2SD1252 Search Results

2SD1252

Abstract: 2SD1252A
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Junction Type 2SD1252,2SD1252A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit

Contextual Info: Power Transistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD 1252, 2SD1252A Unit : mm 8.7 • Features • High DC current gain hre and good linearity • Low collector-emitter saturation voltage (V c el . u)

Contextual Info: Power Transistors 2SD1252, 2SD1252A 2SD1252, 2SD1252A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB929, 2SB929A • Features • H igh D C c u r re n t gain Iiff U n it : 3.7max. 8.7 n t— <1 l.l,max

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0929 2SB929 and 2SB0929A (2SB929A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage

Contextual Info: Transistors SMD Type Product specification 2SD1252,2SD1252A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

Contextual Info: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0929, 2SB0929A Unit: mm 1.0±0.1 Parameter Collector-base voltage Emitter open 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: Power T ransistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1252, 2SD1252A • Features . • High DC current gain lire and good linearity ' • Low collector-emitter saturation voltage ( V Cec« .o )

2SB0929

Abstract: 2SB0929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0929, 2SB0929A Unit: mm 3.0+0.4 –0.2 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 8.5 (6.0) 1.3 3 Parameter

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: 2SD1252, 2SD1252A Power Transistors 2S D 1252, 2S D 1252A Silicon N P N T rip le -D iffu s e d P la n a r Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB929, 2SB929A U n it ! mn 3.7max, • Features 8.7 n • H igh DC c u rre n t gain

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB0929 2SB929 , 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0929A −60 V Collector-emitter voltage 2SB0929 (Base open) 2SB0929A

2SB0929

Abstract: 2SB0929A 2SD1252 2SD1252A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0929, 2SB0929A Unit: mm 6.0±0.2 1.0±0.1 10.0±0.3 1.5±0.1 2 3.0+0.4 –0.2

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB929 and 2SB929A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 6 V Peak collector current ICP

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

2SB929

Abstract: 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 emitter voltage 2SB929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature Tj Storage temperature

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: Power Transistors 2SB0929, 2SB0929A 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 –60 emitter voltage 2SB0929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SD1039

Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200