2N3439 Search Results

BU606D

Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
Contextual Info: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440

RCA413

Abstract: 2N5415 2N6079 RCA411 2N3439 2N3440 2N5840 2N6175 2N6177 2N6213
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

RCA 40313

Abstract: 40328 RCA411 40318 RCA 2N5415 2N6177 RCA 40373 2N3439 2N3440 40322
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

40322

Abstract: 40374 40373 40328 2N6263 2N3439 2N3441 2N6264 40318 TO-66
Contextual Info: fy = 15 MHz m in ;P j = 10 W max 2N3439 FAMILY [n-p-n] silicon [cont'd] DESCRIPTION V C E O '*usi h FE i/ i_ i «/ •C E R '1" * 1 * C E V » " * ' V V V 350 - - i •c w *C E A V •CEV- " nA r1_« _ V/ m p— . - Or* W V C E (sat) - V 1 1 ■c ■B ’ CE

2N5415

Abstract: 2N3055 RCA 2N3054 transistor BUX66C rca 2n3055 RCA 40250 2N3439 2N3440 rca transistor 508 2N6079
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

2n3441

Abstract: 2N3442 2N3439 2N3440 2N3583 2N3584 2N3585
Contextual Info: HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 TO-39 <2A Package •c V CE0 Volts 2N3440 250 2N3584 2N3585 300 2N3439 350 TABLE 5 - NPN HIGH VOLTAGE TRANSISTORS The transistors shown ¡n this table are characterised for high voltage operation in industrial, commercial

2N3055 RCA

Abstract: rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

2N244

Abstract: bfy5
Contextual Info: TO-39 METAL-CAN PACKAGE TRAN SISTO RS NPN Type No. tßO m Max VCB (V) hFE VCB0 VCEO VEBO (V) Min (V) Min (V) Min 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 lc •& VCE (mA) (V) Min Max (MA) (V) Max 0.75 15 10.0 1.00 200 30.000 10.0 50.000

cc 3053

Abstract: 2N3440U4
Contextual Info: 2N3439U4 thru 2N3440U4 Compliant NPN LOW POWER SILICON TRANSISTOR Qualified Levels: JAN, JANTX, JANTXV and JANS* Qualified per MIL-PRF-19500/368 *2N3440U4 only DESCRIPTION This family of 2N3439U4 through 2N3440U4 high-frequency, epitaxial planar transistors

2N5415

Contextual Info: N AUER PHILIPS/DISCRETE t. T E bbS3^31 0023138 OST 2N3439 2N3440 D IAPX SILICON NPN HIGH-VOLTAGE TRANSISTORS NPN high-voltage small-signal transistors in a TO-39 envelope and intended for use in telephony and professional communication equipment. Complementary type is 2N5415/5416.

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3439 (SILICON) NPN SILICON HIGIi VOLTAGE POWER TRANSISTORS 1 AMPERE POWER TRANSISTORS NPN SILICON . designed for use in consumer and industrial line-operated

2N5251

Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
Contextual Info: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX

2N3439 JANS

Contextual Info: 2N3439UA thru 2N3440UA Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of 2N3439UA through 2N3440UA high-frequency, epitaxial planar transistors

LCC3 weight

Abstract: TRANSISTOR 023 2N3439 2N3439CSM4 2N3440 2N3440CSM4
Contextual Info: 2N3439CSM4 2N3440CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13

2n3440

Abstract: 2N3439
Contextual Info: 2N3439 2N3440 SILICON NPN TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3439, 2N3440 are high voltage silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.

2N3439

Abstract: 2N3440
Contextual Info: Transys Electronics L I M I T E D NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 deg C unless otherwise specified DESCRIPTION

Contextual Info: IMI = l t = «= = ìvx = 2N3439DCSM 2N3440DCSM 5 E IVI E LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 2 .29 ± 0.20

Contextual Info: 2N3439 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)450 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)360 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)50m

2N3440

Abstract: 2N3439 2N3440L 2N3439L 2N3440 JAN
Contextual Info: TECHNICAL DATA 2N3439 JTX, JTXV 2N3439L JTX, JTXV 2N3440 JTX, JTXV 2N3440L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/368 NPN SILICON LOW-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N3439 2N3440 Units 350 450 250 300 Vdc Vdc Vdc Adc W W/0C

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

JAN2N5339

Abstract: JANTX2N4150 JANS2N3439
Contextual Info: Microsemi NPN Transistors Part Number JANTXV2N3440L 2N3439 2N3439L 2N3439 2N3439L 2N3439 2N3439S 2N3439 2N3439L 2N3439 2N3439L 2N1479 2N1481 2N1480 2N1482 2N2890 2N2891 2N4225 2N2983 2N2985 2N2984 2N2986 2N3017 2N4150 2N4150S

TEXAS 2N3439

Abstract: pf30n 2n3439 TEXAS INSTRUMENTS 2N3439
Contextual Info: TYPES 2N3439. 2N3440 N-P-N SILICON POWER TRANSISTORS HIGH-VOLTAGE POWER TRANSISTORS DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS CO H C < r *o r m m Vi • Min V BR CEO ° f 350 V (2N3439) • Max VcE(sat) of 0.5 V at lc = 50 mA 5i • Min f j of 15 MHz at 10 V , 20 mA

2N2201

Abstract: 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358 2N2008 2N3114 2N3498 2N3499 2N3500
Contextual Info: 8134693 SEMICQA NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Cont’d Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2K3501 2N4926 2N2726 2N2727 40412 2N4927 2N3440 2N5279 2N3439 2N5092 Electrical Characteristics @ 25°C Maximum Ratings

2N5415

Abstract: RCA411 BUX66C 2N3439 2N3440 2N5840 2N6079 2N6175 2N6177 2N6213
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 20 MHz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415