2N3418 Search Results

2N3421

Abstract: 2N3419 2N3420 1000C 2N3418 2N3418S 2N3419S 2N3420S
Contextual Info: TECHNICAL DATA 2N3418, S, JAN, TX, TXV 2N3419, S, JAN, TX, TXV 2N3420, S, JAN, TX, TXV 2N3421, S, JAN, TX, TXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/393 NPN SILICON MEDIUM-POWER TRANSISTOR 2N3418, 2N3419, 2N3420, 2N3421 TO- 5 MAXIMUM RATINGS Ratings

2N5415

Contextual Info: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N22A

Abstract: 2N4271 2N3947 2N3326 2N3666
Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N5251

Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
Contextual Info: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX

Contextual Info: 2N3418U4 thru 2N3421U4 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The

TRANSISTOR SE 135

Abstract: 11C1 diode p 2N3421
Contextual Info: General Semiconductor Industries, Inc. ' f e "11" Typical Device Types: 2N3418 - 2N3421, 2N4150 | DIODE & TRANSISTOR CHIPS nnAi u ui ItPfJ NPN T R A N S IS T O R C H IP 10 AMP Fast Switching Bonding Pad Areas Base 1 31 x 13.5 mils Front Metallization: Aluminum

Contextual Info: 2N3418+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)85 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200# I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0

2N3418

Abstract: 2N3419 tata ak 90 2N3420 2N3421 TIX3033 TNR*G TIX3034 TIX3035 TIX3036
Contextual Info: TYPES 2N3418, 2N3419, 2N3420, 2N3421 N-P-N EPITAXIAL PLANAR SILICON MEDIUM-POWER TRANSISTORS HIGH-FREQUENCY MEOIUM-POWER TRANSISTORS Formerly TIX3033, TIX3034, TIX3035, TIX3036 • High-Power Dissipationin TO-5 Package: 15 watts at Tc = 100‘ C • Low-Leakage Current:

2N3016

Abstract: 2N3419 TO61 package 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3017
Contextual Info: _10 a u l i i E LE C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES—Continued Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418

2N3419

Abstract: 2N3420 2N3418
Contextual Info: NPN Meduim Power Silicon Transistor 2N3418, 2N3419, 2N3420 & 2N3421 2N3418S, 2N3419S, 2N3420S & 2N3421S Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/393 • TO-5, TO-39 (TO-205AD) Package Maximum Ratings

2N3419

Contextual Info: 2N3418 thru 2N3421 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These

2N3421

Abstract: 2N3419 2N3420 2N3418 1000C 2N3419S 2N3420S 2N3421S
Contextual Info: TECHNICAL DATA NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Devices 2N3418 2N3814S Qualified Level 2N3419 2N3419S 2N3420 2N3420S JAN JANTX JANTXV 2N3421 2N3421S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2N3419

Abstract: 2N3421 2N3420 2N3418
Contextual Info: 2N3418 thru 2N3421 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These

Contextual Info: 2N3418U4 thru 2N3421U4 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The

BU606

Abstract: bu606d 2N5415
Contextual Info: EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 B U125 BU125S BUY47 BUY48 BUY49S BUY68 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3867 2N3868 2N4150 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4895 2N4896 2N4897 2N5152 2N5154 2N5336 2N5337 2N5338

2N3421

Abstract: 2N3420 JANTXV 2N3421 equivalent 2N3419
Contextual Info: 2N3418 thru 2N3421 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These

2N3016

Abstract: TO61 package TO111 package 2N3419 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986
Contextual Info: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No Case 2N2891 2N2892 TO-5 TO111 TO- 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419 JTX 2N3419 JTXV

2N3419

Abstract: 2N3418 c 3420 transistor 2N3420 2N3421
Contextual Info: 2N3418 2N3419 2N3420 2N3421 > ~ k , General ^ ^ ^ Semiconductor -3 Industries, Inc. NPN SILICON POWER TRANSISTORS DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR These NPN devices are designed for use in high speed switching and medium power amplifier applications. JAN, JAN TX, and JA N TXV devices to MIL-S-19500/393 are available. The latest

2N3418

Contextual Info: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N3418 APPLICATIONS: • • • Power Supply Pulse Amplifier High Frequency Power Switching FEATURES: • • • • • Meets MIL-S-19500/393 Collector-Base Voltage: up to 85V

2N2891

Abstract: 2N2985 2N3016 2N3419
Contextual Info: COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued D evice No C ase 2N2891 2N2892 TO-5 TO111 TO111 TO -5 T O -5 TO -5 TO -5 TO -5 STUD TO 61/1 TO-5 TO-5 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419

2N2891

Abstract: 2N3016 2N3419
Contextual Info: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued D evice No Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX

Contextual Info: 2N3418S+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)85 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3421S

Contextual Info: 2N3418S thru 2N3421S Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.