2N1715 Search Results

2N1716

Abstract: 2N3738 2N3879 2N3767
Contextual Info: BIPOLAR bvceo VOLTS / T0-205 T° -5 ^ nr TO-213 (TO-66) ( •- 1m 4t} PEAK ■c AMPS hFE min/max < DEVICE TYPE < o m PACKAGE o NPN MESA POWER TRANSISTORS VCE (sat) max VOLTS ■c @ ' b A A 2N1714* 60 0.75 20 min 0.2/5.0 2.0 0.2/0.02 2N1715* 100 0.75 20 min

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

Contextual Info: 1 1 1 ESSOELECTRONICS, INC. PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES ì 1 ] ] ] 1 1 11 1 1 1 fl 1 1 Device No 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719 2N1720 2N1721 2N1B89 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989

2N1718

Abstract: 2N1720 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717
Contextual Info: Ü J iä ELECTRONICS, INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993

2n2019

Abstract: 2n2018 2N545
Contextual Info: Ic = t .0 AMPS bvceo PACKAGE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019 2N2150 2N2151 2N2987 2N2988 2N2989 2N2990 2N3262 2N3739 2N4000 2N4001

Contextual Info: Ú j ÍM E LE C T R O N IC S , INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992

2N3741A

Abstract: 2N3767
Contextual Info: BIPOLAR N P N PO W ER TR A N SIST O R S PEAK PACKAGE T O -205 TO-5 DEVICE VCE (sat) b v ceo «C hFE TYPE 2N 1714" VOLTS AMPS min/max 60 0.75 20 min 2N1715* 100 0.75 2N 17I6 2N1717* 60 0.75 100 0.75 T0213 *C @ VCE A V *C @ *B A A 0 .2 /5 .0 2.0 20 min 0 .2 /5 .0

2N1252

Abstract: 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719
Contextual Info: Ú j ÍM E LE C T R O N IC S , INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

2N545

Abstract: 2n1117 2N541 2N1052 2N1054 2N1055 2N1116 2N546 2N547 2N548
Contextual Info: S Û UA RE » CO/ G E N E R A L ôs a s s ü a 3918590 GENERAL SEMICONDUCTOR — / DEVICE TYPE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019

7182N

Abstract: 2N2856 2n3920 n4877 2N567
Contextual Info: 3 E ìlìilE L E C T R O N IC S . IHC. DEVICE NUMBER INDEX DEVICE NO. 2N1252 2N 1253 2N1506 2N1506A 2 N 17 14 2N1715 2N 1 71 6 2 N 1717 2N 1 71 8 2N 1 71 9 2N 1 7 2 0 2N1721 2N 1724 2N 1 7 2 4 A 2N1725 2N 1 8 8 9 2N1890 2N1974 2 N 1975 2N 2 1 5 0 2N2151 2N 2 6 5 7

Contextual Info: 2N1715+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)750m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)200m

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

n4300

Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
Contextual Info: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)

2N3440A

Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

KT601

Abstract: 2SC1708 2SC2675 kt601am 2SC2089BL KT601A 2SC3328Y LOW-POWER SILICON NPN SM-150 diode 2SC1627Y
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 >= 20 2S0438 2S0875 2SC3359 2SC3359 2SC1198K 2S01782K A 2S01782K (A) 2SC2061 ~~~~ ~ t~~ ~~g~~~~ 25 30 Rohm Corp Rohm Corp Rohm Co Ltd Indust Mexi NECElecslnc NEC Corp JA Sanken Elec Rohm Co Ltd ~anyo E!ect

AP1131

Abstract: 2N1720 2N1718 2n1482 2N2990 2N1479 2N1480 2N1481 2N1486 2N1700
Contextual Info: 0043592 A P I ELECTRON ICS INC 26C 00217 D _ _P A R A M E T E R T A B L E S A P I ELECTRONICS INC ' 2b dY ^ D O M B S T E □□□□217 E, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No Case v CBO Volts 2N1479 2N1480 2N1486

Contextual Info: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050

2n11

Abstract: 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1420 2N910 2N911
Contextual Info: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. VCB VCE Veb V V V min hFE at *c VC E max mA V V 10 10 . 10

2N1052

Abstract: 2N1445
Contextual Info: One, TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SWITCHING TRANSISTORS ( Ic = 1.0 AMPS D EVICt MCIO VOLTS BVCH VOLTS BVCK> VOLTS PD@1WC WATTS N Fi @ lc Mln. Mn. AMPS TYPE PACKAGE 2N545