2N3867 Search Results
2N3867 Datasheets (62)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2N3867 | Central Semiconductor | Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=25min / fT(Hz)=80M / Pwr(W)=1 | Original | 20.74KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Continental Device India | PNP SILICON POWER SWITCHING TRANSISTOR, Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications, TO-39 | Original | 60.29KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Microsemi | PNP Switching Silicon Transistor | Original | 59.61KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Microsemi | Silicon PNP Power Transistors - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=25min / fT(Hz)=80M / Pwr(W)=1 | Original | 56.86KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Semelab | Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=25min / fT(Hz)=80M / Pwr(W)=1 | Original | 10.8KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | API Electronics | 5 Amps PNP Transistors | Scan | 235.22KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | API Electronics | 5 AMPS PNP Transistors | Scan | 235.21KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Central Semiconductor | PNP METAL CAN Transistors | Scan | 337.93KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Crimson Semiconductor | Transistor Selection Guide | Scan | 45KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Diode Transistor | Transistor Short Form Data | Scan | 54.79KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | General Diode | Transistor Selection Guide | Scan | 608.68KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | General Transistor | Power Transistor Selection Guide | Scan | 401.54KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Motorola | Motorola Semiconductor Datasheet Library | Scan | 228.34KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Motorola | Motorola Semiconductor Data & Cross Reference Book | Scan | 244.94KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 34.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | 87.49KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3867 | Unknown | Shortform Transistor PDF Datasheet | Short Form | 161.19KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3867 Price and Stock
VPT Components JANTX2N3867JANTX2N3867 - Bulk (Alt: JANTX2N3867) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JANTX2N3867 | Bulk | 26 Weeks | 64 |
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JANTX2N3867 | EDWF | 35 |
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Central Semiconductor Corp 2N3867- Boxed Product (Development Kits) (Alt: 2N3867) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3867 | Box | 500 |
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Microchip Technology Inc 2N3867- Bulk (Alt: 2N3867) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3867 | Bulk | 48 Weeks | 100 |
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2N3867 | Bulk | 500 |
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2N3867 | 426 | 48 Weeks |
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2N3867 | 49 Weeks | 1 |
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2N3867 | 6,886 |
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Microchip Technology Inc 2N3867U4Transistor BJT PNP 40V 3A 3-Pin U4 - Bulk (Alt: 2N3867U4) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3867U4 | Bulk | 50 Weeks | 100 |
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Microchip Technology Inc JANTXV2N3867U4Trans GP BJT PNP 40V 3A 3-Pin SMD - Bulk (Alt: JANTXV2N3867U4) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JANTXV2N3867U4 | Bulk | 50 Weeks | 100 |
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2N3867 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2N3868
Abstract: 2N3867S 2N3867 2N3868S JTX 2N3867 2N3868S JAN
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Original |
2n38672n3867s2n38682n3868s+3 | |
2N3867Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS |
Original |
2n3867c-1202n3867rev060402e | |
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Contextual Info: <Se.rn.i- Conductor £Ptoducts., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE\.'07081 2N3719. 2N3720 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS |
Original |
2n37192n37202n38672n3868+2 | |
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Contextual Info: 2N3867 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021) |
Original |
2n3867o205ad17-jul-02 | |
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Contextual Info: 2N3867 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021) |
Original |
2n3867o205ad19-jun-02 | |
2N5415Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25 |
OCR Scan |
o-39/to-52n38672n38682n4930+5 | |
ic 23721
Abstract: 23732 23721
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OCR Scan |
jantxv2n3763jantxv2n3763l2n41262n3906+9 | |
741 IC
Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
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OCR Scan |
o-39/to-52n38672n38682n4930+10 | |
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Contextual Info: PNP SWITCHING SILICON TRANSISTOR 2N3867SMD05 • High Voltage • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated |
Original |
2n3867smd05smd05o-276aa | |
2N3867Contextual Info: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N3867 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • • • • Collector-Emitter Sustaining Voltage: VCEO(sus) = - 40 Vdc (Min) |
Original |
2n3867msc1059 | |
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Contextual Info: 2N3867S+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)200þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.75 @I(C) (A) (Test Condition)1.5 |
Original |
2n3867stime65n | |
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Contextual Info: 2N3867+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5 |
Original |
2n3867freq60mtime60n | |
2N4927
Abstract: 2N5415
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OCR Scan |
2n37432n38672n38682n4930+8 | |
2N3867SMD
Abstract: 2N3867S
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Original |
2n3867smdo276ab15-aug-022n3867s | |
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Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L- 000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications |
Original |
2n3867c-1202n3867rev060402e | |
BU606
Abstract: bu606d 2N5415
|
OCR Scan |
bfx34bss44bsw67bsw68+9 | |
2N3867Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS |
Original |
iso/ts169492n3867c-1202n3867rev060402e | |
2N3868
Abstract: 2n3867 2N3868S 2N3868S JANTXV 2N3867S 2N3868SJAN
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Original |
mil-prf-19500/3502n38672n3867s2n3868+3 | |
2N3183
Abstract: 2N3184 2N3185 2N3195 2N3196 2N3198 2N3203
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OCR Scan |
2n31712n31722n31732n3174+11 | |
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Contextual Info: 2N3867 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5 |
Original |
2n3867freq60mtime60n | |
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Contextual Info: 2N3867+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5 |
Original |
2n3867freq60mtime60n | |
2H2904
Abstract: 2NI483-86
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OCR Scan |
2n3892n4242n1047a-50a2n1479-82+7 | |
2N3867Contextual Info: 2N3867 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021) |
Original |
2n3867o205ad1-aug-02 | |
SF1020
Abstract: 2N5000 2N5330 2n6324 2N3867 2N4300 2N4998 2N5152 2N5154 2N5334
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OCR Scan |
2n43002n4998o-1112n5000+10 | |