2N6264 Search Results

2N3441

Abstract: ic 6264 NS2N
Contextual Info: File Number 2N3441, 2N6263, 2N6264 529 Medium-Power Silicon N-P-N Transistors Rugged Devices for Interm ediate, Power Applications in Industrial and Com m ercial Equipm ent Features: T E R M IN A L D E S IG N A T IO N S 2 N 6 2 6 4 . p r e m iu m ty p e fr o m 2 N 3 4 4 1 fa m ily

2N6263

Abstract: 2N6264
Contextual Info: SavantIC Semiconductor Product Specification 2N6263 2N6264 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·A wide variety of medium-to-high power, high-voltage applications

2N6264

Contextual Info: 2N6264 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N3441

Abstract: VK 27 CT 2n6264
Contextual Info: File Number 2N3441, 2N6263, 2N6264 529 HARRIS SEMICOND SECTOR SbE D M3Q2271 D04Ü425 TT4 * H A S -T -3 3 -C D / Medium-Power Silicon N-P-N Transistors Rugged Devices for Intermediate, Power Applications in Industrial and Commercial Equipment Features: TERMINAL DESIGNATIONS

2N6263

Abstract: 2N6264
Contextual Info: Inchange Semiconductor Product Specification 2N6263 2N6264 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage ・Low collector saturation voltage APPLICATIONS ・A wide variety of medium-to-high power, high-voltage applications

Contextual Info: 2N6264 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N3441 RCA

Contextual Info: - G E SOLID STATE 3875081 ÔÏE~D~j| 3fl750fll 00173SS fl G E SOLID STATE 17355 0 1 E D J / w 3?“0? General-Purpose Power Transistors •File Number 529 2N3441, 2N6263, 2N6264 Medium-Power Silicon 'N-P-N Transistors Rugged Devices for Intermediate, Power Applications

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N3054

Abstract: 2n3773 power Amplifier 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . P t to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . A A i 9U X 9U le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

RCA 40313

Abstract: 40328 RCA411 40318 RCA 2N5415 2N6177 RCA 40373 2N3439 2N3440 40322
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

40322

Abstract: 40374 40373 40328 2N6263 2N3439 2N3441 2N6264 40318 TO-66
Contextual Info: fy = 15 MHz m in ;P j = 10 W max 2N3439 FAMILY [n-p-n] silicon [cont'd] DESCRIPTION V C E O '*usi h FE i/ i_ i «/ •C E R '1" * 1 * C E V » " * ' V V V 350 - - i •c w *C E A V •CEV- " nA r1_« _ V/ m p— . - Or* W V C E (sat) - V 1 1 ■c ■B ’ CE

2NXXXX

Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
Contextual Info: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2SD1039

Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220

2N1482

Abstract: 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 BDY37 2n3055 complement
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . . A A i 9U X 9U le a 1 .S A m ax. lc » 3 .S A m ax. P y « 10 W m ax. TO-391* P T - 8 .7 S W m u . (TO-391* 90 x 9 0

NPN Transistor 2N3055

Abstract: 2n1488 2N344 2N3055 2N5415 2N2102 2N5296 RCA RCA 410 2N3439 2N3440
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

2n3773 power Amplifier

Abstract: 2N3055 hfe 2n3055 2n3055 complement 2N1482 2N3054 2N344 2N5298 2N5786 2N6478
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: 2N6474 npn 40872 npn darlington 400v 15a transistor BDY29 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . . A A i 9U X 9U le a 1 .S A m ax. lc » 3 .S A m ax. P y « 10 W m ax. TO-391* P T - 8 .7 S W m u . (TO-391* 90 x 9 0

RCA 528

Abstract: 2n3055 complement rca 2n3771 40349 transistor RCA 528 Transistor PJ 257 2n5578 RCA 2N3055 transistor 2n3772 complement 2N3055 RCA
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.

2N5296 RCA

Abstract: RCA 40373 amplifier ocl 2n3055 2N3055 RCA 40347 2N5415 2N3442 2N6262 40328 2N1482
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.

rca 40411

Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

SILICON TRANSISTOR CORP

Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
Contextual Info: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O