2SB929A Search Results

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 emitter voltage 2SB929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature Tj Storage temperature

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB0929, 2SB0929A 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 –60 emitter voltage 2SB0929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature

Contextual Info: Power Transistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD 1252, 2SD1252A Unit : mm 8.7 • Features • High DC current gain hre and good linearity • Low collector-emitter saturation voltage (V c el . u)

Contextual Info: Power Transistors 2SD1252, 2SD1252A 2SD1252, 2SD1252A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB929, 2SB929A • Features • H igh D C c u r re n t gain Iiff U n it : 3.7max. 8.7 n t— <1 l.l,max

Contextual Info: Product specification 2SB929A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE sat .

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0929 2SB929 and 2SB0929A (2SB929A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: Power T ransistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1252, 2SD1252A • Features . • High DC current gain lire and good linearity ' • Low collector-emitter saturation voltage ( V Cec« .o )

2SB929A

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB929A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: 2SD1252, 2SD1252A Power Transistors 2S D 1252, 2S D 1252A Silicon N P N T rip le -D iffu s e d P la n a r Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB929, 2SB929A U n it ! mn 3.7max, • Features 8.7 n • H igh DC c u rre n t gain

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB0929 2SB929 , 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0929A −60 V Collector-emitter voltage 2SB0929 (Base open) 2SB0929A

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB929 and 2SB929A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 6 V Peak collector current ICP

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SB927

Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
Contextual Info: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691