2SD1520 Search Results

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207

Contextual Info: 2SD1520 L /(S) Silicon NPN Epitaxial HITACHI Application Medium speed power amplifier Outline DPAK 2SD1520(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage ^C B O 100 V Collector to em itter voltage VcEO 80 V Emitter to base voltage

Hitachi DSA00164

Contextual Info: 2SD1520 L /(S) Silicon NPN Epitaxial Application Medium speed power amplifier Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector ID 2.7 kΩ 0.6 kΩ (Typ) (Typ) 3 2SD1520(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SD1520 L /(S) Silicon NPN Epitaxial HITACHI Application Medium speed power amplifier Outline 2SD1520(L)/(S) Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit C o lle cto r to base vo lta g e ^G B O 100 V C o lle cto r to e m itte r vo lta g e

2SD1520

Abstract: 2SD1520S
Contextual Info: HITACHI 2SD1520 L, 2SD1520S SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER I J L1-. i^Type Type I. lîa-w 1 . Col lector 3 Em iitcr •1 C oilcclor D im e n s io n s in m m (DPAK) M AXIM UM CO LLECTO R DISSIPATION CURVE AB S O LU T E M AXIM UM RATINGS (Ta=25cC)

Contextual Info: 2SB1072 L , 2SB1072(S) Silicon PNP Triple Diffused HITACHI Application Medium speed power amplifier complementary pair with 2SD1520(L)/(S) Outline 2SB1072(L), 2SB1072(S) Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage

Hitachi DSA001650

Contextual Info: 2SB1072 L , 2SB1072(S) Silicon PNP Triple Diffused Application Medium speed power amplifier complementary pair with 2SD1520(L)/(S) Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector ID 3 kΩ (Typ) 0.4 kΩ (Typ)

Contextual Info: 2SB1072 L , 2SB1072(S) Silicon PNP Triple Diffused HITACHI Application Medium speed power amplifier complementary pair with 2SD1520(L)/(S) Outline 2SB1072(L), 2SB1072(S) Absolute Maximum Ratings (Ta = 25°C) Item Sym bol Rating Unit Collector to base voltage

Contextual Info: È HITACHI 2 S B 1 7 2 L , 2 S B 1 7 2 S SILICON PNP TRIPLE DIFFUSED MEDIUM S P iiE O ^ “ COMPLEMENTARY PAIR WITH 2SD1520 /© Rn <S>Type Î.4 I »3«* 2 . C o ita 'lo c V ÜmtiK-r 4 Coiteci«* iOimeaA.ioni. in mm DPAK) • ABSO LUTE MAXIMUM RATINGS (Ta=25'‘0

2SB1072

Abstract: 2SD1520 Hitachi DSA00108
Contextual Info: 2SB1072 L , 2SB1072(S) Silicon PNP Triple Diffused Application Medium speed power amplifier complementary pair with 2SD1520(L)/(S) Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type This Material Copyrighted By Its Respective Manufacturer 1. Base 2. Collector

Contextual Info: 2SD1520 L /(S) Silicon NPN Epitaxial HITACHI Application Medium speed power amplifier Outline 2SD1520(L)/(S) Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Rating Unit Collector to base voltage ^GBG 100 V Collector to em itter voltage VCE0 80 V Emitter to base voltage

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

2SD1570

Abstract: 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323
Contextual Info: - 234 - m % Type No. tt 2 SD 1 2 1 2 * - H 2 SD 1 213 ^ = 2 SD 1 2 1 4 ^ fé fé fé fé 2 SD 1215 2 SD 1216 2 SD 1 217 ~« n 1 91 «- * 2 SD 1 21 9 ^ 2 SD 1 22 0 n T m T 2SD1393 T 7SD139S fé T - m *£ j£ 2 SD 1 22 3 y m ^ M 2 SD 1 22 5 / □ - A 2 SD 1 2 26

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.