2N1487 Search Results

transistor s71

Abstract: 2N1489 2N5671 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS 1*FE@ I f / V c E V c E (ja t) (min/max @ A/V) @ Ic^B (V @ A/A) p * r D WATTS fT (MHz) NPN 2N1487 40 6 15-45@1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4

2N1489

Abstract: 2N5686A 2N5929 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 sus VOLTS Ic (max) AMPS VcEO PACKAGE DEVICE TYPE ^FE@ I C/ V ce (min/max @ A/V) VcE(jat) @ (V @ A/A) pr D* WATTS fT (MHz) NPN 2N1487 40 6 15-45@1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4 3@1.5/.3

2N1489

Abstract: 2N1498 2N1487 2N1490 2N1488
Contextual Info: TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/208 Devices 2N1487 Qualified Level 2N1488 2N1489 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

O7703

Abstract: ic sj 2036 2N1489 2N1490 oc142 2N148B b961 2N1487 2N1488 Transistor 1967
Contextual Info: M IL -S -19500/208B Ü4 A ugust 1967 SUPERSEDING M IL -S - 19500/208A EL 23 O cto b e r 1964 (See 6. 2) M ILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, H IGH-POW ER TY PES 2N1487, 2N1488, 2N1489, AND 2N1490 T h is s p e c ific a tio n is m an d ato ry fo r u se by a ll D e p a rt­

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 sus VOLTS Ic (max) AMPS ^CEO PACKAGE DEVICE TYPE l*FE@ IC/ VCE (min/max @ A/V) VcE(sat) @ Ic^B (V @ A/A) p * WATTS fT (MHz) NPN 2N1487 40 6 15-45@ 1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4 3@1.5/.3

40411 transistor

Abstract: transistor 40411 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3771 2N3772
Contextual Info: un ic / m PNP •Ty p « * “7 ComplaHMnt V c e x tu t ic Volts) M ax (Mln-Max @ A/¥) 2N1487 2N1488 2N1489 2N1490 2N1702 40 55 40 55 40 6.0 6.0 6.0 6.0 5.0 15-45 @ 1.5/4 15-4501.5/4 25-7501.5/4 25-75 @ 1.5/4 15-60 @ .8/4 2N3442 2N4347 2N6262 140 120

2N1487

Abstract: 2N1489 2N1490 2N1488 2N1498
Contextual Info: TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/208 Devices 2N1487 Qualified Level 2N1488 2N1489 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

2N1487

Contextual Info: 2N1487 Si NPN Power BJT 9.01 Transistors Transistors Bipolar Si NPN Power Transisto. Page 1 of 1 Enter Your Part # Home Part Number: 2N1487 Online Store 2N1487 Diodes Si NPN Power BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N1489

Abstract: 2N1487 2N1488 2n1498
Contextual Info: Back to Bipolar Power Transistors TECHNICAL DATA 2N1487 JAN, JTX, JTXV 2N1488 JAN, JTX, JTXV 2N1489 JAN, JTX, JTXV 2N1490 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/208 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1487

2N3238

Abstract: 2N3233 2N3236 2N3239 2N3232 2N3240 2N3667 2N3863
Contextual Info: POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS Ic V V A V h FE MIN MAX Ic A ? VCE V Sat Test Voltages Conditions V a V bc Ic Ib la o V V A A ma 2N1069 50 60 45 9 4 10 50 1.5 4 3 4.5 1.5 .3 2N1070 50 60 45 9 4 10 50 1.5 4 1 4.5 1.5 .3 .100 2N1487

Contextual Info: 2N1487+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1487

Abstract: 2n1498 2N1489 2N1490 2N1488
Contextual Info: TECHNICAL DATA 2N1487 JAN, JTX, JTXV 2N1488 JAN, JTX, JTXV 2N1489 JAN, JTX, JTXV 2N1490 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/208 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1487 2N1498 2N1488 2N1490 Units VCEO

2N3055

Abstract: 2n3773 power Amplifier 2N3442 2N1487 2N1488 2N1489 2N1490 2N3232 2N3235 STC40251
Contextual Info: Silicon power transistors IlFE @ Ic/VCE Type# IS/b Vce sat ] @ Ic / I b VcEO|SUS| (Volts (Min-Max @ A/V) (V @ A/A) Vbe @ Ic:/V cf (V @ A/V) ICEV @ Vce (mA @ V) @ Vce Pd @ t — 11sec Tc = 25°C 0 J C (Watts) (°C/W) (A @ V) tO N fi (MHz) 2N1487 40 15-45@1.5/4

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

Contextual Info: m 2N1487 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N1487 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 MAXIMUM RATINGS V lc 6.0 A Ib 3.0 A ce SE A T N G PLAN t 40 V P diss 75 W @ Tc = 25 °C Tj -65 °C to +200 °C

Contextual Info: Microsemi 2N5468 2N5469 2N2811 2N2812 2N2813 2N 2814 2N6495 2N4231 2N4232A 2N4233 2N4233A 2N1487 2N1489 2N1702 2N1488 2N1490 2N6043 2N 6044 2N6045 2N6486 2N6487 2N6488 2N5731 2N5732 2N1209 2N1212 NPN ; 2N5970 2N4301 2N5264 2N7142 2N7143 2N5067 2N5068 2N5069

2N1487

Contextual Info: 2N1487 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N1487 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 6.o A Ib 3.o A 4o V O m le < MAXIMUM RATINGS P d is s 75 W @ Te $ 25 0C Tj -65 °C to +2oo 0C Tstg -65 0C to +2oo 0C

Contextual Info: 2N1487 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N5866

Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
Contextual Info: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75

Contextual Info: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC 2b D «7*^ 1 D eT| □□43512 0000SS7 1 | COLLECTOR CURRENT = 5 AMPS PNP TYPES - CONTINUED Device No AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088 AP1102 AP1103 AP1121 AP1135

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

transistor 40411

Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
Contextual Info: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.