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    2N3584 Search Results

    2N3584 Datasheets (60)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N3584
    Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 250V 2A TO-66 Original PDF 2
    2N3584
    Microsemi 5 Amp, 375V, High Voltage NPN Silicon Power Transistors - Pol=NPN / Pkg=TO66 / Vceo=250 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Original PDF 65.01KB 3
    2N3584
    Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=250 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Original PDF 10.73KB 1
    2N3584
    API Electronics Short form transistor data Short Form PDF 221.41KB 2
    2N3584
    API Electronics 5 Amp NPN Transistors Scan PDF 221.4KB 2
    2N3584
    API Electronics Short form transistor data Short Form PDF 56.12KB 1
    2N3584
    Boca Semiconductor COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS - Pol=NPN / Pkg=TO66 / Vceo=250 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Scan PDF 227.85KB 4
    2N3584
    Central Semiconductor BJT, NPN, Switching Transistor, IC 2A - Pol=NPN / Pkg=TO66 / Vceo=250 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Scan PDF 71.67KB 1
    2N3584
    Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF 85.47KB 1
    2N3584
    Diode Transistor Transistor Short Form Data - TO-3 Scan PDF 86.13KB 1
    2N3584
    Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF 106.13KB 2
    2N3584
    Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF 24.16KB 1
    2N3584
    Ferranti Semiconductors Power Transistors 1977 Scan PDF 23.29KB 1
    2N3584
    General Transistor Power Transistor Selection Guide Scan PDF 401.54KB 5
    2N3584
    Mospec POWER TRANSISTORS(35W) - Pol=NPN / Pkg=TO66 / Vceo=250 / Ic=2 / Hfe=25-100 / fT(Hz)=10M / Pwr(W)=35 Scan PDF 222.29KB 4
    2N3584
    Mospec Complementary Medium-Power High Voltage Power Transistor Scan PDF 222.28KB 4
    2N3584
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 82.36KB 1
    2N3584
    Motorola The European Selection Data Book 1976 Scan PDF 46.74KB 1
    2N3584
    Motorola European Master Selection Guide 1986 Scan PDF 42.83KB 1
    2N3584
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 348.16KB 9
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    2N3584 Price and Stock

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    VPT Components JANTX2N3584

    Single Bipolar Transistor, NPN, 250 V, 2 A, 35 W, TO-66, 2 Pins, Through Hole - Bulk (Alt: JANTX2N3584)
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    Avnet Americas JANTX2N3584 Bulk 1,826 1
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    TTI JANTX2N3584 EDWF 10
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    VPT Components JANTXV2N3584

    - Bulk (Alt: JANTXV2N3584)
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    Avnet Americas JANTXV2N3584 Bulk 18
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    TTI JANTXV2N3584 EDWF 10
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    VPT Components JAN2N3584

    JAN2N3584 - Bulk (Alt: JAN2N3584)
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    Avnet Americas JAN2N3584 Bulk 25
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    TTI JAN2N3584 EDWF 15
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    Central Semiconductor Corp 2N3584 TIN/LEAD

    Transistor GP BJT NPN 250V 2A 2-Pin TO-66 Sleeve (Alt: 2N3584 TIN/LEAD)
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    Avnet Americas 2N3584 TIN/LEAD 90
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    Microchip Technology Inc 2N3584

    250V 2A 2.5W Power Bjt Tht To-66; |Microchip Technology 2N3584
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    Newark 2N3584 Bulk 100
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    Microchip Technology Inc 2N3584 28 Weeks
    • 1 $37.63
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    2N3584 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3585

    Abstract: 2N3584 2N3584 JAN transistor 2n3584 MIL-PRF-19500/384
    Contextual Info: TECHNICAL DATA 2N3584 JAN, JTX, JTXV 2N3585 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/384 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


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    2n35842n3585mil-prf-19500/384o-213aa+22n3584 jantransistor 2n3584 PDF

    2N3584

    Abstract: 2N3584 JANTX
    Contextual Info: 2N3584 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    2n3584o213aa1-aug-022n3584 jantx PDF

    2n3441

    Abstract: 2N3442 2N3439 2N3440 2N3583 2N3584 2N3585
    Contextual Info: HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 TO-39 <2A Package •c V CE0 Volts 2N3440 250 2N3584 2N3585 300 2N3439 350 TABLE 5 - NPN HIGH VOLTAGE TRANSISTORS The transistors shown ¡n this table are characterised for high voltage operation in industrial, commercial


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    2n34412n34422n35832n3440+32n35842n35852n3439 PDF

    2N3584

    Contextual Info: 2N3584 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE TO - 66 2.0 A 250 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C


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    2n3584rad8-89 PDF

    2N3584

    Abstract: 2N3585 transistor 2n3584
    Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/384 Devices Qualified Level 2N3584 JAN JANTX JANTXV 2N3585 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current


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    mil-prf-19500/3842n35842n3585transistor 2n3584 PDF

    2N4240

    Abstract: 2N3583 2N3584 2N3585 2N6420 2N6421 2N6422 2N6423 2N6420-2N6421
    Contextual Info: COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS NPN 2N3583 2N3584 2N3585 2N4240 . designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,switching regulators,convertors, deflection stages and high fidelity amplifiers.


