2N5286
Abstract: 2N3171 2N3172 2N3196 2N3173 2N3174 2N3184 2N3183 2n5601 TO111 package
Contextual Info: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204
|
OCR Scan
|
2n31712n31722n31732n3174+102n31752n31762n31772n317s2n31832n31842n52862n31962n5601to111 package
|
PDF
|
|
Contextual Info: 2N3189 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
2n3189 |
PDF
|
2SB616 NEC
Abstract: B0952 SOT3323 6u60 2N3185 B0952F
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 20 25 30 35 40 50 60 70 80 200 200 140 140 200 200 400 400 200 200 2SA1469S 2SA1259 B0223 SML3705 SML3728 SML3777 SML3323 SML3327 2N3177 2N3181 2N3185 2N3189 2N3193 2N3197 SOT3723 SOT3723 SOT3723 SOT3731
|
Original
|
sol18o-220abo-220ot-186+8ot3303ot33232sb616 necb0952sot33236u602n3185b0952f
|
PDF
|
2N3173
Abstract: 2N3171 2N3172 2N3198 2N3185 2N5408 TO111 package 2N3174 2N3184 2N3183
Contextual Info: E s n E, LEC TR O N IC S, IN C . 1-13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204
|
OCR Scan
|
2n31712n31722n31732n3174+102n31752n31762n31772n317s2n31832n31842n31982n31852n5408to111 package
|
PDF
|
2N3183
Abstract: 2N3184 2N3185 2N3195 2N3196 2N3198 2N3203
Contextual Info: COLLECTOR CURRENT = 5 AMPS PNP TYPES— Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N3178 2N3183 2N3184 2N3185 2N318« 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204 2N3719 2N3720 2N3867 2N3868 2N4999
|
OCR Scan
|
2n31712n31722n31732n3174+112n31752n31762n31772n31782n31832n31842n31852n31952n31962n31982n3203
|
PDF
|
2n3183
Abstract: a/TO111
Contextual Info: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204
|
OCR Scan
|
2n31712n31722n31732n3174+72n31752n31762n31772n317s2n31832n3184a/to111
|
PDF
|
2N3186
Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1
|
Original
|
a4403ssdddd10112n21502n2151+72n26572n26582n2850-12n2851-12n2852-12n2853-12n3186
|
PDF
|
2N1718
Abstract: 2N1720 2N1714
Contextual Info: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050
|
Original
|
2n17182n17202n1714 |
PDF
|
JAN2N3996
Abstract: 2N4307 ISM22 2n3183
Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100
|
OCR Scan
|
jan2n39962n4307ism222n3183 |
PDF
|
MIL I 23659
Abstract: 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2n3198 transistor transistor 24405
Contextual Info: Microsemi PNP Transistors TIP42 TIP42A TIP42B TIP42C 2N6666 2N6667 2N6668 2N3171 2N3172 2N3173 2N3174 2N6049 2N3183 2N3195 2N3184 2N3196 2N3185 2N3197 2N3186 2N3198 2N6040 2N6041 2N6042 2N6489 2N6490 2N6491 2N3163 2N3164 2N3165 2N3166 2N3175 2N3187 2N317B
|
OCR Scan
|
o-220t0-220o-22cmil i 23659+92n31832n31842n31852n31862n31952n31962n31982n3198 transistortransistor 24405
|
PDF
|
AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
|
OCR Scan
|
trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
|
PDF
|
4116 2n
Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE
|
OCR Scan
|
2n12522n12532n15062n1506a+162n17142n17152n17162n17172ni7182n17194116 2nj 58042n3920tr j 58044116-2n2n36192n375n53392n28912n3442
|
PDF
|
2n3779
Abstract: 2N3190 SPP2218 2N3184 2N3185 2N3186 2N3196 2N3198 2N4388
Contextual Info: SPACE B - T t u j ^ ^ POWER ELECTRONICS J K A L C - PLJWER - E L E C T R O N I C S 89C D f. 00099 33'*/ Hi-Rel PLANAR POWER 2 AMP PNP BASE TO EMITTER SATURATION VOLTAGE FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T NORMALIZED E N G I N E E R I N G
|
Original
|
spp2215spp2216spp2217spp2218+14spp2219spp2220spp2221spp2222spp2223spp22242n37792n31902n31842n31852n31862n31962n31982n4388
|
PDF
|
|
Contextual Info: 8440355 SPACE POWER ELECTRONICS SPACE POWER ELECTRONICS , J " D -o/ 89C 00104 ST D E I A4403S5 ••DD1D4 1 30W@T =100°C C FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T Breakdown Voltages TYPE CASE 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026
|
Original
|
a4403s52n30212n30222n3023+62n30242n30252n30262n31632n31642n3165
|
PDF
|
|
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
|
PDF
|
MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
|
OCR Scan
|
mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
|
PDF
|
RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
|
OCR Scan
|
rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
|
PDF
|
Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
|
OCR Scan
|
thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241
|
PDF
|
transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
|
OCR Scan
|
an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
|
PDF
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
|
PDF
|
|
Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203
|
Original
|
qddd10s2n32022n32032n3204+62n37192n37202n37752n37762n37772n3778
|
PDF
|
2N3189
Abstract: 2N3186
Contextual Info: 8440355 SPACE POWER ELECTRONICS "'"""SPACE POWER ELECTRONICS 89C flT 00107 D 7 J 5 . E DF| 6440355 DDD01D7 Hi-Rel PLANAR P O W E R - 1 0 AMP WH TO-66 40W@T =100°C TO-5 5W@T =100°C o P TO-3 80W@T =100°C *A11 leads e l e c t r i c a l l y i s o l a t e d from case
|
Original
|
ddd01d72n17242n17252n2101+82n28112n28122n28132n28142n34452n34462n31892n3186
|
PDF
|
2N3021
Abstract: 2N3023 2N3025 2N3026 2N3022 2N3024 2N3053 2N3172 2N3171 2N3163
Contextual Info: BREAK D O W N V O LT A G E S PN P D EV IC E SAT V O L T A G E S M ax. hFE lc (A) Min. Max. (A) 'B (A) V CE (V) V BE (V) ic C A SE V CB V CE V EB V CE (V) 2N3021 TO-3 30 30 4 2 1 20 60 1 0.3 1.5 2 2N3022 TO-3 45 45 4 2 1 20 60 1 0.3 1.5 2 2N3023 TO-3 60 60
|
OCR Scan
|
2n30212n30222n30232n3024+82n30252n30262n30532n31632n31642n31652n31722n3171
|
PDF
|
7182N
Abstract: 2N2856 2n3920 n4877 2N567
Contextual Info: 3 E ìlìilE L E C T R O N IC S . IHC. DEVICE NUMBER INDEX DEVICE NO. 2N1252 2N 1253 2N1506 2N1506A 2 N 17 14 2N1715 2N 1 71 6 2 N 1717 2N 1 71 8 2N 1 71 9 2N 1 7 2 0 2N1721 2N 1724 2N 1 7 2 4 A 2N1725 2N 1 8 8 9 2N1890 2N1974 2 N 1975 2N 2 1 5 0 2N2151 2N 2 6 5 7
|
OCR Scan
|
2n12522n15062n1506a2n1715+112n17212n17252n18902n19742n21512n28117182n2n28562n3920n48772n567
|
PDF
|