2SB937 Search Results

2SB937

Abstract: 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A Unit: mm VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A dissipation Ta=25°C

2SB0937

Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SB0937 2SB937 , 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −2 A Peak collector current

2SB937

Abstract: 2SB937A 2SD12 2SD1260 2SD1260A SAL package panasonic 2SB
Contextual Info: Power Transistors 2 S D 1 2 6 0 , 2SD1260, 2SD12Ó0A 2 S D 1 2 6 0 A Package D im ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max l.lmax. 8.7 max. 6.5max. I* »I Power A m plifier C om plem enta ry Pair with 2SB937, 2SB 937A _n

2SB0937

Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm 1.0±0.1 2SB0937 Symbol Rating Unit VCBO −60 V −80 2SB0937A −60 Collector-emitter voltage 2SB0937

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Rating Unit VCBO −60 V −80 2SB0937A Collector-emitter voltage 2SB0937 (Base open)

TRANSISTOR 10003

Abstract: 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SB0937, 2SB0937A 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB0937A 10.0±0.3 Unit: mm –60 V –80 Emitter to base voltage

2SB937

Abstract: 2SB937A 2SD1260 2SD1260A DSA003716
Contextual Info: Power Transistors 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB937A –60 VCEO –80 10.0±0.3 Unit: mm V Emitter to base voltage VEBO –5

Contextual Info: Power Transistors 2SD1260, 2SD1260A 2SD1260, 2SD1260A Package Dimensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type • High DC current gain 3.7 max 8.7 max. Power Amplifier Complementary Pair with 2SB937, 2SB937A • Features U m ax. 6.5 max.

2SB937

Abstract: 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SB937, 2SB937A 2SB937, 2 S B 9 3 7 A Package Dim ensions Unit : mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. Pow er Am plifier, Switching C om plem entary Pair with 2 S D 1 2 6 0 , 2 S D 1 2 6 0 A I* l.lm ax. 6.5 max.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 VCEO Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 VCEO Emitter-base voltage (Collector open)

Contextual Info: Power Transistors 2SB937, 2SB937A 2SB937, 2SB937A P ackage Dim ensions U nit : mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. P ow er Am plifier, Switching C o m plem entary Pair with 2 S D 1 2 6 0 , 2 S D 1 2 6 0 A I* l.lm ax. 6.5 max.

2SB0937

Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
Contextual Info: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB0937 2SB937 and 2SB0937A (2SB937A) VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SA1302 TOSHIBA

Abstract: 2SA1302 Toshiba 2Sa1302 SB 1156 2sb817 2SB863 2SB1371 mitsubishi 1183 2SB1407 2SB1201
Contextual Info: - 64 - S € Type No. tt « Manuf. H # SANYO M S TOSHIBA S NEC S ÏZ HITACHI 8 ± Ü FUJITSU fé T MATSUSHITA 2SB 1 1 4 « fé T 2SB 1149— ' « 2S6 1151 , B « 2SB1165 2SB 1152 «5 T 2SB817 2SB 1153 fé T 2SB 1155" fâ T 2SB 1156 - fé T 2SB 1157 fé T 2SB776

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200