2SD12 Search Results

2SD1294

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain

2SD1221

Contextual Info: TOSHIBA TRANSISTOR 2SD1221 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : vCE(sat)=0.4V(Typ.) (Ic=3A, Ir =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat =0.4V(Typ.) (Ic=3A, Ib =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C) . Complementary to 2SB906 MAXIMUM RATINGS (Ta=25°C)

B941

Abstract: B 941 2SD1224
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1224 PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8MAX. FEATURES : 1 . High DC Current Gain : hpE=¿*000(Min.) (Vc e =2V, Ic=150mA) . Low Saturation Voltage

2SD1249

Abstract: 2SD1249A
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1249, 2SD1249A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1

2SD1254

Contextual Info: Transistors SMD Type Silicon NPN epitaxial planar type 2SD1254 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

2SB942

Abstract: 2SB942A 1267A
Contextual Info: Inchange Semiconductor Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A

2SB940

Abstract: 2SB940A
Contextual Info: JMnic Product Specification 2SB940,2SB940A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1264/1264A ・High collector to emitter voltage VCEO ・Large collector power dissipation PC APPLICATIONS ・For power amplification

2SB941

Abstract: 2SB941 P 2sb941a 2SB941 Q 1266a
Contextual Info: JMnic Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION

2SB944

Abstract: 2SD1269
Contextual Info: JMnic Product Specification 2SB944 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1269 APPLICATIONS ・For power switching applications PINNING PIN

2SB950A

Abstract: 2SB950 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB950, 2SB950À Package Dimensions 2 SB9 5 0 , 2 SB9 5 0 A U nit * mm Silicon PNP Epitaxial Planar Darlington Type 4 4max. 10.2tnax, 5.7ma*. 2.9max. Power Amplifier, Switching Complementary Pair with 2SD1276, 2SD1276A •Features • High DC current gain

2SB892

Contextual Info: 2SB892 / 2SD1207 Ordering number : EN930D SANYO Semiconductors DATA SHEET 2SB892 / 2SD1207 PNP / NPN Epitaxial Planar Silicon Transistors Large-Current Switching Applications Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

2SB906

Abstract: 2SD1221
Contextual Info: TO SH IB A 2SD1221 T O S H IB A T RA N SIST O R SILICON NPN TRIPLE D IFFUSED T Y PE PCT PRO CESS 2 S D 1 221 A U D IO FR EQ U EN C Y P O W E R A M P L IF IE R A PPLIC A TIO N • U n it in mm Low Collector S aturation V oltage : V CE (sat) = °-4 v (TyP-)

2SD1225M

Abstract: 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9
Contextual Info: 2SD1225M/2SD1858 £ / J ransistors h 7 > v ROHM CO LTD 4 2S D 1225M 2S D 1858 T> m É S a 3 S a • R H v ' J a > h 7 > v X N ^ 4 , ^JiMlîlffl/M edium Power Amp. 7^27-2 ] Epitaxial Planar NPN Silicon Transistors VhMVlV’J i-r • WM■^■^0/Dimensions Unit : mm

P13W

Abstract: 2SB930 2SB930A 2SD1253 2SD1253A
Contextual Info: Pow er Tra n sisto rs 2SD1253, 2SD1253A 2SD1253, 2SD1253A Silicon N PN Trip le -D iffu se d Planar Type P ackage D im ension s P ow e r A m plifier C o m p le m e n ta ry Pair with 2SB 930, 2SB 93 0A U nit ! mm • Fe a tu res 8.7 • H igh DC c u r re n t gain <hFE and go o d lin earity

2SD1270

Abstract: npn 2a 2SB945
Contextual Info: Inchange Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Large collector current IC ・Complement to type 2SB945 APPLICATIONS ・For power switching applications

2SB940

Abstract: 2SB940A 1264a
Contextual Info: Inchange Semiconductor Product Specification 2SB940,2SB940A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1264/1264A ・High collector to emitter voltage VCEO ・Large collector power dissipation PC APPLICATIONS

transistor 12v 1A NPN

Abstract: 2SB941 2SD1266
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1266 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 1.2V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB941

2SB946

Abstract: 2SD1271
Contextual Info: Inchange Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1271 ・Low saturation voltage ・Good linearity of hFE ・High current APPLICATIONS ・For power switching applications

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB906 Unit in inm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 68MAX. FEATURES : . Low Collector Saturation Voltage : V C E sat =-1.0V(Typ.) (Ic— 3A, IB =-0.3A) 5.2±0.2 j . High Power Dissipation : Pç=20W (Tc-25°C) . Complementary to 2SD1221

2SD1252

Abstract: 2SD1252A
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Junction Type 2SD1252,2SD1252A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25

2SD1253

Abstract: 2SD1253A
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1253,2SD1253A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1

2SB931

Abstract: 2SD1254
Contextual Info: Power Transistors 2SB931 2SB931 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1254 • Features Unit I mm 8.7 ; • Low collector-emitter saturation voltage VcEisa« • Good linearity of DC current gain

2SB932

Abstract: 2SD1255
Contextual Info: Power Transistors 2SD1255 2SD1255 Silicon NPN Epitaxial Planar Type • Package D im ensions Power S w itching C om plem entary Pair w ith 2SB932 ■ Features • Low collector-emitter saturation voltage V cf mj • Good linearity of DC current gain (hn.)