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    2n35832n64202n35842n6421+52n35852n64222n42402n64232n6420-2n6421 PDF

    200V transistor npn 10a

    Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
    Contextual Info: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER


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    2n35832n35842n3585500ma+6200ma100ma200v transistor npn 10atransistor 200v 100ma npn200v 10a npn transistor200v 100ma npn PDF

    npn transistor to-66

    Abstract: 2N3584A TRANSISTOR 751 2N3054A 2N3879A 2N3584 2n3767 2N3583 2N3738 2N3878
    Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 V ceo Ic DEVICE TYPE sus VOLTS (max) AMPS NPN TO-66 2N3054A 55 4 25-100@.5/4 2N3583 250h 2N3584A T ir ^ * Tc = 25UC h V»CER VcE(j»t) @ I c^Ib (V@ A/A) l*FE@ V V ce PACKAGE (min/max @ A/V) p • D*


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    2n3054a2n35832n3584a2n3585a+102n37382n3739a2n3766a2n3767a2n38782n3879anpn transistor to-66transistor 7512n35842n3767 PDF

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    2n30542n3054a2n35832n3584+72n35852n37382n37392n60492n64202n64212n3738 equivalent PDF

    2N3583

    Abstract: 2N4240 2N36 2N35
    Contextual Info: 2N3583 2N3584* 2N3585* 2N4240 *also available as i? t/V E sr JAN, JANTX, JANTXV HIGH-VOLTAGE SILICON N-P-N TRANSISTORS For High-speed Switching and Linear-Amplifier Applications Features • 100-percent tested to assure freedom from second breakdown in both forwardand reverse-bias conditions when operated within specified limits


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    2n35832n35842n35852n4240+3100-percent2n362n35 PDF

    2N3534

    Abstract: 2N3583 2N3584 2N3533 2N3563 2N3503 2N3585 2n358s N3584 2N3584 NPN
    Contextual Info: 2N3583 2N3584 2N3585 NPN SILICON HIGH VOLTAGE POWER TRANSISTORS 35 watts at 25°C 5A peak collector current OUTLINE DIMENSIONS mm TO-66 915 min. - — - — 1 90 max. 1 1 Î 12.65 max. 0.85 0.70 T — — 8 .64 max ABSOLUTE MAXIMUM RATINGS v cso Collector-base voltage {lE — 0)


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    2n35832n35842n35852n3503+82n3s842n358s2n35s32n35342n35332n3563n35842n3584 npn PDF

    2N3585

    Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 384 Devices Qualified Level 2N3584 JAN JANTX JANTXV 2N3585 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current


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    mil-prf-19500/2n35842n3585 PDF

    2N3584 TEXAS

    Abstract: TEXAS 2N3583 2n4240 37n50 2n3684
    Contextual Info: TYPES 2N3583, 2N3584, 2N3585, 2N4240 N-P-N SILICON POWER TRANSISTORS H IG H -V O LT A G E POWER TR AN SISTO RS D ESIG NED FOR IN D U S T R IA L A N D M IL IT A R Y APPLICATIO N S 20 GO H m c •< < r u ffiS B S gg • Min V B R C EO of 300 V (2N 3585, 2N 4240)


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    2n35832n35842n35852n4240+42n3584 texastexas 2n358337n502n3684 PDF

    2N3584

    Abstract: 2N3442 2N3583 2N3439 2N3440 2N3441 2N3585
    Contextual Info: HIGH VOLTAGE NPN HIGH V O LTA G E S E LE C T O R C H A R T TO -6 6 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 Package 'c TO-39 <2A V CEO Volts 250 2N3440 2N3584 2N3585 300 350 2N3439 TA B LE 5 - NPN HIGH V O LTA G E T R A N S IS T O R S The transistors shown in this table are characterised for high voltage operation in industrial,


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    2n34412n34422n35832n3440+42n35842n35852n343916ial PDF

    2n3583

    Abstract: 2N3585
    Contextual Info: 2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER


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    2n35832n35842n3585conditi200+1100ma PDF

    Contextual Info: 2N3584+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)250 V(BR)CBO (V)375 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2n3584freq10m PDF

    2N5428

    Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    2n30542n3054a2n35832n3584+72n35852n37382n37392n60492n64202n64212n5428 PDF

    2H2904

    Abstract: 2NI483-86
    Contextual Info: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879


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    2n3892n4242n1047a-50a2n1479-82+72ni483-862n1478-902k1714-2n17222n17242n20152h2904 PDF

    2N3584X

    Contextual Info: 2N3584X Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    2n3584xo213aa1-aug-02 PDF

    2N3584

    Abstract: 2N3585 2N3583 transistors 2n3585
    Contextual Info: NPN 2N3583 – 2N3584 – 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage IE= 0


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    2n35832n35842n3585transistors 2n3585 PDF

    ic1a

    Abstract: 2N3584 2N358 IC 1A 2N3584 inchange
    Contextual Info: Inchange Semiconductor Product Specification 2N3584 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25℃ ·VCE SAT =0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS ·High speed switching and linear amplification


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    2n3584ic1a2n358ic 1a+12n3584 inchange PDF

    2N372A

    Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
    Contextual Info: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665


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    2n35012n35062n35072n3508+13l/10m2n35092n351115min2n35712n372a2n36802n3809t0722n2979dcsm2n3734bfx81t052 PDF

    Contextual Info: PLESSEY SEMICOND/DISCRETE i 7220533 PLESSEY SEMICOND/DISCRETE DE~| 732D533 0G04C1S5 b | ~ 95D 04952 r-33-i/ HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 Package •c TO-39 <2A V C E0 Volts 2N3440 250 2N3584


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    732d5330g04c2n34412n3442+52n35832n34402n35842n35852n3439 PDF

    Contextual Info: 2N3584 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    2n3584o213aa30-jul-02 PDF