5514A Search Results

TC5514

Abstract: TC5514AP-2 5514AP TC5514AP-3 2114 static ram TC5514APL-2 TC5514AP 5514a TC5514AP2 TC5514AP3
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 1 , 0 2 4 WORD X 4 SILICON GATE CMOS TC 5514AP-2/-CÉ TC 5514A P L-2/-3 BIT CMOS STATIC RAM DESCRIPTION The T C 55 14 A P is a 4 , 0 9 6 bit high speed and lo w p ow er random access m em o ry organized as 1 ,0 2 4 w o rds by 4 bits using CM O S te c h n o lo g y , and o p er­

Contextual Info: For More Information Visit 3M Electric Utility Splicing Web Pages / Glossary of Splicing Terms.316 Cable Types for Splicing. 317-319

UL 486d

Contextual Info: For installations from 120 V to 1 kV, 3M offers several low voltage splice options, including 3M-developed cold shrink technology, heat shrink, resin and tape. 3M Low Voltage Splices are reliable in buried, overhead, indoor or outdoor applications. Section

TC5514APL-2

Abstract: TC5514 O2-A2 TC5514AP TC5514apl TC5514APL 2/3 5514AP TC5514AP-2 2114 static ram m*7777
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 5514AP-2/-3 5514APL-2/-3 1 ,024 WORD X 4 BIT CMOS STATIC RAM SILICON GATE C M O S DESCRIPTION battery operation and battery back up fo r no nvo latility are req uire d. F urtherm ore the T C 55 14 A P L g u a ra n ­ teed a standby cu rre n t equal to o r less than 1//A at