2SD1276A Search Results

2SB950A

Abstract: 2SB950 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB950, 2SB950À Package Dimensions 2 SB9 5 0 , 2 SB9 5 0 A U nit * mm Silicon PNP Epitaxial Planar Darlington Type 4 4max. 10.2tnax, 5.7ma*. 2.9max. Power Amplifier, Switching Complementary Pair with 2SD1276, 2SD1276A •Features • High DC current gain

2SD1276

Abstract: G01BB 2SB950 2SB950A 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A 2SD1276, 2SD1276A Package Dim ensions Unit mm j 4.4max. I S ilico n N P N Triple-D iffused P la n a r Darlington Type b-+\ 2.9md\ Power A m plifier C om plem entary Pair with 2SB950, 2SB950A • Features 0 3 1 1 0 .1 •

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

2SB0950

Abstract: 2SB0950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 2.7±0.2 Rating Unit VCBO 60 V 2SD1276A 2.54±0.3 VCEO Emitter-base voltage Collector open VEBO 5 V IC 4 A Peak collector current TC = 25°C

C-123

Abstract: 2SB950 2SB950A 2SD127 2SD1276 2SD1276A IPL 3000
Contextual Info: Power Transistors 2SD1276, 2SD1276A 2S D 1 27 6, 2S D 1276A P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifier C o m p le m e n ta ry P a ir with 2 S B 9 5 0 , 2 S B 9 5 0 A • F e a tu re s • H ig h D C c u r r e n t g a in h pc

2SD1276

Abstract: 2SD1276A 2SB950 2SB950A
Contextual Info: Product Specification www.jmnic.com 2SD1276 2SD1276A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB950 and 2SB950A ・High forward current transfer ratio hFE ・High-speed switching APPLICATIONS ・For power amplification

2SB0950

Abstract: 2SB0950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 16.7±0.3 4.2±0.2 • High forward current transfer ratio hFE • High-speed switching

Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 16.7±0.3 4.2±0.2 φ 3.1±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington Unit: mm • Absolute Maximum Ratings Parameter Symbol Collector to 2SD1276 base voltage 2SD1276A Collector to 2SD1276 emitter voltage 2SD1276A Ratings Unit 60 VCBO V 80

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB0950 2SB950 , 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 16.7±0.3 4.2±0.2 φ 3.1±0.1 M Di ain sc te on na

2SD650

Abstract: 2SC4711 MG30G1BL3 2SD670 hitachi 2SD731 2SD670 2SD837B 2SD678 2sd699 2SD683
Contextual Info: - 22 0 - tt M € Type No. « Manuf. SANYO 2SD 677 K 2 TOSHIBA m NEC HITACHI ll * ± a FUJITSU tö T MATSUSHITA MITSUBISHI □ — A ROHM 2SD2132 2SC2139 2SD 678A fö T 2SC3144 2SD635 2SD560 2SD1275A 2SD1932 2SD 679A tö T 2SD1190 2SD634 2SD560 2SD1276A 2SD1932

2SD1276A

Abstract: 2SD1276
Contextual Info: Inchange Semiconductor Product Specification 2SD1276 2SD1276A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB950/950A ・High DC current gain ・High-speed switching APPLICATIONS ・For power amplification PINNING

2SD1276

Abstract: 2SB950A 2SD1276A 2SB950
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington Unit: mm • Absolute Maximum Ratings Parameter Symbol Collector to 2SD1276 base voltage 2SD1276A Collector to 2SD1276 emitter voltage 2SD1276A Ratings 60 VCBO V 80 VEBO

Contextual Info: Power Transistors 2SB0950 2SB950 , 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 16.7±0.3 4.2±0.2 φ 3.1±0.1 Collector-base voltage

transistor 2sb950a

Abstract: 2SB950A 2SD1276A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 2000 Min. @IC= -3A ·High Speed Switching ·Complement to Type 2SD1276A APPLICATIONS ·Designed for power amplifier and switching applications.

2SD1276

Abstract: 2SD1276A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1276 2SD1276A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB950/950A ·High DC current gain ·High-speed switching APPLICATIONS ·For power amplification PINNING PIN

darlington power pack

Abstract: ft 103 DARLINGTON Vbe 8 V 2SB0950 2SB0950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 4.2±0.2 2.7±0.2 16.7±0.3 φ 3.1±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

MJE1100

Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO (V) W Darlington Transistors, NPN (Cont'd) . . . .5 . . . .10 . . . .15 . . . .20 . . . .25 . . . .30 . . . .35 . . . . 40 . . . .45 . . . .50 . . . .55 . . . . 60 . . .65 . . . .70

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SB0950

Abstract: 2SB0950A 2SB950 2SB950A 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB0950 2SB950 , 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit: mm Collector-base voltage (Emitter open) Symbol 2SB0950 Rating Unit −60 VCBO V 16.7±0.3 14.0±0.5 • Absolute Maximum Ratings TC = 25°C 4.2±0.2

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455