PD - 95510A IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: PD - 95511B IRFR3505PbF IRFU3505PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 0.013Ω

035H

Abstract: IRFPE30
Contextual Info: PD - 95515 IRFP150VPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description